Inhomogeneous Deformation in Thin Films

1995 ◽  
Vol 39 ◽  
pp. 627-635
Author(s):  
I. C. Noyan ◽  
C. C. Goldsmith
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Second Phase ◽  
Thermal Coefficient ◽  
Stress Distributions ◽  
Stress Determination ◽  
Phase Precipitation ◽  
Reliable Operation ◽  
X Ray ◽  
Layer Thin Film

Residual stresses are a major factor in the reliable operation of multi-layer thin film structures. These stresses may form due to defect incorporation during deposition, recrystallization, second-phase precipitation, thermal coefficient of expansion (TCE) mismatch, etc., as well as local plastic flow, delamination or cracking. In the literature, residual stresses are usually assumed to be constant in the plane of the film. This assumption is sometimes implicitly made, as in the cases where only two psi-tilts are used in the stress determination with the sin2Ψ analysis.In this paper, we will review the possible causes of heterogeneous stress distributions in thin films and discuss their impact on x-ray stress determination techniques using some new data from W films.

Application of Multi-Layer Thin Film Analysis by X-ray Spectrometry Using the Fundamental Parameter Method

1989 ◽  
Vol 33 ◽  
pp. 225-235
Author(s):  
Y. Kataoka ◽  
T. Arai
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Parameter Method ◽  
Fundamental Parameter ◽  
X Ray ◽  
Thin Film Analysis ◽  
Precise Analysis ◽  
Minimum Number ◽  
Layer Thin Film ◽  
Fundamental Parameter Method

The fundamental parameter method for x-ray spectrometry has been used most commonly for bulk samples, because it permits an analysis utilizing a minimum number of standards, even for samples with complicated matrices. The need for the analysis of thin film materials, which includes multi-layer films, has been increasing in recent years along with the rapid progress of high technologies. However, there have been few reports that deal with the application of fundamental parameter methods to multi-layer thin films. There may be two situations in the analysis of thin films. In routine analysis of quality control applications, they usually require precise analysis. Fortunately, it is possible to prepare well characterized standards similar to the unknowns.

Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

X-ray diffraction analysis of residual stresses in textured ZnO thin films

2017 ◽  
Vol 395 ◽  
pp. 16-23 ◽  
Author(s):  
E. Dobročka ◽  
P. Novák ◽  
D. Búc ◽  
L. Harmatha ◽  
J. Murín
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Diffraction Analysis ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray

X-Ray Diffraction and TEM Studies of the Delamination of Copper Thin Films from Glass and Silica Substrates

1989 ◽  
Vol 167 ◽  
Author(s):  
Alan G. Fox ◽  
Rowland M. Cannon
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Bragg Diffraction ◽  
Slight Reduction ◽  
X Ray Diffraction ◽  
Dislocation Generation ◽  
X Ray ◽  
Cu Films ◽  
Glass Substrates ◽  
Tensile Strains

AbstractThe events associated with fractures along interfaces between copper thin films and glass substrates were investigated by X-ray diffraction and transmission electron microscopy (TEM). In the as-bonded films the Bragg diffraction lines were shifted and broadened (relative to pure strain-free copper) due to residual in-plane tensile strains arising from the differences in thermal contraction between the copper and the substrates; TEM studies of these films in cross-section showed that the residual stresses had been relieved somewhat by dislocation densities as high as 1010 lines/cm2 in Cu/SiO2 films.The passage of a crack along the Cu/glass interfaces led to a significant reduction in the line shift and a slight reduction in the line broadening. Thus dislocations generated by the fracture events ‘plastically relaxed’ the residual stresses present in the as-bonded Cu by superposing a compressive component onto the pre-existing in-plane tensile strains. This dislocation generation was confirmed by TEM studies. In addition, it was found that the greater the strength of an interface, the greater was the reduction in mean strain due to the fracture; this is consistent with a larger crack-tip plastic zone and the generation of greater numbers of dislocations in the Cu films by fracture along interfaces of higher toughness (i.e. bond strength).

X-Ray Fluorescence Analysis of Multi-Layer Thin Films

1985 ◽  
Vol 29 ◽  
pp. 395-402 ◽  
Author(s):  
T. C. Huang ◽  
W. Parrish
Keyword(s):  
Thin Films ◽  
Single Layer ◽  
Fluorescence Analysis ◽  
Parameter Method ◽  
Fundamental Parameter ◽  
X Ray ◽  
Triple Layer ◽  
Layer Thin Film ◽  
Fundamental Parameter Method

AbstractThe characterization of multi-layer thin films by X-ray fluorescence using the fundamental parameter method and the LAMA-III program is described. Analyses of a double-layer FeMn/NiFe and two triple-layer NiFe/Cu/Cr and Cr/Cu/NiFe specimens show that the complex inter-layer absorption and secondary fluorescence effects were properly corrected. The compositions and thicknesses of all layers agreed to ±2% with corresponding single-layer films, a precisian comparable with bulk and single-layer thin film analyses.

Macro and Micro-Stress Distributions in Filled Epoxy Systems

1987 ◽  
Vol 31 ◽  
pp. 223-230
Author(s):  
L. T. Nguyen ◽  
I. C. Noyan
Keyword(s):  
Experimental Study ◽  
Residual Stresses ◽  
Linear Elasticity ◽  
Stress Distributions ◽  
X Ray Diffraction ◽  
Electronic Components ◽  
Linear Elasticity Theory ◽  
X Ray ◽  
Experimental Values ◽  
Epoxy Systems

The results of an experimental study on residual stresses within the encapsulation layers of electronic components are described. For this study, silicon wafers were coated with a flexibilized cycloaliphatic formulation filled with 30 and 40 (vol.) % of Cu particles. The residual stresses were determined by measuring the radii of curvature of the encapsulated wafers. The stress in the Cu particles at the surface was also measured by X-Ray diffraction. It was seen that the stresses within the structure are primarily macro-stresses, with little stress present within the Cu particles. Comparison of the experimental values to those calculated from linear elasticity theory also indicate relaxation within the composite during curing.

Residual Stress in Thin Films of Rf-Sputtered Aluminum by X-ray Multtaxial Stress Measurement

1995 ◽  
Vol 39 ◽  
pp. 433-438
Author(s):  
Shoukhi Ejiri ◽  
Zheng Lin ◽  
Tosihiko Sasaki ◽  
Yukio Hirose
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Stress Measurement ◽  
Multiaxial Stress ◽  
Argon Gas ◽  
X Ray

Residual stress in thin films of RF-sputtered aluminum coated on substrate of glass was measured by X-ray multiaxial stress measurement. The films were manufactured under the various conditions such as temperature of substrate ranged from 473K to 573K, and pressure of argon gas range from 0.0093Pato 13.3Pa respectively. These results brought comprehension that residual stress existed in tri-axial and that was influenced by temperature of substrate and pressure of argon gas. Residual stresses were unstable in range of less than 1.33Pa of pressure of argon gas.

Evolution of Residual Stresses in Thin Films Deposited on Mechanically Strained Substrates

1990 ◽  
Vol 203 ◽  
Author(s):  
G. Sheikh ◽  
A. Berger ◽  
I. C. Noyan
Keyword(s):  
Thin Films ◽  
Simple Model ◽  
Residual Stresses ◽  
Vapor Phase ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray ◽  
Cu Films ◽  
Residual Film ◽  
Nickel Substrates

ABSTRACTA simple model for the formation of residual stresses in thin films deposited on elastically strained substrates was derived and experimentally tested. In the experiments, Cu thin films were deposited on elastically stretched nickel substrates. These Cu films were2 to 4.m thick and were deposited through vapor phase evaporation or electroplating. The loads applied during the deposition were then relaxed, and the total stress in both the film and the substrate were monitored (by x-ray diffraction) during this relaxation. It was seen that the final (residual) film stresses were significantly different for bothdeposition methods. The causes of such differences are discussed.

Generation of Residual Stresses and Improvement of Surface Integrity Characteristics by Laser Shock Processing

2011 ◽  
Vol 681 ◽  
pp. 480-485 ◽  
Author(s):  
Uros Trdan ◽  
Janez Grum ◽  
Michael R. Hill
Keyword(s):  
Residual Stresses ◽  
Second Phase ◽  
Laser Shock ◽  
X Ray Diffraction ◽  
Laser Shock Processing ◽  
X Ray ◽  
Stress Surface ◽  
Shock Wave Pressure ◽  
Shock Processing ◽  
Power Densities

The influence of different parameters of laser shock processing applied to a precipitation-hardened aluminium alloy 6082-T651, on residual stress, surface tophraphy and microhardness was investigated. Processing was performed with an innovative Nd:YLF laser with the power densities of 2 and 4 GW/cm2, with a uniform pulse duration of 18 ns. Laser shock processing experiments were performed with the closed ablation method to ensure a higher shock-wave pressure. In the first phase, the study was focused on an evaluation of surface topography, with the record of the surface roughness profile and with the surface evaluation at a scanning electron microscope JEOL JXA-8600M. Then followed measurement of microhardness HV0.2in the cross section region. In the second phase comparison of residual stresses which were measured using the X-ray diffraction, was performed. Laser shock processing turned out to be a very efficient technique to improve surface properties. On the basis of the micro plastic deformation induced by shock waves, an increased dislocation density in the specimen surface was obtained. The gradient of dislocation piling through the specimen depth improved the variation of microhardness and residual stresses, which, in turn, improves fatigue strength of the material under dynamic loading.

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