scholarly journals Electrical and Optical Characteristics of SSI-LED Made from Capacitor Containing Tri-Layer WOx Embedded Zr-Doped HfOx Gate Dielectric

2021 ◽  
Author(s):  
Wen-Shan Lin ◽  
Yue Kuo
Keyword(s):  
Dielectric Layer ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Optical Characteristics ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Warm White Light ◽  
The Difference

Abstract Solid-state incandescent light emitting devices made from MOS capacitors with the WOx embedded Zr-doped HfOx gate dielectric were characterized for electrical and optical characteristics. Devices made from capacitors containing Zr-doped HfOx and WOx, gate dielectrics were also fabricated for comparison. The device with the WOx embedded gate dielectric layer had electrical and light emitting characteristics between that with WOx gate dielectric layer and that with the Zr-doped HfOx but no WOx embedded gate dielectric layer. The difference can be explained by the nano-resistor formation process and the content of the high emissivity W in the nano-resistor. The device made from the WOx embedded Zr-doped HfOx gate dielectric MOS capacitor is applicable to areas where uniform emission of warm white light is required.

Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor

2014 ◽  
Vol 778-780 ◽  
pp. 549-552 ◽  
Author(s):  
Jing Hua Xia ◽  
David M. Martin ◽  
Sethu Saveda Suvanam ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Deposition Process ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Layer Deposition ◽  
High K ◽  
Film Characteristics

LaxHfyO nanolaminated thin film deposited using atomic layer deposition process has been studied as a high-K gate dielectric in 4H-SiC MOS capacitors. The electrical and nano-laminated film characteristics were studied with increasing post deposition annealing (PDA) in N2O ambient. The result shows that high quality LaxHfyO nano-laminated thin films with good interface and bulk qualities are fabricated using high PDA temperature.

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3

2018 ◽  
Vol 924 ◽  
pp. 490-493 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
3 Dimensional ◽  
Layer Deposition ◽  
Show Evidence ◽  
Flatband Voltage

3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (1120) plane in the sidewall.

Ultrastable Lead-Free Double Perovskite Warm-White Light-Emitting Devices with a Lifetime above 1000 Hours

2020 ◽  
Vol 12 (41) ◽  
pp. 46330-46339
Author(s):  
Sen Li ◽  
Zhifeng Shi ◽  
Fei Zhang ◽  
Lintao Wang ◽  
Zhuangzhuang Ma ◽  
...  
Keyword(s):  
White Light ◽  
Double Perovskite ◽  
Lead Free ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Warm White Light

Structure, morphology and optical characterization of Dy 3+ -doped BaYF 5 nanocrystals for warm white light emitting devices

2017 ◽  
Vol 70 ◽  
pp. 16-24 ◽  
Author(s):  
P. Haritha ◽  
I.R. Martín ◽  
C.S. Dwaraka Viswanath ◽  
N. Vijaya ◽  
K. Venkata Krishnaiah ◽  
...  
Keyword(s):  
White Light ◽  
Optical Characterization ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Warm White Light ◽  
Structure Morphology

Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells

2003 ◽  
Vol 798 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoshinobu Kawaguchi ◽  
Shigeo Fujita
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Transition Probability ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Semiconductor Quantum Wells ◽  
Emission Lifetime ◽  
Quantum Disks ◽  
The Difference ◽  
Optical Transition Probability

ABSTRACTThe dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated. For 1-nm-thick QDs, it is found that the lifetime in the conventional c-oriented QDs is ten times as long as that in QDs tilted by 30° and 90°, and that the difference is pronounced by increasing the QDs thickness. This is totally due to the presence of the electric field in strained InGaN. Taking into account our preceding study, in which it was revealed that GaN on GaAs(114) was titled by 30°, we propose the use of GaAs(114) as a substrate for nitride light emitting devices to improve the optical transition probability.

Numerical Simulation of Electrical and Optical Characteristics of Multilayer Organic Light-Emitting Devices

2004 ◽  
Vol 43 (11A) ◽  
pp. 7560-7565 ◽  
Author(s):  
Chih-Chien Lee ◽  
Mei-Ying Chang ◽  
Yeung-Dong Jong ◽  
Tain-Wang Huang ◽  
Chrong-Shyua Chu ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Optical Characteristics ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices

Study on the Optical Transmission Properties of One-Dimensional Photonic Crystal of MoS2

2014 ◽  
Vol 1056 ◽  
pp. 42-46 ◽  
Author(s):  
Kai Wu ◽  
Wei Xia Gu ◽  
Chen Wu ◽  
Jin Lou Ma ◽  
Xi Ying Ma
Keyword(s):  
Photonic Crystal ◽  
Dielectric Layer ◽  
Optical Transmission ◽  
Band Gaps ◽  
Light Emitting ◽  
One Dimensional ◽  
Light Emitting Devices ◽  
Light Transfer ◽  
Transfer Properties ◽  
Photonic Band

We designed MoS2/SiO2one-dimensional (1D) photonic crystal using the concept of photonic crystal and investigated the light transfer properties by means of transfer-matrix method. We found that the transfer properties of photonic crystal can be modified by the period of photonic crystal, the thickness of dielectric layer, and the number of the defect layers. The number of photonic band gaps (PBGs) reduces with the decrease of the thickness of dielectric layer, and the position of PBGs in the spectra rapidly moves to short wavelength direction. For defect photonic crystal, the width of the PBGs obviously become larger, and the transmittance spectra oscillate more intensely, similar to the characteristics of Bragg gratings. These properties will give good instructor for the preparation of 1D MoS2quantum well light emitting devices and solar cells.

Fabrication and Characterization of Directly-Assembled ZnO Nanowire Field Effect Transistors with Polymer Gate Dielectrics

2007 ◽  
Vol 7 (11) ◽  
pp. 4101-4105
Author(s):  
Ahnsook Yoon ◽  
Woong-Ki Hong ◽  
Takhee Lee
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Electrical Characteristics ◽  
Zno Nanowire ◽  
Device Structure

We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.

Limiting Native Oxide Regrowth for High-k Gate Dielectrics

2003 ◽  
Vol 765 ◽  
Author(s):  
K. Choi ◽  
H. Harris ◽  
S. Gangopadhyay ◽  
H. Temkin
Keyword(s):  
Silicon Oxide ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Oxide Thickness ◽  
Hafnium Dioxide ◽  
Electron Beam Evaporation ◽  
Native Oxide ◽  
Device Applications ◽  
The Difference ◽  
Cleaning Methods

AbstractA cleaning process resulting in atomically smooth, hydrogen-terminated, silicon surface that would inhibit formation of native silicon oxide is needed for high-k gate dielectric deposition. Various cleaning methods thus need to be tested in terms of resistance to native oxide formation. Native oxide re-growth is studied as a function of exposure time to atmospheric ambient using ellipsometry. Hafnium dioxide film (k ~23) is deposited on the as-cleaned substrates by electron beam evaporation and subsequently annealed in hydrogen. The difference in the effective oxide thickness re-grown on surfaces treated with the conventional RCA and modified Shiraki cleaning methods, after one-hour exposure, can be as large as 2 Å. This is significant in device applications demanding equivalent oxide thickness less than 20 Å. The degree of hydrogen passivation, surface micro-roughness and organic removal capability are considered to be the main factors that explain the differences between the cleaning methods. Data derived from capacitance-voltage analysis of test capacitors verified the trend observed in the native oxide thickness measurements. An increase of 10~15 % in accumulation capacitance is observed in the samples treated by the new cleaning method.

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