CVD Growth of Group-III Nitride Semiconductors: An ab Initio Based Multiscale Study

2006 ◽  
Keyword(s):  
Ab Initio ◽  
Nitride Semiconductors ◽  
Group Iii ◽  
Cvd Growth ◽  
Group Iii Nitride

Spatio-time-resolved cathodoluminescence studies of wide-bandgap group-III nitride semiconductors

2020 ◽  
Vol 59 (2) ◽  
pp. 020501
Author(s):  
Shigefusa F. Chichibu ◽  
Yoichi Ishikawa ◽  
Kouji Hazu ◽  
Kentaro Furusawa
Keyword(s):  
Wide Bandgap ◽  
Nitride Semiconductors ◽  
Time Resolved ◽  
Group Iii ◽  
Group Iii Nitride

Renaissance and Progress in Nitride Semiconductors - My Personal History of Nitride Research -

2000 ◽  
Vol 639 ◽  
Author(s):  
Isamu Akasaki
Keyword(s):  
High Speed ◽  
High Performance ◽  
Green Light ◽  
Blue Laser ◽  
Personal History ◽  
Nitride Semiconductors ◽  
Quarter Century ◽  
Group Iii ◽  
History Of ◽  
Group Iii Nitride

ABSTRACTWide bandgap group-III nitride semiconductors are currently experiencing the most exciting development. High brightness blue and green light emitting diodes (LEDs) are commercialized, and UV and blue laser diodes (LDs), high-speed transistors (TRs) and UV photodetectors (PDs) with low dark current, which will be able to operate in harsh environments, have been demonstrated. In this paper, renaissance and progress in crystal growth and conductivity control of nitride semiconductors in the last quarter century are reviewed as the groundwork for all of those high-performance devices. My personal history of nitride research will be also introduced.

Direct immobilization and hybridization of DNA on group III nitride semiconductors

2009 ◽  
Vol 255 (11) ◽  
pp. 5905-5909 ◽  
Author(s):  
Xiaobin Xu ◽  
Vibhu Jindal ◽  
Fatemeh Shahedipour-Sandvik ◽  
Magnus Bergkvist ◽  
Nathaniel C. Cady
Keyword(s):  
Nitride Semiconductors ◽  
Group Iii ◽  
Group Iii Nitride ◽  
Direct Immobilization

scholarly journals Group III – Nitride Semiconductors: Preeminent Materials for Modern Electronic and Optoelectronic Applications

2015 ◽  
Vol 5 ◽  
pp. 22-26 ◽  
Author(s):  
Ananta R. Acharya
Keyword(s):  
Physical Properties ◽  
Nitride Semiconductors ◽  
Fabrication Technology ◽  
Semiconducting Materials ◽  
Group Iii ◽  
Commercial Use ◽  
The Past ◽  
Group Iii Nitride ◽  
Almost All ◽  
Fundamental Physical

Over the past two decades, group III-nitride semiconductors have become the focus of extremely intensive research due to their unique physical properties and their high potential for use in numerous electronic and optoelectronic devices. To date, almost all aspects of these materials have been explored, from understanding the fundamental physical properties to the development of fabrication technology of highly efficient devices for commercial use. In this article, some of the important physical properties and applications of III-nitride semiconducting materials have been presented.The Himalayan Physics Year 5, Vol. 5, Kartik 2071 (Nov 2014)Page: 22-26   

Characterization of Metal/A1xIn1-xN Interface Thermal Stability and Electrical Properties

1996 ◽  
Vol 449 ◽  
Author(s):  
Guohua Qiu ◽  
Fen Chen ◽  
J. O. Olowolafe ◽  
C. P. Swann ◽  
K. M. Unruh ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Specific Contact Resistance ◽  
Nitride Semiconductors ◽  
Group Iii ◽  
Line Measurement ◽  
Solid State Devices ◽  
Specific Contact ◽  
Group Iii Nitride ◽  
The Moment

ABSTRACTThe interfaces between metals and semiconductors are very crucial to the performance and reliability of solid-state devices. At the moment information on the interfaces between metals and group III-nitride semiconductors are very rare. In this study, linear I-V characteristics of titanium and aluminum to A1xIn1-xN of three different composition (x=0.18, 0.50,0.85) were obtained exhibiting ohmic characteristics. Specific contact resistance of these metals to A1.18In.82N and Al.5In.5N was measured by transmission line measurement. Interdiffusion between the metals and the semiconductors, induced by annealing in N2 ambient, was determined using RBS and thermal stability was evaluated.

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