scholarly journals CdTeO3Deposited Mesoporous NiO Photocathode for a Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Chuan Zhao ◽  
Xiaoping Zou ◽  
Sheng He
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Silar Method ◽  
Layer Adsorption ◽  
P Type ◽  
Nio Films ◽  
Ionic Layer

Semiconductor sensitized NiO photocathodes have been fabricated by successive ionic layer adsorption and reaction (SILAR) method depositing CdTeO3quantum dots onto mesoscopic NiO films. A solar cell using CdTeO3deposited NiO mesoporous photocathode has been fabricated. It yields a photovoltage of 103.7 mV and a short-circuit current density of 0.364 mA/cm2. The incident photon to current conversion efficiency (IPCE) value is found to be 12% for the newly designed NiO/CdTeO3solar cell. It shows that the p-type NiO/CdTeO3structure could be successfully utilized to fabricate p-type solar cell.

Deposition Voltage Research of CdSe Quantum Dots Sensitized TiO2 Solar Cell

2015 ◽  
Vol 1118 ◽  
pp. 182-185
Author(s):  
Liu Ying Zhao ◽  
Fu Fang Zhou ◽  
Peng Hu ◽  
Song Jie Han ◽  
Ping Wang
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Semiconductor Film ◽  
Cdse Quantum Dots ◽  
Deposition Voltage ◽  
Nanocrystalline Semiconductor

TiO2nanocrystalline semiconductor film was made on the titanium (Ti) substrate by hydrothermal method,and then prepared the CdSe quantum dot layer on the face of the TiO2nanocrystalline semiconductor film by electrochemical deposition method. We studied the affect of deposition voltage of the CdSe quantum dots’ growth, finding that when the deposition voltage was-1.3V,CdSe quantum dots grown best.However, In terms of CdSe/TiO2as the light-anode,using electricity chemistry workstation to test,We gain a solar cell with Short circuit current density of 1.45×10-3A·cm-2and the open circuit voltage of 0.24 V.

scholarly journals Doped Heterojunction Used in Quantum Dot Sensitized Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Yanyan Gao ◽  
Xiaoping Zou ◽  
Zongbo Huang
Keyword(s):  
Quantum Dot ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Silar Method ◽  
Foreign Atom ◽  
Layer Adsorption ◽  
Lattice Distortions ◽  
Sensitized Solar Cells

Incorporated foreign atoms into the quantum dots (QDs) used in heterojunction have always been a challenge for solar energy conversion. A foreign atom indium atom was incorporated into PbS/CdS QDs to prepare In-PbS/In-CdS heterojunction by successive ionic layer adsorption and reaction method which is a chemical method. Experimental results indicate that PbS or CdS has been doped with In by SILAR method; the concentration of PbS and CdS which was doped In atoms has no significantly increase or decrease. In addition, incorporating of Indium atoms has resulted in the lattice distortions or changes of PbS or CdS and improved the light harvest of heterojunction. Using this heterojunction, Pt counter electrode and polysulfide electrolyte, to fabricate quantum dot sensitized solar cells, the short circuit current density ballooned to 27.01 mA/cm2from 13.61 mA/cm2and the open circuit voltage was improved to 0.43 V from 0.37 V at the same time.

scholarly journals Analysis of Back Surface Field (BSF) Performance in P-Type And N-Type Monocrystalline Silicon Wafer

2018 ◽  
Vol 43 ◽  
pp. 01006 ◽  
Author(s):  
Ferdiansjah ◽  
Faridah ◽  
Kelvian Tirtakusuma Mularso
Keyword(s):  
Solar Cell ◽  
Doping Level ◽  
Short Circuit ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Solar Cell Performance ◽  
P Type

Back Surface Field (BSF) has been used as one of means to enhance solar cell performance by reducing surface recombination velocity (SRV). One of methods to produce BSF is by introducing highly doped layer on rear surface of the wafer. Depending on the type of the dopant in wafer, the BSF layer could be either p+ or n+. This research aims to compare the performance of BSF layer both in p-type and n-type wafer in order to understand the effect of BSF on both wafer types. Monociystalline silicon wafer with thickness of 300 μm. area of 1 cm2, bulk doping level NB = 1.5×1016/cm3 both for p-type wafer and n-type wafer are used. Both wafer then converted into solar cell by adding emitter layer with concentration NE =7.5×1018/cm3 both for p-type wafer and n-type wafer. Doping profile that is used for emitter layer is following complementary error function (erfc) distribution profile. BSF concentration is varied from 1×1017/cm3 to 1×1020/cm3 for each of the cell. Solar cell performance is tested under standard condition, with AM1.5G spectrum at 1000 W/m2. Its output is measured based on its open circuit voltage (Voc). short circuit current density (JSC), efficiency (η). and fill factor (FF). The result shows that the value of VOC is relatively constant along the range of BSF concentration, which is 0.694 V – 0.702 V. The same pattern is also observed in FF value which is between 0.828 – 0.831. On the other hand, value of JSC and efficiency will drop against the increase of BSF concentration. Highest JSC which is 0.033 A/cm2 and highest efficiency which is 18.6% is achieved when BSF concentration is slightly higher than bulk doping level. The best efficiency can be produced when BSF concentration is around 1×1017cm-3.. This result confirms that surface recombination velocity has been reduced due to the increase in cell’s short circuit current density and its efficiency. In general both p-type and n-type wafer will produce higher efficiency when BSF is applied. However, the increase is larger in p-type wafer than in n-type wafer. Better performance for solar cell is achieved when BSF concentration is slightly higher that bulk doping level because at very high BSF concentration the cell’s efficiency will be decreased.

Nanocoral PbS Films Schottky Solar Cell

2014 ◽  
Vol 925 ◽  
pp. 605-609 ◽  
Author(s):  
A.S. Obaid ◽  
Alaa Ahmed Dihe ◽  
B.M. Salih ◽  
Z. Hassan ◽  
Y. Al-Douri ◽  
...  
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Cross Sectional ◽  
Thermal Evaporator ◽  
P Type

This study reports on the fabrication of a Schottky solar cell with a cross-sectional schematic: ITO/PbS/Al with a commercial transparent conductive ITO and a p-type PbS absorber layer deposited by using a thermal evaporator. The structural and optical properties of constituent films are presented. X-ray diffraction showed that the thin films are polycrystalline. By using scanning electron microscopy, this study showed that the films possessed a uniform surface morphology over the substrate, and the films exhibit a nanocoral structure. Open circuit voltage,short-circuit current density and characteristics were studied under 30 mW/cm2 solar radiation.

scholarly journals Photovoltaic and Impedance Properties of Hierarchical TiO2Nanowire Based Quantum Dot Sensitized Solar Cell

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Amanullah Fatehmulla ◽  
M. Aslam Manthrammel ◽  
W. A. Farooq ◽  
Syed Mansoor Ali ◽  
M. Atif
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Series Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Cds Quantum Dots ◽  
Silar Method ◽  
Cds Qds ◽  
The Individual

Growth and characterization of TiO2nanowire (NW) assemblies on FTO glass using a typical hydrothermal synthesis have been reported. CdS quantum dots (QDs) have been deposited on TiO2nanowires by successive ion layer adsorption and reaction (SILAR) method. FESEM image exhibits the flower-like hierarchical TiO2bunch of nanowires. HRTEM image confirms the size of CdS QDs between 5 and 6 nm. XRD and absorption studies revealed proper growth of CdS quantum dots on TiO2nanowires. At AM 1.5 illumination intensity, the solar cell, with the configuration FTO/TiO2-NW/CdS-QDs/Pt-FTO, displays a short circuit current (Jsc) of 1.295 mA and an open circuit voltage (Voc) of 0.38 V. TheVocandJscshowed linear behavior at higher illumination intensities. The peak in power-voltage characteristics at various illuminations showed a shift towards higherVocvalues. Capacitance-voltage (C-V), conductance-voltage (G-V), and series resistance-voltage (Rs-V) measurements of the cell in the frequency ranging from 5 kHz to 5 MHz showed decreasing trend of capacitance with increase of frequency whereas increase in conductance and decrease in resistance have been noticed with increase of frequency. All the results including the individual behavior of the plots of capacitance, conductance, and series resistance as a function of bias voltage have been discussed.

scholarly journals Optimization of Electrical Performance of Defected n+-p-p+ Solar Cell with CdS/BaSi2/Cu2O Heterostructure Using SCAPs 1D

2022 ◽  
Author(s):  
Zohaib Ali ◽  
Khuram Ali
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Electrical Performance ◽  
Maximum Efficiency ◽  
Photovoltaic Devices ◽  
Layer Width ◽  
P Type

Abstract Present study investigates the performance of BaSi2 based BSF structure solar cell. SCAPS 1D simulator has been employed to investigate the heterostructure solar cell. To decrease the recombination loss due to minority carrier, a new configuration is proposed by inclusion of the p-type cuprous oxide (Cu2O) as BSF layer. The Cu2O BSF layer width varying in range 0.1 to 0.4 µm to analyze the feasibility of device for optimum performance. The anticipated structure consists of ZnO/CdS/BaSi2/Cu2O layers and offers the maximum efficiency of above 24%. Parameters for example open circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), conversion efficiency (η) and quantum efficiency (QE) of the device have been analyzed graphically. The optimized structure may have significant impact on future development of advanced photovoltaic devices.

High short-circuit current density in a non-toxic Bi2S3 Quantum dot sensitized solar cell

2021 ◽  
pp. 100783
Author(s):  
Christopher Rosiles-Perez ◽  
Sirak Sidhik ◽  
Luis Ixtilico-Cortés ◽  
Fernando Robles-Montes ◽  
Tzarara López-Luke ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

scholarly journals Over 30% efficiency bifacial 4-terminal perovskite-heterojunction silicon tandem solar cells with spectral albedo

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sangho Kim ◽  
Thanh Thuy Trinh ◽  
Jinjoo Park ◽  
Duy Phong Pham ◽  
Sunhwa Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Solar Spectrum ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Production Costs ◽  
White Sand ◽  
Reflected Light

AbstractWe developed and designed a bifacial four-terminal perovskite (PVK)/crystalline silicon (c-Si) heterojunction (HJ) tandem solar cell configuration albedo reflection in which the c-Si HJ bottom sub-cell absorbs the solar spectrum from both the front and rear sides (reflected light from the background such as green grass, white sand, red brick, roofing shingle, snow, etc.). Using the albedo reflection and the subsequent short-circuit current density, the conversion efficiency of the PVK-filtered c-Si HJ bottom sub-cell was improved regardless of the PVK top sub-cell properties. This approach achieved a conversion efficiency exceeding 30%, which is higher than those of both the top and bottom sub-cells. Notably, this efficiency is also greater than the Schockley–Quiesser limit of the c-Si solar cell (approximately 29.43%). The proposed approach has the potential to lower industrial solar cell production costs in the near future.

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

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