scholarly journals Hydrodynamic Device Modeling with Band Nonparabolicity

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 181-183
Author(s):  
J. Cai ◽  
H. L. Cui ◽  
E. H. Lenzing ◽  
R. Pastore ◽  
D. L. Rhodes ◽  
...  
Keyword(s):  
Loss Rate ◽  
Semiconductor Device ◽  
Relaxation Rates ◽  
Balance Equations ◽  
Full Account ◽  
One Dimensional ◽  
Device Model ◽  
Carrier Interaction ◽  
Band Nonparabolicity ◽  
Dynamical Screening

A semiconductor device model based on a set of quantum mechanically derived hydrodynamic balance equations are presented. This model takes full account of band nonparabolicity, in addition to its other useful features such as the explicit evaluation of momentum and energy relaxation rates, in the form of frictional force and energy loss rate, within the model, and inclusion of carrier-carrier interaction effects, such as dynamical screening. Numerical results of one-dimensional device simulations are presented and compared with parabolic approximations.

scholarly journals BANDGAP NARROWING IN NANO-WIRES

2006 ◽  
Vol 17 (02) ◽  
pp. 167-185 ◽  
Author(s):  
KOUROSH NOZARI ◽  
MAHYAR MADADI
Keyword(s):  
Phonon Interaction ◽  
Electron Hole ◽  
One Dimensional ◽  
Confinement Potential ◽  
Exchange Correlation ◽  
Electron Hole Plasma ◽  
Screened Coulomb Potential ◽  
Nano Wires ◽  
Potential Width ◽  
Dynamical Screening

In this paper we consider two different geometry of quasi one-dimensional semiconductors and calculate their exchange-correlation induced bandgap renormalization (BGR) as a function of the electron-hole plasma density and quantum wire width. Based on different fabrication scheme, we define suitable external confinement potential and then leading-order GW dynamical screening approximation is used in the calculation by treating electron–electron Coulomb interaction and electron-optical phonon interaction. Using a numerical scheme, screened Coulomb potential, probability of different states, profile of charge density and the values of the renormalized gap energy are calculated and the effects of variation of confinement potential width and temperature are studied.

scholarly journals On the thermal atmospheric escape of π Men c

2021 ◽  
Author(s):  
E. S. Kalinicheva ◽  
◽  
V. I. Shematovich ◽  
Ya. N. Pavlyuchenkov ◽  
◽  
...  
Keyword(s):  
Mass Loss ◽  
Loss Rate ◽  
Mass Loss Rate ◽  
Upper Atmosphere ◽  
One Dimensional ◽  
Atmospheric Escape ◽  
Self Consistent ◽  
Atmospheric Mass ◽  
Suprathermal Particles

In this work we present the results of the modeling of exoplanet pi Men c upper atmosphere, produced using the previously developed one-dimensional self-consistent aeronomic model. The model used takes into account the contribution of suprathermal particles, which significantly refines the heating function of the atmosphere. The hight profiles of temperature, velocity and density were obtained, the atmospheric mass-loss rate was calculated. The presence of two hight-scales in the structure of the atmosphere was found: the first corresponds to a relatively dense stationary atmosphere, the second to a more rarefied corona.

scholarly journals Asymptotic temperature of a lossy condensate

2020 ◽  
Vol 8 (4) ◽  
Author(s):  
Isabelle Bouchoule ◽  
Max Schemmer
Keyword(s):  
Sound Velocity ◽  
Loss Rate ◽  
Theoretical Calculations ◽  
Quantitative Agreement ◽  
Energy Scale ◽  
Atomic Mass ◽  
Collective Modes ◽  
Asymptotic Value ◽  
One Dimensional ◽  
Theoretical Predictions

We monitor the time evolution of the temperature of phononic collective modes in a one-dimensional quasicondensate submitted to losses. At long times the ratio between the temperature and the energy scale mc^2mc2, where mm is the atomic mass and cc the sound velocity takes, within a precision of 20%, an asymptotic value. This asymptotic value is observed while mc^2mc2 decreases in time by a factor as large as 2.5. Moreover this ratio is shown to be independent on the loss rate and on the strength of interactions. These results confirm theoretical predictions and the measured stationary ratio is in quantitative agreement with the theoretical calculations.

A stochastic resonator in a layered semiconductor device

2021 ◽  
Author(s):  
Tibebe Birhanu ◽  
Yoseph Abebe ◽  
Lemi Demeyu ◽  
Mesfin Taye ◽  
Mulugeta Bekele
Keyword(s):  
Background Noise ◽  
Semiconductor Device ◽  
Weak Signal ◽  
Layered Semiconductor ◽  
One Dimensional ◽  
The One ◽  
Parameter Values ◽  
Potential Landscape ◽  
Double Well Potential ◽  
Tunable Oscillator

In this paper, we propose a device that picks up a periodic but weak signal by amplifying it assisted by the existing background noise. The device consists of a doped layered semiconductor with three gates that generate a one-dimensional double-well potential along the semiconductor. A laser coolant is to be shined on the other side of the central gate perpendicular to the one-dimensional layer causing triple-well potential. A weak tunable oscillator imposed parallel to the layer that rocks the potential landscape can pick up an incoming signal of interest as a result of resonance. To justify the model, we carried out analytic calculation as well as Monte Carlo simulation. The two approaches agree reasonably well for all the different parameter values we used.

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