scholarly journals Dielectric Properties of Rhombohedral PbNb2O6

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Kriti Ranjan Sahu ◽  
Udayan De
Keyword(s):  
Activation Energy ◽  
Relaxation Time ◽  
High Temperature ◽  
Single Phase ◽  
Rhombohedral Phase ◽  
Orthorhombic Phase ◽  
Dielectric Materials ◽  
Rietveld Analysis ◽  
Bulk Resistance ◽  
Relaxation Time Constant

Dielectric materials are needed in many electrical and electronic applications. So, basic characterizations need to be done for all dielectrics. PbNb2O6 (PN) is ferroelectric and piezoelectric only in its orthorhombic phase, with potential high temperature applications. So, its rhombohedral phase, frequently formed as an undesirable impurity in the preparation of orthorhombic PN, has been ignored with respect to possible dielectric characterizations. Here, essentially single phase rhombohedral PN has been prepared, checking structure from XRD Rietveld Analysis, and the real and imaginary parts of permittivity measured in an Impedance Spectrometer (IS) up to ~700∘C and over 20 Hz to 5.5 MHz range, for heating and some cooling runs. Variations, with temperature, of relaxation time constant (τ), AC and DC conductivity, bulk resistance, activation energy and capacitance have been explored from our IS data.

Erbium boride composites with high ZT values at 800 K

2013 ◽  
Vol 1490 ◽  
pp. 41-44
Author(s):  
Frederick C. Stober ◽  
Barbara R. Albert
Keyword(s):  
High Temperature ◽  
Energy Conversion ◽  
Single Phase ◽  
Rietveld Analysis ◽  
Molar Ratio ◽  
Refractory Materials ◽  
Solid Reaction ◽  
Seebeck Coefficients ◽  
Electrical Conductivities ◽  
Multi Phase

ABSTRACTSingle phase erbium borides ErB2, ErB4, and ErB12 show Seebeck coefficients and power factors with absolute values that are significantly lower than those of a stable Er-B multi phase composite obtained through high temperature solid-solid reaction from the elements (molar ratio Er:B = 1:6). According to quantitative Rietveld analysis the composite consists of erbium diboride (1 %), tetraboride (83 %), and dodecaboride (16 %), and the measurement of the electrical conductivities, Seebeck coefficients, and thermal conductivities leads to ZT values as high as 0.53 at 830 K. Such refractory materials can be used for energy conversion in a range of high temperatures that are otherwise difficult to address.

Stress-Time-Temperature Relations in Polysulfide Rubbers

1946 ◽  
Vol 19 (4) ◽  
pp. 1178-1192 ◽  
Author(s):  
M. D. Stern ◽  
A. V. Tobolsky
Keyword(s):  
Activation Energy ◽  
Relaxation Time ◽  
High Temperature ◽  
Stress Relaxation ◽  
Relaxation Process ◽  
Network Structure ◽  
Constant Load ◽  
Internal Structures ◽  
Relaxation Measurements ◽  
Temperature Relaxation

Abstract Polysulfide rubbers of various internal structures have been investigated by measurements of continuous and intermittent relaxation of stress and by creep under constant load at temperatures between 35° C and 120° C. Continuous stress relaxation measurements indicate that these rubbers obey approximately the simple Maxwellian law of relaxation of stress, which indicates that one definite type of bond in the network structure is responsible for stress decay. The activation energy for the relaxation process in each of the polysulfide rubbers is nearly the same, indicating that the same type of bond is responsible for the relaxation behavior of all the polysulfides investigated. In contrast to hydrocarbon rubbers, oxygen is not the cause of high temperature relaxation in polysulfide rubbers, nor does heating in air at moderate temperatures for times comparable to the relaxation time produce changes in physical properties as determined by modulus or by appearance of the samples. Several possibilities regarding the mechanism of the relaxation process and the type of bond involved are considered in the light of the experimental results.

scholarly journals Estudio fundamental del sistema ZrO₂-WOx

2002 ◽  
Author(s):  
◽  
Cortes Jacome María Antonia
Keyword(s):  
High Temperature ◽  
Tungsten Oxide ◽  
Amorphous Material ◽  
Orthorhombic Phase ◽  
Rietveld Analysis ◽  
Synthesis Temperature ◽  
Crystallite Surface ◽  
Highly Dispersed ◽  
Tungsten Species ◽  
Ft Ir

In this study, a series of ZrO2-WOx samples was prepared by the following methods: i) Precipitation with impregnation, ii) Coprecipitation and iii) Hydrothermal. The amorphous material obtained by coprecipitation method crystallized into tetragonal phase of ZrO2 when calcined at high temperature. This structure remains as a sole phase until 700oC, indicating high interaction between zirconia and tungsten oxide phases. However, the Rietveld analysis of XRD spectrum showed the presence of two tetragonal phases (T1 and T2). The difference between these phases was the oxygen position along the c axis. In T2 phase a flat crystallite surface perpendicular to the c axis was observed, while in T1 phase this crystallite surface was a rough. When the samples were annealed at high temperature (700 and 800oC), the highly dispersed tungsten species present in the T2 phase were segregated, forming the WO3 orthorhombic phase. The as-synthesized zirconia samples prepared by hydrothermal method were crystalline at temperatures as low as 145ºC. When tungsten was added to the synthesis mixture only an amorphous phase of t-ZrO2 was detected In this way a microcrystalline ZrO2-WOx of 309 m2g-1 was prepared. The material becomes progressively more crystalline with increasing synthesis temperature. At 225 oC a well a well-crystallized material was obtained (79% of t-ZrO2 and 21% of m-ZrO2 ). The crystallite sizes of both phases were not too different (17.5 and 14.5 nm for t-ZrO2 and 11.5 for m-ZrO2). In all the samples, crystalline phase associated to WOx species were not identified by XRD. FT-IR spectroscopy of W-promoted zirconia showed a band at 943cm-1 which was attributed to the W=O stretching mode of octahedrally coordinated tungsten species. The WOx species must be highly dispersed and strongly bound to the ZrO2 surface. Post-synthesis calcination treatment at higher temperatures (560, 700 and 800ºC) brought about sintering of these dispersed tungsten species and formation of a more bulky tungsten oxide species identified by two FT-IR vibration bands at 970 and 1100cm-1. Considering the decrease of surface area, the calcination process brings about an increase in the density of tungsten species by unit area. At these higher annealed temperatures, FT-IR of adsorbed pyridine showed that these bulky tungsten species favored the Brønsted acidity formation on ZrO2-WOx materials which increases the catalytc activity for the isomerization of n-hexane.

scholarly journals Dielectric Properties of PbNb2O6 up to 700°C from Impedance Spectroscopy

2013 ◽  
Vol 2013 ◽  
pp. 1-15 ◽  
Author(s):  
Kriti Ranjan Sahu ◽  
Udayan De
Keyword(s):  
Impedance Spectroscopy ◽  
Curie Temperature ◽  
Piezoelectric Materials ◽  
Rhombohedral Phase ◽  
Orthorhombic Phase ◽  
Wide Band ◽  
Rietveld Analysis ◽  
Activation Energies ◽  
Complete Analysis ◽  
Dc Conductivities

Piezoelectric materials have wide band gap and no inversion symmetry. Only the orthorhombic phase of lead metaniobate (PbNb2O6) can be ferroelectric and piezoelectric below Curie temperature, but not the rhombohedral phase. High temperature piezoelectric applications in current decades have revived international interest in orthorhombic PbNb2O6, synthesis of which in pure form is difficult and not well documented. Second problem is that its impedance spectroscopy (IS) data analysis is still incomplete. Present work attempts to fill up these two gaps. Presently found synthesis parameters yield purely orthorhombic PbNb2O6, as checked by X-ray Rietveld analysis and TEM. Present 20 Hz to 5.5 MHz IS from room temperature to 700°C shows its ferroelectric Curie temperature to be one of the highest reported, >574°C for 0.5 kHz and >580°C for 5.5 MHz. Dielectric characteristics and electrical properties (like capacitance, resistance and relaxation time of the equivalent CR circuit, AC and DC conductivities, and related activation energies), as derived here from a complete analysis of the IS data, are more extensive than what has yet been reported in the literature. All the properties show sharp changes across the Curie temperature. The temperature dependence of activation energies corresponding to AC and DC conductivities has been reexamined.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

COPPER ALLOY No. 230

Alloy Digest ◽  
1972 ◽  
Vol 21 (3) ◽  
Keyword(s):  
Fracture Toughness ◽  
Corrosion Resistance ◽  
Shear Strength ◽  
High Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Copper Alloy ◽  
Single Phase ◽  
Heat Treating ◽  
Temperature Performance

Abstract COPPER ALLOY No. 230 is a single-phase brass containing 15% zinc which is the most widely used of the low zinc brasses. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and shear strength as well as fracture toughness and creep. It also includes information on low and high temperature performance, and corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Cu-252. Producer or source: Brass mills.

scholarly journals Fabrication and Characterization of Quinary High Entropy-Ultra-High Temperature Diborides

Ceramics ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 108-120
Author(s):  
Simone Barbarossa ◽  
Roberto Orrù ◽  
Valeria Cannillo ◽  
Antonio Iacomini ◽  
Sebastiano Garroni ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Phase ◽  
Nominal Composition ◽  
High Entropy ◽  
Chemical Complexity ◽  
Alternative Processing ◽  
Plasma Sintering ◽  
High Temperature Synthesis ◽  
Spark Plasma

Due to their inherent chemical complexity and their refractory nature, the obtainment of highly dense and single-phase high entropy (HE) diborides represents a very hard target to achieve. In this framework, homogeneous (Hf0.2Nb0.2Ta0.2Mo0.2Ti0.2)B2, (Hf0.2Zr0.2Ta0.2Mo0.2Ti0.2)B2, and (Hf0.2Zr0.2Nb0.2Mo0.2Ti0.2)B2 ceramics with high relative densities (97.4, 96.5, and 98.2%, respectively) were successfully produced by spark plasma sintering (SPS) using powders prepared by self-propagating high-temperature synthesis (SHS). Although the latter technique did not lead to the complete conversion of initial precursors into the prescribed HE phases, such a goal was fully reached after SPS (1950 °C/20 min/20 MPa). The three HE products showed similar and, in some cases, even better mechanical properties compared to ceramics with the same nominal composition attained using alternative processing methods. Superior Vickers hardness and elastic modulus values were found for the (Hf0.2Nb0.2Ta0.2Mo0.2Ti0.2)B2 and the (Hf0.2Zr0.2Ta0.2Mo0.2Ti0.2)B2 systems, i.e., 28.1 GPa/538.5 GPa and 28.08 GPa/498.1 GPa, respectively, in spite of the correspondingly higher residual porosities (1.2 and 2.2 vol.%, respectively). In contrast, the third ceramic, not containing tantalum, displayed lower values of these two properties (25.1 GPa/404.5 GPa). However, the corresponding fracture toughness (8.84 MPa m1/2) was relatively higher. This fact can be likely ascribed to the smaller residual porosity (0.3 vol.%) of the sintered material.

Single-phase (Hf-Mo-Nb-Ta-Ti)C high-entropy ceramic: A potential high temperature anti-wear material

2021 ◽  
Vol 157 ◽  
pp. 106883
Author(s):  
Qichun Sun ◽  
Hui Tan ◽  
Shengyu Zhu ◽  
Zongxiao Zhu ◽  
Long Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Phase ◽  
High Entropy
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