p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.

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Realization in Clean Room and Electrical Characterization of P-Type Thin Film Transistor

Microelectronics Education ◽

10.1007/978-94-011-5110-8_24 ◽

1998 ◽

pp. 99-102

Author(s):

O. Bonnaud ◽

D. Guillet ◽

F. Raoult ◽

A. C. Salaun

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Electrical Characterization ◽

Clean Room ◽

P Type

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Thin Film Morphology and GrowthMechanism of Pentacene Thin Film Using Low-Pressure Organic Vapor Deposition

MRS Proceedings ◽

10.1557/proc-769-h6.19 ◽

2003 ◽

Vol 769 ◽

Cited By ~ 1

Author(s):

Seong Deok Ahn ◽

Seung Youl Kang ◽

Yong Eui Lee ◽

Meyoung Ju Joung ◽

Chul Am Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Vapor Deposition ◽

Thin Film Transistor ◽

Low Pressure ◽

Chamber Pressure ◽

Film Morphology ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

Organic Vapor

AbstractWe have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed

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Lanthanum Doping Enabling High Drain Current Modulation in a p-Type Tin Monoxide Thin-Film Transistor

ACS Applied Materials & Interfaces ◽

10.1021/acsami.9b14462 ◽

2019 ◽

Vol 11 (50) ◽

pp. 47025-47036 ◽

Cited By ~ 4

Author(s):

Sungyeon Yim ◽

Taikyu Kim ◽

Baekeun Yoo ◽

Hongwei Xu ◽

Yong Youn ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Drain Current ◽

Lanthanum Doping ◽

Current Modulation ◽

P Type ◽

Tin Monoxide

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P‐194: Late‐News‐Poster: Selenium 4p Orbital Enables High‐Mobility p‐Type Tin Oxyselenide Semiconductor for Thin‐Film Transistor Applications

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.14146 ◽

2020 ◽

Vol 51 (1) ◽

pp. 1394-1396

Author(s):

Taikyu Kim ◽

Jae Kyeong Jeong

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

High Mobility ◽

Late News ◽

P Type

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Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor

Sensors and Actuators B Chemical ◽

10.1016/j.snb.2019.03.046 ◽

2019 ◽

Vol 288 ◽

pp. 625-633 ◽

Cited By ~ 14

Author(s):

Hwan-Seok Jeong ◽

Min-Jae Park ◽

Soo-Hun Kwon ◽

Hyo-Jun Joo ◽

Hyuck-In Kwon

Keyword(s):

Thin Film ◽

Room Temperature ◽

Gas Sensing ◽

Thin Film Transistor ◽

Highly Sensitive ◽

P Type ◽

Sensing Characteristics

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SnS thin films prepared by H2S-free process and its p-type thin film transistor

AIP Advances ◽

10.1063/1.4940931 ◽

2016 ◽

Vol 6 (1) ◽

pp. 015112 ◽

Cited By ~ 6

Author(s):

Fan-Yong Ran ◽

Zewen Xiao ◽

Hidenori Hiramatsu ◽

Keisuke Ide ◽

Hideo Hosono ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Thin Film Transistor ◽

Free Process ◽

Sns Thin Films ◽

P Type

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p-type semiconducting α,ω-dihexylsexithiophene for an organic thin film transistor

Journal of Applied Physics ◽

10.1063/1.2711152 ◽

2007 ◽

Vol 101 (6) ◽

pp. 064502 ◽

Cited By ~ 18

Author(s):

Jae-Hong Kwon ◽

Jung-Hoon Seo ◽

Hochul Kang ◽

Dong Hoon Choi ◽

Byeong-Kwon Ju

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

P Type

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Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

MRS Advances ◽

10.1557/adv.2018.311 ◽

2018 ◽

Vol 3 (27) ◽

pp. 1525-1533 ◽

Cited By ~ 1

Author(s):

Eleonora Macchia ◽

Alla Zak ◽

Rosaria Anna Picca ◽

Kyriaki Manoli ◽

Cinzia Di Franco ◽

...

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Field Effect ◽

Thin Film Transistor ◽

Fold Increase ◽

Field Effect Mobility ◽

Figures Of Merit ◽

Electronic Channel ◽

Improved Performance ◽

P Type

ABSTRACTThis work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2 nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.

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