scholarly journals X-Ray Photoemission Study of the Oxidation of Hafnium

2009 ◽  
Vol 2009 ◽  
pp. 1-6 ◽  
Author(s):  
A. R. Chourasia ◽  
J. L. Hickman ◽  
R. L. Miller ◽  
G. A. Nixon ◽  
M. A. Seabolt
Keyword(s):  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Chemical Reactivity ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
X Ray ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Photoemission Study ◽  
Substrate Temperatures

About 20 Å of hafnium were deposited on silicon substrates using the electron beam evaporation technique. Two types of samples were investigated. In one type, the substrate was kept at the ambient temperature. After the deposition, the substrate temperature was increased to 100, 200, and 300∘C. In the other type, the substrate temperature was held fixed at some value during the deposition. For this type, the substrate temperatures used were 100, 200, 300, 400, 500, 550, and 600∘C. The samples were characterized in situ by the technique of X-ray photoelectron spectroscopy. No trace of elemental hafnium is observed in the deposited overlayer. Also, there is no evidence of any chemical reactivity between the overlayer and the silicon substrate over the temperature range used. The hafnium overlayer shows a mixture of the dioxide and the suboxide. The ratio of the suboxide to dioxide is observed to be more in the first type of samples. The spectral data indicate that hafnium has a strong affinity for oxygen. The overlayer gets completely oxidized to form HfO2 at substrate temperature around 300∘C for the first type of samples and at substrate temperature greater than 550∘C for the second type.

MAGNETIC BEHAVIOR OF NANOGRANULAR SILICIDE PHASE (FORMED DUE TO SWIFT HEAVY Fe7+ ION IRRADIATION-INDUCED INTERMIXING)

NANO ◽  
2007 ◽  
Vol 02 (02) ◽  
pp. 129-137
Author(s):  
P. C. SRIVASTAVA ◽  
J. K. TRIPATHI
Keyword(s):  
Magnetic Particles ◽  
Ion Irradiation ◽  
Magnetic Behavior ◽  
Electron Beam Evaporation ◽  
Silicide Phase ◽  
Silicon Substrates ◽  
Zero Field ◽  
Electron Beam Evaporation Technique ◽  
Average Grain Size ◽  
Evaporation Technique

Fe films (of ~50 nm ) on p-silicon substrates have been deposited by electron beam evaporation technique to realize Fe /p Si devices. The devices have been irradiated from 100 MeV swift heavy ions of Fe 7+ with a fluence of 1014 ions-cm-2. The morphological and structural characterization have been done from SEM, AFM and XRD facilities. Magnetic behavior has been studied from vibrating sample magnetometer (VSM) and SQUID facilities. SEM and AFM studies show the formation of a nanogranular structure. Further, XRD data has shown the formation of intermixed magnetic nanogranular silicide phase ( Fe 5 Si 3) having average grain size of 25 nm. M–H and ZFC (zero field-cooled)/FC (field-cooled) studies show the magnetic behavior of interacting magnetic particles. The observed results have been understood as a typical behavior of interacting magnetic nanograins.

Hole Doping Through Indium Intercalation into Copper Phthalocyanine

2013 ◽  
Vol 802 ◽  
pp. 273-278 ◽  
Author(s):  
Anuchit Jaruvanawat ◽  
Pakorn Prajuabwan ◽  
Sunit Rojanasuwan ◽  
Annop Chanhom ◽  
Adirek Rangkasikorn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Copper Phthalocyanine ◽  
High Vacuum ◽  
Hole Transport ◽  
Hole Doping ◽  
Silicon Substrates ◽  
X Ray ◽  
Evaporation Technique

A blend of molecular acceptor and molecular donor made of Copper Phthalocyanine (CuPc) and Indium in various ratios were evaporated in high vacuum on to intrinsic silicon substrates by using vacuum thermal co-evaporation technique. Electronic properties of In-doped CuPc thin films have been examined by X-ray photoelectron spectroscopy (XPS). The results obtained by XPS suggests that In-doped CuPc is a hole transport material.

INFLUENCE OF SUBSTRATE TEMPERATURE ON THE COMPOSITION, ELECTRICAL RESISTIVITY AND INFRARED EMISSIVITY OF PtOx FILMS

2019 ◽  
Vol 26 (09) ◽  
pp. 1950056
Author(s):  
WENBO KANG ◽  
DONGMEI ZHU ◽  
XIAOKE LU ◽  
ZHIBIN HUANG ◽  
WANCHENG ZHOU ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Grazing Incidence ◽  
Infrared Emissivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure Morphology ◽  
Influence Of Substrate ◽  
Substrate Temperatures

PtOx films were deposited by direct current (DC) reactive magnetron sputtering in Ar/O2 mixture atmosphere at substrate temperatures ranging from 200∘C to 400∘C. The influence of substrate temperature on the structure, morphology, composition, electrical resistivity and infrared emissivity of PtOx films was studied. The X-ray photoelectron spectroscopy (XPS) and grazing incidence X-ray diffraction (GIXRD) results revealed that the as-deposited amorphous PtOx films were mainly composed of PtO and PtO2 phases. It was found that with the increase in the substrate temperature, the proportion of PtO phase in the films increased, while the electrical resistivity and infrared emissivity of the films decreased with the increasing substrate temperature.

scholarly journals Effect of Substrate Temperature on the Microstructural, Morphological, and Optical Properties of Electrosprayed ZnO Thin Films

2018 ◽  
Vol 2018 ◽  
pp. 1-7 ◽  
Author(s):  
Georgi Marinov ◽  
Velichka Strijkova ◽  
Marina Vasileva ◽  
Violeta Madjarova ◽  
Nikola Malinowski ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Structural Disorder ◽  
Zno Thin Films ◽  
Zno Films ◽  
Silicon Substrates ◽  
X Ray ◽  
Force Microscopy ◽  
Influence Of Substrate

Polycrystalline ZnO thin films were prepared on silicon substrates using electrospray method with vertical setup. Water and ethanol were used as solvents for zinc acetate dehydrate and no postdeposition annealing was required for formation of ZnO. The influence of substrate temperature in the range of 150–250°C on surface morphology and roughness was studied by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and optical profilometry. An improvement of surface quality and smoothing of the films with temperature were obtained. X-ray diffraction measurements revealed that, at all investigated substrate temperatures, the films were polycrystalline with crystallites’ sizes decreasing with temperature. Besides, the preferred crystal orientation varies with the substrate temperature. The analysis of surface chemical composition and oxidation state was performed with X-ray photoelectron spectroscopy (XPS). It was shown that, at substrate temperature of 200°C, the deposited ZnO films were closest to the stoichiometric ones. In general, the films at 150°C were oxygen-deficient, while at other studied temperatures, the films had excess of oxygen more pronouncedly at 200°C. Spectral ellipsometric measurements confirmed that the structural disorder is the highest at 150°C and improves with temperature. Refractive indexes for films at 200°C and 250°C are almost the same, 1.97 and 1.93, respectively, at wavelength of 600 nm, while for the sample deposited at 150°C, the refractive index is substantially lower, 1.67. The optical band gap is slightly influenced by the substrate temperature: 3.27 eV at 150°C and 3.32 eV at 200°C.

Influence of Substrate Temperature on Tin Oxide Thin Films Deposited by Electron Beam Evaporation Technique

1992 ◽  
Vol 242 ◽  
Author(s):  
S. M. Rozati ◽  
S. Mirzapour ◽  
M. G. Takwale ◽  
B. R. Marathe ◽  
V. G. Bhide
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Electron Beam Evaporation ◽  
Electron Beam Evaporation Technique ◽  
Evaporation Technique ◽  
Influence Of Substrate ◽  
Tin Oxide Films ◽  
Deposited Films

ABSTRACTTransparent conducting tin oxide films were prepared by an electron beam evaporation technique. As-deposited films were amorphous or polycrystalline depending on the substrate temperature and the time of deposition. In order to get transparent and conducting thin films of SnO2, as-deposited films were subjected to further heat-treatment in air at 650°C for 2 hours. Physical properties of as-deposited and annealed films are discussed with reference to substrate temperature and deposition time.

Epitaxial Crystallization of Ge on Si Using Evaporation and Recrystallization Techniques

1986 ◽  
Vol 67 ◽  
Author(s):  
El Hang Lee ◽  
M. Abdul Awal ◽  
G. K. Celler ◽  
L. Pfeiffer ◽  
T. T. Sheng
Keyword(s):  
Electron Beam ◽  
Surface Morphology ◽  
Lattice Mismatch ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
Insulator Interface ◽  
Electron Beam Evaporation Technique ◽  
Roughened Surface ◽  
Evaporation Technique

ABSTRACTGermanium films have been epitaxially crystallized on silicon substrates using the electron-beam evaporation technique and the laser! strip-heater recrystallization technique. Epitaxy was achieved either directly on Si surfaces or laterally on oxide/nitride-coated Si wafers. Evaporated Ge epi-layers were mirror-smooth and were found to be in excellent crystal quality. The recrystallized Ge on Si were also found to be good crystal, but showed somewhat roughened surface morphology. In both cases, the Ge near the Ge/Si interface is heavily replete with misfit dislocations arising from 4% lattice mismatch between Ge and Si. The recrystallized Ge on insulator (GOI) showed no mismatch dislocations at the Ge/insulator interface but developed voids arising from Ge dewetting from the insulator surface. Twins have been observed to be the most prominent defects in recrystallized Ge, whether seeded or unseeded. The objective of this study is to achieve quality Ge layers that can be used as intermediate template to accomodate GaAs on Si.

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