Rapid synthesis of nc-Si/a-SiNx:H QD thin films by plasma processing for their cost effective applications in photonic and photovoltaic devices

RSC Advances ◽  
2015 ◽  
Vol 5 (78) ◽  
pp. 63572-63579 ◽  
Author(s):  
Debajyoti Das ◽  
Basudeb Sain
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Plasma Processing ◽  
Cost Effective ◽  
Single Step ◽  
High Density ◽  
Gas Mixture ◽  
Photovoltaic Devices ◽  
Rapid Synthesis ◽  
Inductively Coupled

A rapid and single step synthesis of nc-Si/a-SiNx:H QD thin films has been made possible from a (SiH4 + NH3) gas mixture, with the advent of high density low pressure planar inductively coupled plasma processing.

Zirconia Coatings Deposited by Inductively Coupled Plasma Assisted CVD

1998 ◽  
Vol 555 ◽  
Author(s):  
P. Colpo ◽  
G. Ceccone ◽  
B. Leclercq ◽  
P. Salvatore ◽  
F. Rossi
Keyword(s):  
Thin Films ◽  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Gas Mixture ◽  
Negative Bias ◽  
Negative Bias Voltage ◽  
Inductively Coupled ◽  
Deposition Parameters ◽  
Coating Characteristics ◽  
Dc Bias

AbstractThin films of zirconia have been deposited by an Inductively Coupled Plasma Assisted CVD (ICP-PACVD) reactor from tetra (tert-butoxy)-zircon precursor diluted in Ar and O2 gas mixture. An independent RF generator is used to control carefully the substrate negative bias voltage during the deposition. Zirconia thin films, with thickness up to 10 microns were deposited on Si (100) polished wafers under different plasma conditions. Correlation between deposition parameters, and microstructure has been established showing that the ion bombardment has a large influence on the coating characteristics. In particular, the possibility of tailoring mechanical properties of the films by controlling the applied DC bias voltage is discussed.

Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films in a CH3COOH/Ar gas mixture

Vacuum ◽  
2015 ◽  
Vol 119 ◽  
pp. 151-158 ◽  
Author(s):  
Adrian Adalberto Garay ◽  
Su Min Hwang ◽  
Ji Hyun Choi ◽  
Byoung Chul Min ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Magnetic Thin Films ◽  
Gas Mixture ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Ar Gas

Etching mechanism of (Pb,Sr)TiO3 thin films for DRAM application using Cl2/Ar inductively coupled plasma

Vacuum ◽  
2004 ◽  
Vol 74 (3-4) ◽  
pp. 485-489 ◽  
Author(s):  
Gwan-Ha Kim ◽  
Kyoung-Tae Kim ◽  
Dong-Pyo Kim ◽  
Chang-Il Kim
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled ◽  
Etching Mechanism

Effect of silane/hydrogen ratio on microcrystalline silicon thin films by remote inductively coupled plasma

2013 ◽  
Vol 113 (20) ◽  
pp. 203505 ◽  
Author(s):  
Y. N. Guo ◽  
D. Y. Wei ◽  
S. Q. Xiao ◽  
S. Y. Huang ◽  
H. P. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Microcrystalline Silicon ◽  
Inductively Coupled ◽  
Silicon Thin Films

Etching mechanisms of (Ba,Sr)TiO3 thin films in CF4/Ar inductively coupled plasma

2004 ◽  
Vol 71 (1) ◽  
pp. 54-62 ◽  
Author(s):  
A.M Efremov ◽  
Dong-Pyo Kim ◽  
Kyoung-Tae Kim ◽  
Chang-Il Kim
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled
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