scholarly journals Research on Degradation of GaN-Based Blue LED Caused by γ Radiation under Low Bias

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Qifeng Zhao ◽  
Xiangyang Lu ◽  
Fajun Yu ◽  
Jinglei Xu ◽  
Zeping Fang ◽  
...  
Keyword(s):  
Induced Current ◽  
Physical Origin ◽  
Tunneling Model ◽  
Γ Radiation ◽  
Light Emitting ◽  
Carrier Lifetimes ◽  
Trap Assisted Tunneling ◽  
Radiation Induced ◽  
Recombination Centers ◽  
Assisted Tunneling

GaN multiquantum-well blue light-emitting diodes (LEDs) were radiated with 60Co γ-rays for accumulated doses up to 2.5 Mrad (SiO2). The radiation-induced current and 1/f noise degradations were studied when the devices operate at the low bias voltage. The current increased by 2.31 times, and the 1/f noise increased by 275.69 times after a dose of 2.5 Mrad (SiO2). Based on Hurkx’s trap-assisted tunneling model, the degradation of current was explained. γ radiation created defects in the space-charge region of LEDs. These defects as generation-recombination centers lead to the increase in the current. In addition, based on the quantum l/f noise theory, the degradation of 1/f noise might be also attributed to these defects, which caused an increase in the Hooge constant and a decrease in the carrier lifetimes. The current and 1/f noise degradations can be attributed to the same physical origin. Compared to the current, the 1/f noise parameter is more sensitive, so it may be used to evaluate the radiation resistance capability of GaN blue LEDs.

Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes

2015 ◽  
Vol 14 (2) ◽  
pp. 444-455 ◽  
Author(s):  
Marco Mandurrino ◽  
Michele Goano ◽  
Marco Vallone ◽  
Francesco Bertazzi ◽  
Giovanni Ghione ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Quantitative analysis of SILCs (stress-induced leakage currents) based on the inelastic trap-assisted tunneling model

1999 ◽  
Author(s):  
Shiro Kamohara ◽  
Yutaka Okuyama ◽  
Yukiko Manabe ◽  
Kosuke Okuyama ◽  
Katsuhiko Kubota ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Leakage Currents ◽  
Tunneling Model ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

I - V Characteristics in Surface-Activated Bonding (SAB) Based Si/SiC Junctions at Raised Ambient Temperatures

2014 ◽  
Vol 778-780 ◽  
pp. 718-721 ◽  
Author(s):  
Shota Nishida ◽  
Jian Bo Liang ◽  
Masashi Morimoto ◽  
Naoteru Shigekawa ◽  
Manabu Arai
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electrical Properties ◽  
Reverse Bias ◽  
Tunneling Model ◽  
Ambient Temperatures ◽  
Current Voltage ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Scanning Electron

The physical and electrical properties of p+-Si/n-4H-SiC and n+-Si/n-4H-SiC heterojunctions fabricated by using surface-activated bonding (SAB) were investigated by scanning electron microscopy (SEM), current-voltage (I-V) and breakdown characteristics measurements at raised ambient temperatures. The I-V characteristics for the reverse bias voltages of the two junctions were compared with the expectations based on Frenkel-Poole, and trap-assisted tunneling models. The results of calculations using the trap-assisted tunneling model were close to the measurements.

scholarly journals Compact Trap-Assisted-Tunneling Model for Line Tunneling Field-Effect-Transistor Devices

2020 ◽  
Vol 10 (13) ◽  
pp. 4475
Author(s):  
Faraz Najam ◽  
Yun Seop Yu
Keyword(s):  
Experimental Data ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Potential Profile ◽  
Relaxation Energy ◽  
Tunneling Model ◽  
Compact Formulation ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Trap-assisted-tunneling (TAT) is a well-documented source of severe subthreshold degradation in tunneling field-effect-transistors (TFET). However, the literature lacks in numerical or compact TAT models applied to TFET devices. This work presents a compact formulation of the Schenk TAT model that is used to fit experimental drain-source current (Ids) versus gate-source voltage (Vgs) data of an L-shaped and line tunneling type TFET. The Schenk model incorporates material-dependent fundamental physical constants that play an important role in influencing the TAT generation (GTAT) including the lattice relaxation energy, Huang–Rhys factor, and the electro-optical frequency. This makes fitting any experimental data using the Schenk model physically relevant. The compact formulation of the Schenk TAT model involved solving the potential profile in the TFET and using that potential profile to calculate GTAT using the standard Schenk model. The GTAT was then approximated by the Gaussian distribution function for compact implementation. The model was compared against technology computer-aided design (TCAD) results and was found in reasonable agreement. The model was also used to fit an experimental device’s Ids–Vgs characteristics. The results, while not exactly fitting the experimental data, follow the general experimental Ids–Vgs trend reasonably well; the subthreshold slope was loosely similar to the experimental device. Additionally, the ON-current, especially to make a high drain-source bias model accurate, can be further improved by including effects such as electrostatic degradation and series resistance.

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes

2015 ◽  
Vol 212 (5) ◽  
pp. 947-953 ◽  
Author(s):  
Marco Mandurrino ◽  
Giovanni Verzellesi ◽  
Michele Goano ◽  
Marco Vallone ◽  
Francesco Bertazzi ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling

Resistive memory variability: A simplified trap-assisted tunneling model

2016 ◽  
Vol 115 ◽  
pp. 126-132 ◽  
Author(s):  
Daniele Garbin ◽  
Elisa Vianello ◽  
Quentin Rafhay ◽  
Mourad Azzaz ◽  
Philippe Candelier ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Tunneling Model ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling
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