Adjustment of Electrical Properties of Phosphorus Doped ZnO-Based Thin Film Transistor Deposited by DC Magnetron Sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6466-6471 ◽  
Author(s):  
Kittikhun Seawsakul ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Viyapol Pattantsetakul ◽  
Saksorn Limwichean ◽  
...  

2011 ◽  
Vol 40 (9) ◽  
pp. 1342-1345
Author(s):  
王震东 王震东 ◽  
赖珍荃 赖珍荃 ◽  
范定环 范定环 ◽  
徐鹏 徐鹏

2015 ◽  
Vol 1731 ◽  
Author(s):  
M. Baseer Haider ◽  
Mohammad F. Al-Kuhaili ◽  
S. M. A. Durrani ◽  
Venkatesh Singaravelu ◽  
Iman Roqan

ABSTRACTThin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase.


2009 ◽  
Vol 12 (12) ◽  
pp. 59-64
Author(s):  
Binh Van Ho ◽  
Hung Vu Tuan Le ◽  
Nhien Thi Ngoc Nguyen ◽  
Dat Thanh Huynh ◽  
Phuong Ai Duong ◽  
...  

The Ti-doped Zno films were deposited onto glass substrates from ceramic targets ZnO with various Ti concentrations using a DC magnetron sputtering. The experimental results show that all thin films are transparent and conductive oxide films, with the appropriate Ti concentration (⁓1.5% Ti), the conductance of films can be improved. Optical characteristics of thin films was determined by UV-V is spectroscopy. The thickness of thin films was measured by Stylus method. The electrical resistivity was measured by four-point probe, and the roughness of films was determined by AFM.


2015 ◽  
Vol 36 (2) ◽  
pp. 213-218
Author(s):  
莫淑芬 MO Shu-fen ◽  
刘玉荣 LIU Yu-rong ◽  
刘远 LIU Yuan

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