scholarly journals Fabrication of Si3N4Nanocrystals and Nanowires Using PECVD

2010 ◽  
Vol 2010 ◽  
pp. 1-4 ◽  
Author(s):  
Jingwei Song ◽  
Xiying Ma ◽  
Wang Zui ◽  
Chen Wei ◽  
Zhongpin Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Si Substrates ◽  
Fe Catalyst ◽  
Reactive Gases ◽  
Fe Ions ◽  
S Deposition

Si3N4nanowires and nanocrystals were prepared on Si substrates with or without Fe catalyst using silane (SiH4) and nitrogen (N2) as reactive gases through plasma-enhanced chemical vapor deposition (PECVD) technology. With Fe catalyst,Si3N4nanowires were developed, indicating that Fe catalyst played a role forSi3N4molecules directionally depositing into strings. The density of the nanowires is closely related to the density of Fe catalyst. When the density of Fe ions on the substrate was decreased remarkably, a smooth superlongSi3N4nanowire with 12 μm in length was fabricated. Having analyzed the growth mechanism, a growth model forSi3N4nanowires was developed. The growth ofSi3N4nanocrystallines was attributed to be a vapor-solid (V-S) deposition process.

The Modeling Routes for the Chemical Vapor Deposition Process

1994 ◽  
Vol 363 ◽  
Author(s):  
M. Pons ◽  
C. Bernard ◽  
H. Rouch ◽  
R. Madar
Keyword(s):  
Chemical Vapor Deposition ◽  
Mass Transport ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Solution Procedure ◽  
Chemical Vapor Deposition Process ◽  
Thermochemical Equilibrium ◽  
Reactive Gases ◽  
Vapor Deposition Process

AbstractThe purpose of this article is to present the modeling routes for the chemical vapor deposition process with a special emphasis to mass transport models with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two selected approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected results of thermodynamic and mass transport analysis and of the coupled approach showed that, for the deposition of Si1-x Gex solid solution at 1300 K (system Si-Ge-Cl-H-Ar), the thermodynamic heterogeneous stability of the reactive gases and the thermal diffusion led to the germanium depletion of the deposit.

Construction, characterization, and growth mechanism of high-density jellyfish-like GaN/SiOxNy nanomaterials on p-Si substrate by Au-assisted chemical vapor deposition approach

CrystEngComm ◽  
2019 ◽  
Vol 21 (26) ◽  
pp. 3966-3973 ◽  
Author(s):  
Pengkun Li ◽  
Kang Li ◽  
Shujing Sun ◽  
Chenlong Chen ◽  
B. G. Wang
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Density ◽  
Si Substrate ◽  
Si Substrates ◽  
P Type

High-density GaN/SiOxNy jellyfish-like nanomaterials are synthesized on Au-coated p-type Si substrates by a chemical vapor deposition approach.

Chemical Vapor Deposition of Sr1−xBaxNb2O6 Thin Films Using Metal Alkoxide Precursors

2000 ◽  
Vol 15 (8) ◽  
pp. 1702-1708
Author(s):  
Ruichao Zhang ◽  
Ren Xu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Thin Layers ◽  
Metal Alkoxide ◽  
Stoichiometry Control ◽  
Alkoxide Precursors

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

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