scholarly journals The Fabrication and Indentation of Cubic Silicon Carbide Diaphragm for Acoustic Sensing

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1101
Author(s):  
Siti Aisyah Zawawi ◽  
Azrul Azlan Hamzah ◽  
Burhanuddin Yeop Majlis ◽  
Faisal Mohd-Yasin
Keyword(s):  
Silicon Carbide ◽  
Plastic Deformation ◽  
Elastic Behaviour ◽  
Maximum Pressure ◽  
Acoustic Sensors ◽  
Si Substrate ◽  
Optimum Dimension ◽  
Two Samples ◽  
Low Load ◽  
Cubic Silicon Carbide

In this study, 550 nm thick cubic silicon carbide square diaphragms were back etched from Si substrate. Then, indentation was carried out to samples with varying dimensions, indentation locations, and loads. The influence of three parameters is documented by analyzing load-displacement curves. It was found that diaphragms with bigger area, indented at the edge, and low load demonstrated almost elastic behaviour. Furthermore, two samples burst and one of them displayed pop-in behaviour, which we determine is due to plastic deformation. Based on optimum dimension and load, we calculate maximum pressure for elastic diaphragms. This pressure is sufficient for cubic silicon carbide diaphragms to be used as acoustic sensors to detect poisonous gasses.

scholarly journals Growth Mechanism of Cubic-Silicon Carbide Nanowires

2009 ◽  
Vol 2009 ◽  
pp. 1-5 ◽  
Author(s):  
K. Y. Cheong ◽  
Z. Lockman
Keyword(s):  
Silicon Carbide ◽  
Activated Carbon ◽  
Vapor Phase ◽  
Growth Mechanism ◽  
Carbon Powder ◽  
Si Substrate ◽  
Sic Nanowires ◽  
Cubic Silicon Carbide

Cubic-SiC nanowires were synthesized using activated carbon powder and Si substrate in vacuum at 1200–1350°C for 1–4 hours. The nanowires were grown according to the following proposed mechanisms: (1) diffusion of C/CO into Si substrate, (2) weakening of Si bond and atomic kick-out, (3) formation of Si-C in vapor phase, (4) formation of saturated SiC layer, (5) formation of pyramid-like SiC nanostructure, and (6) formation of SiC nanowires.

Theoretical study of intrinsic defects in cubic silicon carbide 3C -SiC

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards
Keyword(s):  
Silicon Carbide ◽  
Theoretical Study ◽  
Intrinsic Defects ◽  
Cubic Silicon Carbide

Percolation Effects in the Mechanical Properties of Granular Ni-A12O3 thin films

1990 ◽  
Vol 195 ◽  
Author(s):  
T.E. Schlesinger ◽  
A. Gavrin ◽  
R.C. Cammarata ◽  
C.-L. Chien
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Plastic Deformation ◽  
Magnetic Properties ◽  
Percolation Threshold ◽  
Volume Fraction ◽  
Electrical And Magnetic Properties ◽  
Low Load

ABSTRACTThe mechanical properties of sputtered Ni-Al2O3 granular thin films were investigated by low load microharaness testing. It was found that the microhardness of these films displayed a percolation threshold at a nickel volume fraction of about 0.6, below which the hardness is greatly enhanced. This behavior is qualitatively similar to the electrical and magnetic properties of these types of films. A percolation threshold in hardness can be understood as due to a change in the mechanism for plastic deformation.

Characterization of Partially Premixed Combustion With Ethanol: EGR Sweeps, Low and Maximum Loads

2009 ◽  
Author(s):  
Vittorio Manente ◽  
Bengt Johansson ◽  
Pert Tunestal
Keyword(s):  
High Efficiency ◽  
Pressure Rise ◽  
Premixed Combustion ◽  
Maximum Pressure ◽  
Pressure Rise Rate ◽  
Partially Premixed Combustion ◽  
Rise Rate ◽  
Low Load ◽  
Partially Premixed

EGR sweeps were performed on Ethanol Partially Premixed Combustion, PPC, to show different emission and efficiency trends as compared to Diesel PPC. The sweeps showed that increasing the EGR rate the efficiency does not diminish, HC trace is flat and CO is low even with 45% of EGR. NOx exponentially decreases by increasing EGR while soot levels are nearly zero throughout the sweep. The EGR sweeps underlined that at high EGR levels, the pressure rise rate is a concern. To overcome this problem and keep high efficiency and low emissions a sweep in timing of the pilot injection and pilot-main ratio was done at ∼16.5 bar gross IMEP. It was found that with a pilot-main ratio of 50–50 and by placing the pilot at −60 with 42% of EGR, NOx and soot are below EURO VI levels, the indicated efficiency is 47% and the maximum pressure rise rate is below 10 bar/CAD. Low load conditions were examined as well. It was found that by placing the SOI at −35 TDC the efficiency is maximized on the other hand when the injection is at −25 the emissions are minimized and the efficiency is only 1.64% lower than its optimum value. The idle test also showed that a certain amount of EGR is needed in order to minimize the pressure rise rate.

Oxynitridation of cubic silicon carbide (100) surfaces

1999 ◽  
Vol 17 (5) ◽  
pp. 2629-2633 ◽  
Author(s):  
F. Amy ◽  
L. Douillard ◽  
V. Yu. Aristov ◽  
P. Soukiassian
Keyword(s):  
Silicon Carbide ◽  
Cubic Silicon Carbide
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