scholarly journals Fabrication and Characterization of Highly Oriented N-Doped ZnO Nanorods by Selective Area Epitaxy

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Yang Zhang ◽  
Shulin Gu ◽  
Kun Tang ◽  
Jiandong Ye ◽  
Haixiong Ge ◽  
...  

High-quality nitrogen-doped ZnO nanorods have been selectively grown on patterned and bare ZnO templates by the combination of nanoimprint lithography and chemical vapor transport methods. The grown nanorods exhibited uniformity in size and orientation as well as controllable density and surface-to-volume ratio. The structural and optical properties of ZnO nanorods and the behaviour of N dopants have been investigated by means of the scanning electron microscope, photoluminescence (PL) spectra, and Raman scattering spectra. The additional vibration modes observed in Raman spectra of N-doped ZnO nanorods provided solid evidence of N incorporation in ZnO nanorods. The difference of excitonic emissions from ZnO nanorods with varied density and surface-to-volume ratio suggested the different spatial distribution of intrinsic defects. It was found that the defects giving rise to acceptor-bound exciton (A0X) emission were most likely to distribute in the sidewall surface with nonpolar characteristics, while the donor bound exciton (D0X) emission related defects distributed uniformly in the near top polar surface.

2008 ◽  
Vol 31 (2) ◽  
pp. 237-240 ◽  
Author(s):  
Liping Zhu ◽  
Jiesheng Li ◽  
Zhizhen Ye ◽  
Haiping He ◽  
Xiaojun Chen ◽  
...  

2010 ◽  
Vol 1253 ◽  
Author(s):  
Boqian Yang ◽  
Xiaoyan Peng ◽  
Hongxin Zhang ◽  
Peterxian Feng ◽  
Marc Achermann

AbstractUsing different pressures of nitrogen, N-doped ZnO nanorod arrays of various densities have been synthesized on quartz substrates by pulsed laser deposition techniques. The nanorods grow preferentially perpendicular to the quartz surface. X-ray diffraction patterns revealed some degradation of the crystal structure at elevated nitrogen pressures. High concentrations of nitrogen doping in ZnO nanorods were estimated by X-ray photoelectron spectroscopy. Raman scattering spectra confirmed the wurtzite structure of N-doped ZnO nanorods. A prototype sensor based on the N-doped ZnO nanorod arrays demonstrates a linear dependence of the conductivity with operating temperature and pressure of a test gas pollutant.


2013 ◽  
Vol 858 ◽  
pp. 151-158
Author(s):  
Siti Nor Qurratu Aini Abd Aziz ◽  
Swee Yong Pung ◽  
Zainovia Lockman ◽  
Nur Atiqah Hamzah

Fe-doped zinc oxide nanorods (ZnO NRs) were synthesized by ex-situ doping using spray pyrolysis technique. In this work, the undoped ZnO NRs were pre-synthesized via chemical vapor deposition using Zn powder and oxygen gas at 650 °C. The average length and diameter of the ZnO NRs are 4.1 ± 1.1 μm and 553.1 ± 89.6 nm, respectively. The average aspect ratio and areal density of ZnO NRs is 8.2 ± 2.9 and 6.2 ± 1.1 NRs/um2, respectively. Subsequently, these undoped ZnO NRs were kept in the horizontal tube furnace, whereas the dopant solution (FeCl3) of 0.05 M concentration was kept in the aerosol generator, which was located outside of the furnace. The Fe aerosol was flowed into the reactor when substrate temperature reached 650 °C to achieve ex-situ doping. At this temperature, some of the Fe atoms were driven into the NRs, forming Fe-doped ZnO NRs particularly at their outer layer. The presence of Fe 2p1/2 and Fe 2p3/2 peaks at 722.3 eV and 705.7 eV in XPS analysis indicates that Fe atoms were in the local structure of FeO. The Fe-doped ZnO NRs have poor crystal quality attributed to the low IUV/IVis ratio in room temperature PL analysis.


2008 ◽  
Vol 1144 ◽  
Author(s):  
Tomomasa Satoh ◽  
Yuki Matsuzawa ◽  
Hiroaki Koishikawa ◽  
Takashi Hirate

ABSTRACTA novel inorganic thin-film electroluminescence (TFEL) device exhibiting bright EL emission when driven by a low DC voltage is demonstrated. The DC-TFEL device is based on a composite layer in which aluminum-doped ZnO nanorods are vertically embedded in ZnS:Mn as an EL phosphor. The DC driving voltage is then applied laterally to the composite layer via two side electrodes set 3.5 mm apart. The aluminum-doped ZnO nanorods were synthesized on a glass substrate by low-pressure thermal chemical vapor deposition combined with laser ablation, and the composite layer was formed by electron-beam deposition of ZnS:Mn onto the ZnO nanorods. The thickness of the composite layer was about 160 nm. After electrical modification to breakdown a basal conduction ZnO path, the lateral DC-TFEL device exhibited bright EL emission without avalanche breakdown, achieving a luminance of 747 cd/m2 at 4200 V with a luminous efficiency of 9.2×10−3 lm/W.


2006 ◽  
Vol 45 (10A) ◽  
pp. 7688-7690 ◽  
Author(s):  
Hua-Wei Zhang ◽  
Er-Wei Shi ◽  
Zhi-Zhan Chen ◽  
Xue-Chao Liu ◽  
Bing Xiao

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