P‐194: Late‐News‐Poster: Selenium 4p Orbital Enables High‐Mobility p‐Type Tin Oxyselenide Semiconductor for Thin‐Film Transistor Applications

2020 ◽  
Vol 51 (1) ◽  
pp. 1394-1396
Author(s):  
Taikyu Kim ◽  
Jae Kyeong Jeong
2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Daiki Itohara ◽  
Kazato Shinohara ◽  
Toshiyuki Yoshida ◽  
Yasuhisa Fujita

Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates. In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed. Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements. It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure. pn-junction diodes were also tested, resulting in clear rectifying characteristics. The possibility of particle-process-based ZnO-NP electronics was confirmed.


2000 ◽  
Vol 31 (1) ◽  
pp. 1252 ◽  
Author(s):  
Yoon-Ho Song ◽  
Do-Hyung Kim ◽  
Sang-Woo Lee ◽  
Sang-Kyun Lee ◽  
Moon-Youn Jung ◽  
...  

2021 ◽  
Vol 32 (24) ◽  
pp. 245710
Author(s):  
Thi Thu Thuy Can ◽  
Hak-Lim Ko ◽  
Woon-Seop Choi

2019 ◽  
Vol 11 (50) ◽  
pp. 47025-47036 ◽  
Author(s):  
Sungyeon Yim ◽  
Taikyu Kim ◽  
Baekeun Yoo ◽  
Hongwei Xu ◽  
Yong Youn ◽  
...  

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Peng Xiao ◽  
Ting Dong ◽  
Linfeng Lan ◽  
Zhenguo Lin ◽  
Wei Song ◽  
...  

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