Nondestructive Characterization of Multilayer Thin Films by X-ray Reflectivity

1994 ◽  
Vol 38 ◽  
pp. 139-143
Author(s):  
T. C. Huang
Keyword(s):  
Thin Films ◽  
Layer Structure ◽  
Annealing Effect ◽  
Multilayer Thin Films ◽  
X Ray ◽  
Si Substrates ◽  
Specular Reflectivity ◽  
Reflectivity Data ◽  
Nondestructive Characterization

Abstract The X-ray reflectivity technique was used to study the annealing effect on layer structure of Ta/FeMn/NiFe/Cu/NiFe/Ta multilayer thin films on Si substrates. High-resolution specular reflectivity data were collected and analyzed by least-squares refinement. Results on layer thickness, density and roughness were obtained and correlated with the magnetic properties of the films.

Characterization of Single- and Multiple-Layer Films by X-Ray Reflectometry

1991 ◽  
Vol 35 (A) ◽  
pp. 137-142 ◽  
Author(s):  
T. C. Huang ◽  
W. Parrish
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
High Resolution ◽  
Single Layer ◽  
The Other ◽  
X Ray ◽  
Buried Interfaces ◽  
Multiple Layer ◽  
Reflectivity Data

AbstractPrecision X-ray reflectivity data were obtained with a high-resolution reflectometer equipped with a rotating anode X-ray source and Ge 220 channel monochromators (one placed before and the other after the specimen). The surfaces and buried interfaces of thin films were characterized by ieast-squares refinement of experimental data. Values of thickness, density, and/or roughness of Pt “single-layer” and Pt/Co based multiple-layer films were determined.

Microstructure Characterization of Si/C Multilayer Thin Films

2013 ◽  
Vol 743-744 ◽  
pp. 910-914
Author(s):  
Ting Han ◽  
Geng Rong Chang ◽  
Yun Jin Sun ◽  
Fei Ma ◽  
Ke Wei Xu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Post Annealing ◽  
Transmission Electron ◽  
Twin Defects ◽  
Modulation Ratio

Si/C multilayer thin films were prepared by magnetron sputtering and post-annealing in N2 atmosphere at 1100 for 1h. X-ray diffraction (XRD), Raman scattering and high-resolution transmission electron microscopy (HRTEM) were applied to study the microstructures of the thin films. For the case of Si/C modulation ratio smaller than 1,interlayer diffusion is evident, which promotes the formation of α-SiC during thermal annealing. If the modulation ratio is larger than 1, the Si sublayers are partially crystallized, and the thicker the Si sublayers are, the crystallinity increases. To be excited, brick-shaped nc-Si is directly observed by HRTEM. The brick-shaped nc-Si appears to be more regular near the Si (100) substrate but with twin defects. The results are instructive in the application of solar cells.

scholarly journals Diffusion Bonding of Ti6Al4V to Al2O3 Using Ni/Ti Reactive Multilayers

Metals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 655
Author(s):  
Marcionilo Silva ◽  
Ana S. Ramos ◽  
M. Teresa Vieira ◽  
Sónia Simões
Keyword(s):  
Thin Films ◽  
Diffusion Bonding ◽  
Mechanical Characterization ◽  
Base Material ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
X Ray ◽  
Distribution Maps ◽  
Base Materials

This paper aims to investigate the diffusion bonding of Ti6Al4V to Al2O3. The potential of the use of reactive nanolayered thin films will also be investigated. For this purpose, Ni/Ti multilayer thin films with a 50 nm modulation period were deposited by magnetron sputtering onto the base materials. Diffusion bonding experiments were performed at 800 °C, under 50 MPa and a dwell time of 60 min, with and without interlayers. Microstructural characterization of the interface was conducted through scanning electron microscopy (SEM) with energy-dispersive X-ray spectroscopy (EDS). The joints experiments without interlayer were unsuccessful. The interface is characterized by the presence of a crack close to the Al2O3 base material. The results revealed that the Ni/Ti reactive multilayers improved the diffusion bonding process, allowing for sound joints to be obtained at 800 °C for 60 min. The interface produced is characterized by a thin thickness and is mainly composed of NiTi and NiTi2 reaction layers. Mechanical characterization of the joint was assessed by hardness and reduced Young’s modulus distribution maps that enhance the different phases composing the interface. The hardness maps showed that the interface exhibits a hardness distribution similar to the Al2O3, which can be advantageous to the mechanical behavior of the joints.

Characterization of Pb(ScTa)1−xTixO3 (x<0.3) Thin Films Grown on LaNiO3 Coated Si by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
C. H. Lin ◽  
H. C. Kuo ◽  
G. E. Stillman ◽  
Haydn Chen
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Organic

AbstractHighly (100) textured pseudo-cubic Pb(ScTa)1−xTixO3 (x=0-0.3) (PSTT) thin films were grown by metal-organic chemical vapor deposition (MOCVD) on LaNiO3 (LNO) electrode buffered Si substrates at 650 °C. The microstructure and chemical uniformity were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nanoprobe X-ray energy dispersive spectroscopy (EDS). The temperature dependence of dielectric properties and P-E behavior were measured. A shift of Curie temperature of these PST-based thin films due to Ti addition was demonstrated, Furthermore, the pyroelectric properties of these thin films were estimated.

Growth and Characterization of PbTiO3 and Pb(Zr,Ti)O3 Thin Films by MOCVD

1994 ◽  
Vol 361 ◽  
Author(s):  
Y. Gao ◽  
W. Dong ◽  
B.A. Turtle
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Pzt Films ◽  
Uniform Composition

ABSTRACTFerroelectric PbTiO3 and Pb(Zr,Ti)O3 thin films with a perovskite structure were grown on MgO and Pt/Ti/SiO2/Si by MOCV.D. The microstructure and composition of the films were characterized by x-ray diffraction, SEM, and AES. Preferred orientation of either (111) or (100)/(001) was obtained on the Pt/Ti/SiO2/Si substrates at temperatures from 600 °C to 650 °C The preferred (111) orientation was attributed to the formation of the Pt3Ti phase in the Pt layer of the substrates, whereas the (100)/(001) orientations were inferred as the growth rate effect. AES depth profiling indicated a uniform composition through the thickness of the PZT films. However, SEM showed different topography and microstructure of the PZT films deposited in different oxygen partial pressure. Electrical properties of the PZT films appear varied as a function of the oxygen partial pressure in the reactor.

X-ray characterization of Au/Ni multilayer thin films

1992 ◽  
Vol 219 (1-2) ◽  
pp. 63-68 ◽  
Author(s):  
J. Chaudhuri ◽  
S.M. Alyan ◽  
A.F. Jankowski
Keyword(s):  
Thin Films ◽  
Multilayer Thin Films ◽  
X Ray

Three-dimensional characterization of Co/Pd multilayer thin films using resonant soft x-ray scattering

2017 ◽  
Vol 95 (9) ◽  
Author(s):  
Samuel Flewett ◽  
Durgamadhab Mishra ◽  
Thiago J. A. Mori ◽  
Christian M. Günther ◽  
Juliano C. Denardin ◽  
...  
Keyword(s):  
Thin Films ◽  
Three Dimensional ◽  
Multilayer Thin Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Sign in / Sign up

Export Citation Format

Share Document