The X-Ray Spectrographic Analysis of Thin Films by the Milliprobe Technique

1961 ◽  
Vol 5 ◽  
pp. 512-515 ◽  
Author(s):  
Robert D. Sloan
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Probe ◽  
Spectrographic Analysis ◽  
X Ray ◽  
Electron Probe Microanalyzer ◽  
Bulk Production

AbstractFrequently it is desirable to perform an X-ray spectrographic analysis on an area of a specimen which is considerably smaller than that normally irradiated in bulk-production spectrographs. Ideally, one would turn to an electron-beam microanalyzer for this type of analysis. Unfortunately, there are few of us who can justify the expenditure necessary to equip our laboratories with this instrument. Therefore, a compromise measure has been arrived at which permits the analyst to examine an area many magnitudes smaller than that obtainable from production spectrographs and many magnitudes less expensive than that encountered in electron-probe microanalyzer instrumentation.

Measurement And Simulation Of X-Ray Emission From Multilayered Structures In Electron Probe Microanalysis.

1999 ◽  
Vol 5 (S2) ◽  
pp. 78-79
Author(s):  
C. Merlet ◽  
X. Llovet ◽  
F. Salvat
Keyword(s):  
Electron Probe ◽  
Numerical Models ◽  
Carbon Layer ◽  
Single Element ◽  
Surface Ionization ◽  
Copper Films ◽  
Multilayered Structures ◽  
X Ray ◽  
Electron Probe Microanalyzer ◽  
Quantitative Epma

Studies of x-ray emission from thin films on substrates using an electron probe microanalyzer (EPMA) provide useful information on the characteristics of x-ray generation by electron beams. In this study, EPMA measurements of multilayered samples were performed in order to test and improve analytical and numerical models used for quantitative EPMA. These models provide relatively accurate results for samples consisting of layers with similar average atomic numbers, because of their similar properties regarding electron transport and x-ray generation. On the contrary, these models find difficulties to describe the process when the various layers have very different atomic numbers. In a previous work, we studied the surface ionization of thin copper films of various thicknesses deposited on substrates with very different atomic numbers. In the present communication, the study is extended to the case of multilayered specimens.The studied specimens consisted of thin copper films deposited on a carbon layer which, in turn, was placed on a variety of single-element substrates, ranging from Be to Bi.

Electron Probe X-Ray Analysis of Nanofilms at Off-Normal Incidence of the Electron Beam

2018 ◽  
Vol 54 (14) ◽  
pp. 1417-1420
Author(s):  
S. A. Darznek ◽  
V. B. Mityukhlyaev ◽  
P. A. Todua ◽  
M. N. Filippov
Keyword(s):  
Electron Beam ◽  
Electron Probe ◽  
Normal Incidence ◽  
X Ray

REALIZATION AND CHARACTERIZATION OF e-BEAM COMPLETELY EVAPORATED BSCCO THIN FILMS

1991 ◽  
Vol 05 (18) ◽  
pp. 1203-1211 ◽  
Author(s):  
C. ATTANASIO ◽  
L. MARITATO ◽  
A. NIGRO ◽  
S. PRISHEPA ◽  
R. SCAFURO
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Single Crystal ◽  
Critical Current ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Reliable Technique ◽  
X Ray ◽  
Eds Analysis

BSCCO thin films with T c (R = 0) higher than 80 K have been routinely prepared using a simple and reliable technique in which we completely electron beam evaporated weighted amounts of bulk pellets. The films were grown on MgO single crystal (100) substrates and showed, after an ex-situ annealing at high temperatures (840–880° C) for several hours, a strong preferential orientation with the c-axis perpendicular to the plane of the substrate. The films were characterized by Θ − 2Θ X-ray diffraction and EDS analysis and by paraconductivity and critical current measurements.

STUDY OF SUPERCONDUCTING Y-BA-CU-O THIN FILMS WITH ZERO RESISTANCE TEMPERATURE AT 77K

1987 ◽  
Vol 01 (02) ◽  
pp. 571-574
Author(s):  
Jia-qi Zheng ◽  
Guo-guang Zheng ◽  
Dong-qi Li ◽  
Wei Wang ◽  
Jin-min Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electron Beam ◽  
High Vacuum ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance

Y-Ba-Cu-O thin films are deposited onto severval kinds of substrates by electron beam evaporating in a high vacuum system. After the heat treatment at 850–890°c for 1hr the Y-Ba-Cu-O films on the BaF2 substrates show superconducting behaviors with the midpoint Tc around 87K and zero resistance temperature at 77K. The composition and stucture analysis of these films have been studied by AES, XRFS and x-ray diffraction.

Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

1995 ◽  
Vol 10 (1) ◽  
pp. 26-33 ◽  
Author(s):  
L.M. Porter ◽  
R.F. Davis ◽  
J.S. Bow ◽  
M.J. Kim ◽  
R.W. Carpenter
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Electron Beam Evaporation ◽  
Leakage Currents ◽  
X Ray ◽  
Transmission Electron

Thin films (4–1000 Å) of Co were deposited onto n-type 6H-SiC(0001) wafers by UHV electron beam evaporation. The chemistry, microstructure, and electrical properties were determined using x-ray photoelectron spectroscopy, high resolution transmission electron microscopy, and I-V and C-V measurements, respectively. The as-deposited contacts exhibited excellent rectifying behavior with low ideality factors and leakage currents of n < 1.06 and 2.0 × 10−8 A/cm2 at −10 V, respectively. During annealing at 1000 °C for 2 min, significant reaction occurred resulting in the formation of CoSi and graphite. These annealed contacts exhibited ohmic-like character, which is believed to be due to defects created in the interface region.

TiNi/GaAs Thin Film Structures for Gate Metallizations

2000 ◽  
Vol 648 ◽  
Author(s):  
Chichang Zhang ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Sheet Resistance ◽  
Intermetallic Phase ◽  
Intermetallic Phases ◽  
Schottky Barriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Alloy Tini

AbstractShape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi was formed by annealing and complete intermixing of the multilayers at 370oC. The intermetallic phases were investigated with X-ray diffraction techniques. The annealing kinetics and resistivity investigations were carried out in order to minimize the sheet resistance of the intermetallic phase. TiNi Schottky barriers on GaAs have been fabricated and their performance will be reported. Additional investigations on surface morphology using the energy dispersive spectroscopy as well as TEM investigations show the correlation between microstructure, intermetallic phase formation and sheet resistance.

Emission Spectrographic Analysis of Tantalum Thin Films

1967 ◽  
Vol 21 (6) ◽  
pp. 364-367 ◽  
Author(s):  
J. D. Nohe
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Graphite Substrate ◽  
Resistance Heating ◽  
Spectrographic Analysis ◽  
Metallic Films ◽  
Similar Composition ◽  
Dc Arc

A dc-arc technique is described for the analysis of impurities in tantalum thin films. Films are sputtered directly on ultrapure graphite substrates, heat oxidized, and removed mechanically. Graphite is employed as the buffer, and samples are compared to standards of similar composition. The graphite-substrate technique has been applied to films of other metals produced by sputtering, resistance-heating evaporation, and electron-beam evaporation. Only portions of the spectrographic procedure are modified for different metallic films.

scholarly journals Characterization of Small Areas of Thin-Films by Grazing-Exit Electron Probe X-ray Microanalysis

2002 ◽  
Vol 43 (3) ◽  
pp. 414-416 ◽  
Author(s):  
Kouichi Tsuji ◽  
Zoya Spolnik ◽  
Kazuaki Wagatsuma ◽  
Kesami Saito ◽  
Katsuhiko Asami
Keyword(s):  
Thin Films ◽  
Electron Probe ◽  
X Ray ◽  
Small Areas
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