Evolution of Residual Stresses in Thin Films Deposited on Mechanically Strained Substrates

1990 ◽  
Vol 203 ◽  
Author(s):  
G. Sheikh ◽  
A. Berger ◽  
I. C. Noyan
Keyword(s):  
Thin Films ◽  
Simple Model ◽  
Residual Stresses ◽  
Vapor Phase ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray ◽  
Cu Films ◽  
Residual Film ◽  
Nickel Substrates

ABSTRACTA simple model for the formation of residual stresses in thin films deposited on elastically strained substrates was derived and experimentally tested. In the experiments, Cu thin films were deposited on elastically stretched nickel substrates. These Cu films were2 to 4.m thick and were deposited through vapor phase evaporation or electroplating. The loads applied during the deposition were then relaxed, and the total stress in both the film and the substrate were monitored (by x-ray diffraction) during this relaxation. It was seen that the final (residual) film stresses were significantly different for bothdeposition methods. The causes of such differences are discussed.

X-Ray Diffraction and TEM Studies of the Delamination of Copper Thin Films from Glass and Silica Substrates

1989 ◽  
Vol 167 ◽  
Author(s):  
Alan G. Fox ◽  
Rowland M. Cannon
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Bragg Diffraction ◽  
Slight Reduction ◽  
X Ray Diffraction ◽  
Dislocation Generation ◽  
X Ray ◽  
Cu Films ◽  
Glass Substrates ◽  
Tensile Strains

AbstractThe events associated with fractures along interfaces between copper thin films and glass substrates were investigated by X-ray diffraction and transmission electron microscopy (TEM). In the as-bonded films the Bragg diffraction lines were shifted and broadened (relative to pure strain-free copper) due to residual in-plane tensile strains arising from the differences in thermal contraction between the copper and the substrates; TEM studies of these films in cross-section showed that the residual stresses had been relieved somewhat by dislocation densities as high as 1010 lines/cm2 in Cu/SiO2 films.The passage of a crack along the Cu/glass interfaces led to a significant reduction in the line shift and a slight reduction in the line broadening. Thus dislocations generated by the fracture events ‘plastically relaxed’ the residual stresses present in the as-bonded Cu by superposing a compressive component onto the pre-existing in-plane tensile strains. This dislocation generation was confirmed by TEM studies. In addition, it was found that the greater the strength of an interface, the greater was the reduction in mean strain due to the fracture; this is consistent with a larger crack-tip plastic zone and the generation of greater numbers of dislocations in the Cu films by fracture along interfaces of higher toughness (i.e. bond strength).

Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

X-ray diffraction analysis of residual stresses in textured ZnO thin films

2017 ◽  
Vol 395 ◽  
pp. 16-23 ◽  
Author(s):  
E. Dobročka ◽  
P. Novák ◽  
D. Búc ◽  
L. Harmatha ◽  
J. Murín
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Diffraction Analysis ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray

Phase Formation in Cu(Sn) Alloy Thin Films

1996 ◽  
Vol 427 ◽  
Author(s):  
L. A. Clevenger ◽  
B. Arcot ◽  
W. Ziegler ◽  
E. G. Colgan ◽  
Q. Z. Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Intermetallic Phase ◽  
Electron Beam Evaporation ◽  
Film Structure ◽  
Film Deposition ◽  
Atomic Percent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films

AbstractThe interdiffusion of Cu and Sn and the formation and dissolution of Cu-Sn precipitate phases have been examined for Cu(Sn) alloy thin films. Cu(Sn) films were deposited by electron beam evaporation in either a Sn/Cu bilayer or Cu/Sn/Cu trilayer film structure, with overall Sn concentrations from 0.1 to 5 atomic percent. Analysis by in situ resistivity, calorimetry, electron diffraction and x-ray diffraction measurements indicates that the bilayer and trilayer films form the intermetallic phase η-Cu6 Sn5 during film deposition. Upon heating, the ε-Cu3Sn phase forms at 170°C, then this phase dissolves into the Cu matrix at approximately 350°C. Finally, ζ- Cu10Sn3 phase forms and precipitates after heating to 500°C and cooling to room temperature. The final resistivity of Cu/Sn/Cu films with more than 2 atomic percent Sn was greater than 3.5 μΩ - cm. However, resistivities from 1.9 to 2.5 μΩ - cm after annealing were obtained with Cu/Sn/Cu films containing less than 2 atomic percent Sn.

Morphology and Microstructure of Tungsten Films by Magnetron Sputtering

2018 ◽  
Vol 913 ◽  
pp. 416-423 ◽  
Author(s):  
Jian Gang Yu ◽  
Wen Jia Han ◽  
Zhong Chao Sun ◽  
Kai Gui Zhu
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Magnetron Sputtering ◽  
Processing Parameters ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray ◽  
Grain Orientations ◽  
Morphology Of Films ◽  
Scanning Electron

In this work, tungsten thin films were deposited on different substrates by magnetron sputtering and some of the films were then annealed at 1000°C for 1 hour in order to investigate the influence of different processing parameters on morphology and microstructure of films. Scanning electron microscope and x-ray diffraction were used to detect the morphology and microstructure of films. Under the same conditions, the thin films on different substrates showed different preferred grain orientations although the morphologies were similar. After thermal treatment, the morphology of films changed significantly and the total stress parallel to film surfaces dropped off sharply.

Multilayer Fe/Cu Films

1986 ◽  
Vol 77 ◽  
Author(s):  
S. H. Liou ◽  
Gang Xiao ◽  
C. L. Chien ◽  
K. M. Unruh
Keyword(s):  
Thin Films ◽  
Magnetic Moment ◽  
Multilayer Films ◽  
Squid Magnetometry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films ◽  
Ssbauer Spectroscopy ◽  
Cu Alloys ◽  
Small Magnetic Moment

ABSTRACTMultilayer films consisting of alternating Fe and Cu thin films have been made by a twin-gun sputtering device with a rotating substrate platform. Both proportional modulated films and films with a fixed Cu layer have been fabricated, where the Fe layer has been varied between 10 and 150 Å. These films have been studied by x-ray diffraction, Mö;ssbauer spectroscopy and SQUID magnetometry. Thin Fe layers with thicknesses less than 25 Å, exist only as fee α-Fe. Thicker Fe layers contain both bec and fee Fe. The interface between Fe and Cu appears very sharp with no evidence of Fe-Cu alloys. The α-Fe state orders magnetically below 100 K with a small magnetic moment.

X-ray tensile testing of thin films

1993 ◽  
Vol 8 (4) ◽  
pp. 764-770 ◽  
Author(s):  
I.C. Noyan ◽  
G. Sheikh
Keyword(s):  
Thin Films ◽  
Tensile Test ◽  
Mechanical Stress ◽  
Uniaxial Tensile ◽  
Uniaxial Tensile Test ◽  
X Ray Diffraction ◽  
Stress Strain ◽  
X Ray ◽  
Cu Films ◽  
Multiphase Materials

The “x-ray tensile test” is the combination of the standard uniaxial tensile test with x-ray diffraction techniques. In this test, in addition to the mechanical stress-strain values usually obtained from a tensile test, one measures the x-ray strain and stress in the diffracting regions of the sample. In multilayer thin films or in multiphase materials, x-ray diffraction enables the determination of strains and stresses in the individual layers or phases. Correlation of the x-ray data with the mechanical stress-strain values may be used to analyze strain and load partitioning within the specimen. In this paper an extended theoretical analysis of this technique and its application to evaporated Cu films on Ni substrates is presented.

Sign in / Sign up

Export Citation Format

Share Document