scholarly journals Effect of MgO and V2O5 Catalyst on the Sensing Behaviour of Tin Oxide Thin Film for SO2 Gas

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Punit Tyagi ◽  
Anjali Sharma ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
High Selectivity ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Rf Sputtering ◽  
Oxide Thin Film ◽  
Gas Sensing Properties ◽  
Uv Visible ◽  
V2o5 Catalyst ◽  
Microstructural Studies

The present work shows the SO2 gas sensing property of SnO2 thin film based sensor prepared by using RF sputtering technique. Different catalysts (MgO and V2O5) in form of nanoclusters having diameter of 600 μm have been loaded on SnO2 surface to detect SO2 gas. The sensing response of all these films towards SO2 is monitored. Microstructural studies have been carried out using XRD and UV-Visible Spectrophotometer and a good correlation has been found between the microstructural and gas sensing properties of these deposited samples. Both catalysts when incorporated with SnO2 film show high selectivity towards SO2 gas at lower operating temperature. MgO gives a sensitivity of 317% at an operating temperature of 280°C towards 500 ppm of SO2 gas whereas V2O5 catalyst gives a sensitivity of 166% at 280°C for the same amount of gas.

Evaluation of depletion layer width and gas-sensing properties of antimony-doped tin oxide thin film sensors

2015 ◽  
Vol 220 ◽  
pp. 1354-1360 ◽  
Author(s):  
Jianqiao Liu ◽  
Xuesong Liu ◽  
Zhaoxia Zhai ◽  
Guohua Jin ◽  
Qiuxuan Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Gas Sensing ◽  
Depletion Layer ◽  
Oxide Thin Film ◽  
Layer Width ◽  
Sensing Properties ◽  
Depletion Layer Width ◽  
Thin Film Sensors ◽  
Gas Sensing Properties

Gas Sensing Properties of Indium Oxide Thin Film on Silicon Substrate Prepared by Spin-Coating Method

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4994-4998 ◽  
Author(s):  
Wan-Young Chung ◽  
Go Sakai ◽  
Kengo Shimanoe ◽  
Norio Miura ◽  
Duk-Dong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Silicon Substrate ◽  
Spin Coating ◽  
Gas Sensing ◽  
Oxide Thin Film ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
Coating Method ◽  
Indium Oxide Thin Film

Preparation of indium oxide thin film by spin-coating method and its gas-sensing properties

1998 ◽  
Vol 46 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Wan-Young Chung ◽  
Go Sakai ◽  
Kengo Shimanoe ◽  
Norio Miura ◽  
Duk-Dong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Spin Coating ◽  
Gas Sensing ◽  
Oxide Thin Film ◽  
Sensing Properties ◽  
Spin Coating Method ◽  
Gas Sensing Properties ◽  
Coating Method ◽  
Indium Oxide Thin Film

Spin-coated indium oxide thin film on alumina and silicon substrates and their gas sensing properties

2000 ◽  
Vol 65 (1-3) ◽  
pp. 312-315 ◽  
Author(s):  
Wan-Young Chung ◽  
Go Sakai ◽  
Kengo Shimanoe ◽  
Norio Miura ◽  
Duk-Dong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Gas Sensing ◽  
Oxide Thin Film ◽  
Silicon Substrates ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
Indium Oxide Thin Film

scholarly journals Study on the Ozone Gas Sensing Properties of Rf-Sputtered Al-Doped NiO Films

2021 ◽  
Vol 11 (7) ◽  
pp. 3104
Author(s):  
Athanasios Paralikis ◽  
Emmaouil Gagaoudakis ◽  
Viktoras Kampitakis ◽  
Elias Aperathitis ◽  
George Kiriakidis ◽  
...  
Keyword(s):  
Oxygen Content ◽  
Room Temperature ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Rf Sputtering ◽  
Optimum Operating ◽  
Optimum Operating Temperature ◽  
Sensing Properties ◽  
Al Content ◽  
Gas Sensing Properties

Al-doped NiO (NiO:Al) has attracted the interest of researchers due to its excellent optical and electrical properties. In this work, NiO:Al films were deposited on glass substrates by the radio frequencies (rf) sputtering technique at room temperature and they were tested against ozone gas. The Oxygen content in (Ar-O2) plasma was varied from 2% to 4% in order to examine its effect on the gas sensing performance of the films. The thickness of the films was between 160.3 nm and 167.5 nm, while the Al content was found to be between 5.3at% and 6.7at%, depending on the oxygen content in plasma. It was found that NiO:Al films grown with 4% O2 in plasma were able to detect 60 ppb of ozone with a sensitivity of 3.18% at room temperature, while the detection limit was further decreased to 10 ppb, with a sensitivity of 2.54%, at 80 °C, which was the optimum operating temperature for these films. In addition, the films prepared in 4% O2 in plasma had lower response and recovery time compared to those grown with lower O2 content in plasma. Finally, the role of the operating temperature on the gas sensing properties of the NiO:Al films was investigated.

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