Improvement of the Detection Sensitivity of Edxrf Trace Element Analysis by Means of Efficient X-Ray Focusing Based on Strongly Curved Hopg Crystals

1995 ◽  
Vol 39 ◽  
pp. 109-117
Author(s):  
Burkhard Beckhoff ◽  
Birgit Kanngießer

X-ray focusing based on Bragg reflection at curved crystals allows collection of a large solid angle of incident radiation, monochromatization of this radiation, and condensation of the beam reflected at the crystal into a small spatial cross-section in a pre-selected focal plane. Thus, for the Bragg reflected radiation, one can achieve higher intensities than for the radiation passing directly to the same small area in the focal plane. In that case one can profit considerably from X-ray focusing in an EDXRF arrangement. The 00 2 reflection at Highly Oriented Pyrolytic Graphite (HOPG) crystals offers a very high intensity of the Bragg reflected beam for a wide range of photon energies. Furthermore, curvature radii smaller than 10 mm can be achieved for HOPG crystals ensuring efficient X-ray focusing in EDXRF applications. For the trace analysis of very small amounts of specimen material deposited on small areas of thin-filter backings, HOPG based X-ray focusing may be used to achieve a very high intensity of monochromatic excitation radiation.

1990 ◽  
Vol 34 ◽  
pp. 263-276 ◽  
Author(s):  
Bruce W. Chappell

Undoubtedly the most important applications of X-ray fluorescence spectrometry (XRF) have been in the analysis of major elements where the technique provides a unique method of measuring the concentration of all elements having Z > 10 with extremely good precision in a wide range of matrices. However, XRF is in addition a powerful method for trace element analysis. In this discussion, the principles of the method for the trace element analysis of rocks are outlined, its capabilities are summarized, and the advantages and disadvantages of the technique are pointed out.


Author(s):  
John J. Donovan ◽  
Donald A. Snyder ◽  
Mark L. Rivers

We present a simple expression for the quantitative treatment of interference corrections in x-ray analysis. WDS electron probe analysis of standard reference materials illustrate the success of the technique.For the analytical line of wavelength λ of any element A which lies near or on any characteristic line of another element B, the observed x-ray counts at We use to denote x-ray counts excited by element i in matrix j (u=unknown; s=analytical standard; ŝ=interference standard) at the wavelength of the analytical line of A, λA (Fig. 1). Quantitative analysis of A requires an accurate estimate of These counts can be estimated from the ZAF calculated concentration of B in the unknown C,Bu measured counts at λA in an interference standard of known concentration of B (and containing no A), and ZAF correction parameters for the matrices of both the unknown and the interference standard at It can be shown that:


1976 ◽  
Vol 279 (2) ◽  
pp. 160-160 ◽  
Author(s):  
R. Zeisler ◽  
J. Cross ◽  
E. A. Schweikert

2007 ◽  
Vol 561-565 ◽  
pp. 2095-2098
Author(s):  
Takashi Harumoto ◽  
Ji Shi ◽  
Yoshio Nakamura

Pt/AlN multilayered films fabricated by alternative sputtering deposition were characterized by X-Ray Reflectometry and X-Ray Diffraction. As-deposited films have (111) and (001) preferred orientation for Pt and AlN, respectively. The X-Ray Reflectivity profiles are assigned to the total reflection and Bragg reflections due to periodic layer structure. The Bragg peaks are observed at the 2Theta range beyond 15 degree and the peak intensities increase after annealing. The reflectivity of the first order Bragg reflection is approximately 65% and is stable after annealing at 873K. Simulation of the reflectivity profile has shown roughnesses of the Pt/AlN interfaces are below 0.4nm. X-Ray Diffraction revealed the development of film texture and formation of superlattice by annealing. The latter indicates periodicity of film is very high.


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