Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips

1-dimensional metal and semiconductor nanostructures exhibit interesting physical properties, but their integration into modern electronic devices is often a very challenging task. Finding the appropriate supports for nanostructures and nanoscale contacts are highly desired aspects in this regard. In present work we demonstrate the fabrication of 1D nano- and mesostructures between microstructured contacts formed directly on a silicon chip either by a thin film fracture (TFF) approach or by a modified vapor-liquid-solid (MVLS) approach. In principle, both approaches offer the possibilities to integrate these nano-meso structures in wafer-level fabrications. Electrical properties of these nano-micro structures integrated on Si chips and their preliminary applications in the direction of sensors and field effect transistors are also presented.

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Length separation of single-walled carbon nanotubes and its impact on structural and electrical properties of wafer-level fabricated carbon nanotube–field-effect transistors

Nanotechnology ◽

10.1088/0957-4484/27/43/435203 ◽

2016 ◽

Vol 27 (43) ◽

pp. 435203 ◽

Cited By ~ 3

Author(s):

Simon Böttger ◽

Sascha Hermann ◽

Stefan E Schulz ◽

Thomas Gessner

Keyword(s):

Carbon Nanotubes ◽

Carbon Nanotube ◽

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Single Walled Carbon Nanotubes ◽

Wafer Level ◽

Structural And Electrical Properties ◽

Length Separation ◽

Walled Carbon Nanotubes

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Conclusions and Future Aspects

Advances in Chemical and Materials Engineering - Properties, Techniques, and Applications of Polyaniline (PANI) Thin Films ◽

10.4018/978-1-5225-9896-1.ch008 ◽

2020 ◽

pp. 216-222

Keyword(s):

Thin Film ◽

Thin Films ◽

Drug Delivery ◽

Solar Cell ◽

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Physiochemical Properties ◽

Light Emitting ◽

The Common

Polyaniline (PANI) is one of the common and extensively explored conducting polymers due to its excellent electrochemical and electrical properties. PANI thin film is an emerging area of research owing to its various applications in the field of solar cell technologies, drug delivery, organic light emitting diodes, field-effect transistors, sensors, electrochromic displays, etc. This chapter is devoted to the conclusions and future aspects of the undertaken studies in this book. This book has eight chapters that comprise the discussion of synthesis, deposition and characterization techniques, physiochemical properties, and applications of PANI thin films.

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Copper (II) Phthalocyanine Based Field Effect Transistors as Total Dose Sensors for Determining Ionizing Radiation Dose

MRS Proceedings ◽

10.1557/opl.2012.185 ◽

2012 ◽

Vol 1383 ◽

Author(s):

Harshil N. Raval ◽

V. Ramgopal Rao

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Radiation Dose ◽

Ionizing Radiation ◽

Total Dose ◽

Field Effect ◽

Field Effect Transistors ◽

Electronic Devices ◽

Organic Electronic Devices ◽

Organic Electronic

ABSTRACTChanges in the material properties of copper (II) phthalocyanine (CuPc) thin-films were studied upon exposure to increasing dose of ionizing radiation using photoluminescence spectrum. We observe generation of new energy states below the band gap upon exposure to ionizing radiation. Organic electronic devices – CuPc based resistor and an organic field effect transistor (OFET) – are proposed in this work as total dose sensors for ionizing radiation. We observe an increase in the conductivity of CuPc thin-films with increasing dose of ionizing radiation. To overcome the possibility of changes/degradation in the electrical properties of CuPc thin-films upon interaction with various gases and moisture in the environment, a passivation layer of silicon nitride, deposited by hot-wire CVD process is proposed. Effect of ionizing radiation on the electrical properties of thin-films of CuPc has been studied. We observe a 170% increase in the resistance of the thin-film for a total of 50 Gy radiation dose using Cobalt-60 (60Co) radiation source. Moreover, significant changes in the electrical characteristics of an OFET, with CuPc as an organic semiconductor, have been observed with increasing doses of ionizing radiation. Experiments with an OFET (W/L = 19350 μm / 100 μm and tox = 150 nm) as a sensor resulted in a ∼100X change in the OFF current for a total of 50 Gy dose of ionizing radiation exhibiting a sensitivity of ∼1 nA/Gy. Moreover, implementing a reader circuit, shift in the threshold voltage of the OFET at 1e-7 A drain current displayed a sensitivity of 80 mV/Gy for a total of 50 Gy dose of ionizing radiation. CuPc based organic electronic devices have advantages as sensors because of their low-cost fabrication, large area coverage on flexible substrates, etc.

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