X-ray diffraction analysis of residual stresses in textured ZnO thin films

2017 ◽  
Vol 395 ◽  
pp. 16-23 ◽  
Author(s):  
E. Dobročka ◽  
P. Novák ◽  
D. Búc ◽  
L. Harmatha ◽  
J. Murín
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Diffraction Analysis ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray

Effects of annealing parameters on residual stress and piezoelectric performance of ZnO thin films studied by X-ray diffraction and atomic force microscopy

2019 ◽  
Vol 52 (5) ◽  
pp. 951-959
Author(s):  
Jie-Nan Shen ◽  
Yi-Bo Zeng ◽  
Ma-Hui Xu ◽  
Lin-Hui Zhu ◽  
Bao-Lin Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Annealing Temperature ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Piezoelectric Performance

The residual stresses and piezoelectric performance of ZnO thin films under different annealing parameters have been studied by X-ray diffraction and atomic force microscopy (AFM). First, ZnO thin films with a thickness of 800 nm were grown on a Pt/Ti/SiO2/Si substrate by magnetron sputtering. Second, the orthogonal experimental method was selected to study the effects of annealing temperature, annealing time and oxygen content on the residual stresses of the ZnO thin films. The residual stresses of the ZnO thin films were measured by X-ray diffraction and the sin2ψ method. Finally, the three-dimensional topography and piezoelectric performance of the ZnO thin films were measured by AFM. The results showed that the oxygen content during the annealing process has the greatest effect on the residual stress, followed by the annealing temperature and annealing time. A minimum residual stress and optimal piezoelectric performance can be realized by annealing the ZnO thin film in pure oxygen at 723 K for 30 min.

scholarly journals X-ray diffraction analysis of the structure and residual stresses of W/Cu multilayers

2006 ◽  
Vol 201 (7) ◽  
pp. 4372-4376 ◽  
Author(s):  
B. Girault ◽  
P. Villain ◽  
E. Le Bourhis ◽  
P. Goudeau ◽  
P.-O. Renault
Keyword(s):  
Residual Stresses ◽  
Diffraction Analysis ◽  
X Ray Diffraction ◽  
X Ray

X-Ray Diffraction Analysis of High Tc Superconducting Thin Films

1989 ◽  
pp. 269-278
Author(s):  
T. C. Huang ◽  
A. Segmüller ◽  
W. Lee ◽  
V. Lee ◽  
D. Bullock ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
High Tc ◽  
X Ray

Neutron and X-Ray Diffraction Analysis of Residual Stresses in Cold-Rolled Pearlitic Steel Sheet

2006 ◽  
pp. 375-380
Author(s):  
Marc Seefeldt ◽  
Artur Walentek ◽  
Paul Van Houtte ◽  
Miroslav Vrána ◽  
Petr Lukáš
Keyword(s):  
Residual Stresses ◽  
Diffraction Analysis ◽  
Steel Sheet ◽  
Pearlitic Steel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cold Rolled

Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

X-Ray Diffraction Analysis of Steel with Oxidised Surface Layer

2016 ◽  
Vol 368 ◽  
pp. 99-102
Author(s):  
Lukáš Zuzánek ◽  
Ondřej Řidký ◽  
Nikolaj Ganev ◽  
Kamil Kolařík
Keyword(s):  
Residual Stress ◽  
Surface Layer ◽  
Residual Stresses ◽  
Diffraction Analysis ◽  
Oxide Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolytic Polishing ◽  
Small Depth

The basic principle of the X-ray diffraction analysis is based on the determination of components of residual stresses. They are determined on the basis of the change in the distance between atomic planes. The method is limited by a relatively small depth in which the X-ray beam penetrates into the analysed materials. For determination of residual stresses in the surface layer the X-ray diffraction and electrolytic polishing has to be combined. The article is deals with the determination of residual stress and real material structure of a laser-welded steel sample with an oxide surface layer. This surface layer is created during the rolling and it prevents the material from its corrosion. Before the X-ray diffraction analysis can be performed, this surface layer has to be removed. This surface layer cannot be removed with the help of electrolytic polishing and, therefore, it has to be removed mechanically. This mechanical procedure creates “technological” residual stress in the surface layer. This additional residual stress is removed by the electrolytic polishing in the depth between 20 and 80 μm. Finally, the real structure and residual stresses can be determined by using the X-ray diffraction techniques.

Effect of Flexible Substrates on the Structural and Optical Properties of ZnO Films Deposited by Sputtering Method

2015 ◽  
Vol 1107 ◽  
pp. 678-683 ◽  
Author(s):  
Lam Mui Li ◽  
Azmizam Manie Mani ◽  
Saafie Salleh ◽  
Afishah Alias
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Low Cost ◽  
Argon Plasma ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Plastic Substrate ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray

Zinc Oxide (ZnO) has attracted much attention because of its high optical transmittance approximately ~80 % with a wide band gap of (3.3 eV at 300 K) and a relatively low cost material. ZnO thin films were deposited on plastic substrate using RF powered magnetron sputtering method. The target used is ZnO disk with 99.99 % purity. The sputtering processes are carried out with argon gas that flow from 10-15 sccm. Argon is used to sputter the ZnO target because the ability of argon that can remove ZnO layer effectively by sputtering with argon plasma bombardment. The deposited ZnO thin films are characterized using X-Ray Diffraction (XRD) and UV-Vis Spectrometer. The analysis of X-ray diffraction show that good crystalline quality occurs at nominal thickness of 400 nm. The optical studies showed that all the thin films have high average transmittance of approximately 80 % and the estimated value of optical band gap is within 3.1 eV-3.3 eV range.

Electron carrier concentration dependent magnetization in ZnO:Co and ZnO:Mn thin films

2007 ◽  
Vol 1035 ◽  
Author(s):  
Zheng Yang ◽  
Maurizio Biasini ◽  
Leelaprasanna J Mandalapu ◽  
Zheng Zuo ◽  
Ward P Beyermann ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Concentration ◽  
Concentration Dependence ◽  
Long Range ◽  
Room Temperature ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Electron Carrier ◽  
X Ray ◽  
Curie Temperatures

AbstractCo and Mn ions were implanted into n-type ZnO thin films with different electron carrier concentrations. X-ray diffraction measurements show that the ZnO:Co and ZnO:Mn thin films are of high crystallinity. From magnetization measurements, ferromagnetism was observed in both n-type ZnO:Co and n-type ZnO:Mn thin films with Curie temperatures well-above room temperature. Furthermore, the electron carrier concentration dependence of the saturated magnetization was measured in both types of thin films, and our results support an electron-mediated mechanism for ferromagnetism in ZnO:Co, as predicted by theory. However, our measurements seem to contradict theory for ZnO:Mn, which only predicts long-range ferromagnetism for p-type mediated material.

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