scholarly journals Photovoltaic and Impedance Properties of Hierarchical TiO2Nanowire Based Quantum Dot Sensitized Solar Cell

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Amanullah Fatehmulla ◽  
M. Aslam Manthrammel ◽  
W. A. Farooq ◽  
Syed Mansoor Ali ◽  
M. Atif
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Series Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Cds Quantum Dots ◽  
Silar Method ◽  
Cds Qds ◽  
The Individual

Growth and characterization of TiO2nanowire (NW) assemblies on FTO glass using a typical hydrothermal synthesis have been reported. CdS quantum dots (QDs) have been deposited on TiO2nanowires by successive ion layer adsorption and reaction (SILAR) method. FESEM image exhibits the flower-like hierarchical TiO2bunch of nanowires. HRTEM image confirms the size of CdS QDs between 5 and 6 nm. XRD and absorption studies revealed proper growth of CdS quantum dots on TiO2nanowires. At AM 1.5 illumination intensity, the solar cell, with the configuration FTO/TiO2-NW/CdS-QDs/Pt-FTO, displays a short circuit current (Jsc) of 1.295 mA and an open circuit voltage (Voc) of 0.38 V. TheVocandJscshowed linear behavior at higher illumination intensities. The peak in power-voltage characteristics at various illuminations showed a shift towards higherVocvalues. Capacitance-voltage (C-V), conductance-voltage (G-V), and series resistance-voltage (Rs-V) measurements of the cell in the frequency ranging from 5 kHz to 5 MHz showed decreasing trend of capacitance with increase of frequency whereas increase in conductance and decrease in resistance have been noticed with increase of frequency. All the results including the individual behavior of the plots of capacitance, conductance, and series resistance as a function of bias voltage have been discussed.

Deposition Voltage Research of CdSe Quantum Dots Sensitized TiO2 Solar Cell

2015 ◽  
Vol 1118 ◽  
pp. 182-185
Author(s):  
Liu Ying Zhao ◽  
Fu Fang Zhou ◽  
Peng Hu ◽  
Song Jie Han ◽  
Ping Wang
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Semiconductor Film ◽  
Cdse Quantum Dots ◽  
Deposition Voltage ◽  
Nanocrystalline Semiconductor

TiO2nanocrystalline semiconductor film was made on the titanium (Ti) substrate by hydrothermal method,and then prepared the CdSe quantum dot layer on the face of the TiO2nanocrystalline semiconductor film by electrochemical deposition method. We studied the affect of deposition voltage of the CdSe quantum dots’ growth, finding that when the deposition voltage was-1.3V,CdSe quantum dots grown best.However, In terms of CdSe/TiO2as the light-anode,using electricity chemistry workstation to test,We gain a solar cell with Short circuit current density of 1.45×10-3A·cm-2and the open circuit voltage of 0.24 V.

Effects of Temperature on I-V Characteristics of InAs/GaAs Quantum-Dot Solar Cells

2015 ◽  
Vol 1103 ◽  
pp. 129-135 ◽  
Author(s):  
Saichon Sriphan ◽  
Suwit Kiravittaya ◽  
Supachok Thainoi ◽  
Somsak Panyakaew
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Quantum Dot ◽  
Series Resistance ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Substantial Improvement ◽  
Open Circuit ◽  
Gaas Quantum Dot

The current-voltage (I-V) characteristics of quantum-dot (QD) solar cells under illumination at various temperatures are presented. Stacked of high-density self-assembled InAs/GaAs QDs were incorporated into the Schottky-barrier-type solar cell structure. The I-V characteristics reveal that both short-circuit current and open-circuit voltage of the QD solar cell reduce when the measurement temperature increases. This result is unexpected and inconsistent with a basic solar cell theory where the temperature is believed to cause the enhancement of the short-circuit current. By considering the solar-cell circuit model, we can explain the obtained I-V curves by a high series resistance of the cell structure. Theoretical exclusion of the series resistance shows a substantial improvement of solar cell fill factor and efficiency. This work therefore suggests that reduction of series resistance by properly doping of the epitaxial layers can improve these devices.

scholarly journals Enhanced Performance of DSSCs Based on the Insertion Energy Level of CdS Quantum Dots

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Xiaoping Zou ◽  
Zhe Sun
Keyword(s):  
Quantum Dots ◽  
Short Circuit ◽  
Energy Levels ◽  
Dye Sensitized Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Cds Quantum Dots ◽  
Visible Absorption ◽  
The Times

Cadmium sulfide (CdS) quantum dots (QDs) are assembled onto the TiO2films by chemical bath deposition method (CBD). And the QDs size is controlled by the times of CBD cycles. They are characterized by UV-visible absorption. To avoid the photo corrosion and electrolyte corrosion, CdS and N719 are sequentially assembled onto the nanocrystalline TiO2films to prepare a CdS/N719 cosensitized photo electrode for the dye-sensitized solar cells. In the structure of TiO2/CdS/N719 electrode, the reorganization of energy levels between CdS and N719 forms a stepwise structure of band-edge levels which is advantageous to the electron injection and hole recovery of CdS and N719 QDs. The open circuit voltage (Voc), short circuit current density (Jsc), and efficiency are increased.

scholarly journals CdTeO3Deposited Mesoporous NiO Photocathode for a Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Chuan Zhao ◽  
Xiaoping Zou ◽  
Sheng He
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Silar Method ◽  
Layer Adsorption ◽  
P Type ◽  
Nio Films ◽  
Ionic Layer

Semiconductor sensitized NiO photocathodes have been fabricated by successive ionic layer adsorption and reaction (SILAR) method depositing CdTeO3quantum dots onto mesoscopic NiO films. A solar cell using CdTeO3deposited NiO mesoporous photocathode has been fabricated. It yields a photovoltage of 103.7 mV and a short-circuit current density of 0.364 mA/cm2. The incident photon to current conversion efficiency (IPCE) value is found to be 12% for the newly designed NiO/CdTeO3solar cell. It shows that the p-type NiO/CdTeO3structure could be successfully utilized to fabricate p-type solar cell.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

An Improved Triple-Tandem Organic Solar Cell

2009 ◽  
Vol 1212 ◽  
Author(s):  
Dewei Zhao ◽  
Xiao Wei Sun ◽  
Lin Ke ◽  
Swee Tiam Tan
Keyword(s):  
Solar Cell ◽  
Small Molecule ◽  
Organic Solar Cells ◽  
Organic Solar Cell ◽  
Copper Phthalocyanine ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Solar Irradiation ◽  
The Third

AbstractWe present an efficient polymer-small molecule triple-tandem organic solar cell (OSC), consisting of poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 (PCBM) bulk heterojunction as the first and second cells, and small molecules copper phthalocyanine (CuPc) and fullerene (C60) as the third cell on top. These sub-cells are connected by an intermediate layer of Al(1 nm)/MoO3(15 nm), which appears to be highly transparent, structurally smooth, and electrically functional. Compared to our previous all polymer triple-tandem organic solar cells (2.03%), this polymer-small molecule triple-tandem organic solar cell achieves an improved power conversion efficiency of 2.18% with a short-circuit current density (Jsc) = 3.02 mA/cm2, open-circuit voltage (Voc) = 1.51 V, and fill factor (FF) = 47.7% under simulated solar irradiation of 100 mW/cm2 (AM1.5G), which can be attributed to the increased photocurrent generation in the third cell since the third cell has the complementary absorption with two bottom cells despite a slightly reduced Voc.

Study of Photoelectrochemical Solar Cell Using WSe2 Crystal

2013 ◽  
Vol 665 ◽  
pp. 330-335 ◽  
Author(s):  
Ripal Parmar ◽  
Dipak Sahay ◽  
R.J. Pathak ◽  
R.K. Shah
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Electrical Energy ◽  
Open Circuit ◽  
Cell Parameters ◽  
Photoelectrochemical Solar Cell ◽  
Photoelectrochemical Solar Cells

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.

scholarly journals Simulation of a perovskite sandwich solar cell with the p-CZTS / p-CH3NH3PbCI3 / p-CZTS absorber layers

2021 ◽  
Vol 877 (1) ◽  
pp. 012001
Author(s):  
Marwah S Mahmood ◽  
N K Hassan
Keyword(s):  
Solar Cell ◽  
Conversion Efficiency ◽  
Current Density ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Current Voltage ◽  
Cell Capacitance

Abstract Perovskite solar cells attract the attention because of their unique properties in photovoltaic cells. Numerical simulation to the structure of Perovskite on p-CZTS/p-CH3NH3PbCI3/p-CZTS absorber layers is performed by using a program solar cell capacitance simulator (SCAPS-1D), with changing absorber layer thickness. The effect of thickness p-CZTS/p-CH3NH3PbCI3/p-CZTS, layers at (3.2μm, 1.8 μm, 1.1 μm) respectively are studied. The obtained results are short circuit current density (Jsc ), open circuit voltage (V oc), fill factor (F. F) and power conversion efficiency (PCE) equal to (28 mA/cm2, 0.83 v, 60.58 % and 14.25 %) respectively at 1.1 μm thickness. Our findings revealed that the dependence of current - voltage characteristics on the thickness of the absorbing layers, an increase in the amount of short circuit current density with an increase in the thickness of the absorption layers and thus led to an increase in the conversion efficiency and improvement of the cell by increasing the thickness of the absorption layers.

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