scholarly journals The Influence of Hydrogen on the Properties of Zinc Sulfide Thin Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-6
Author(s):  
Hang Xu ◽  
Lili Wu ◽  
Wenwu Wang ◽  
Lixiang Zhang ◽  
Jingquan Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Crystallite Size ◽  
Zinc Sulfide ◽  
Stoichiometric Composition ◽  
Band Gaps ◽  
Optical And Electrical Properties ◽  
Radio Frequency Magnetron Sputtering

Zinc sulfide thin films have been deposited with hydrogen in Ar and Ar+H2atmosphere by radio frequency magnetron sputtering. The thickness, structural properties, composition, surface morphology, and optical and electrical properties of the films have been investigated. Effect of hydrogen on the properties of the film was studied. The results showed that hydrogen leads to better crystallinity and larger crystallite size of ZnS polycrystalline films. The band gaps of the films in Ar+H2are about 3.48 eV compared with 3.24 eV without hydrogen. It is also demonstrated that hydrogen can result in a better stoichiometric composition of the films.

RF Magnetron Sputtering Processed Transparent Conductive Aluminum Doped ZnO thin Films with Excellent Optical and Electrical Properties

2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Band Model ◽  
Deposition Condition ◽  
Optical And Electrical Properties ◽  
Doped Zno

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.

Structural, Optical and Electrical Properties of Chromium Thin Films Prepared by Magnetron Sputtering

2012 ◽  
Vol 41 (8) ◽  
pp. 922-926 ◽  
Author(s):  
林建平 LIN Jian-ping ◽  
林丽梅 LIN Li-mei ◽  
关贵清 GUAN Gui-qing ◽  
吴扬微 WU Yang-wei ◽  
赖发春 LAI Fa-chun
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Optical And Electrical Properties
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