scholarly journals Modeling and Simulation of Biaxial Strained P-MOSFETs: Application to a Single and Dual Channel Heterostructure

2018 ◽  
Vol 8 (1) ◽  
pp. 421
Author(s):  
Amine Mohammed Taberkit ◽  
Ahlam Guen-Bouazza ◽  
Benyounes Bouazza
Keyword(s):  
Modeling And Simulation ◽  
Threshold Voltage ◽  
Carrier Mobility ◽  
Strained Silicon ◽  
Simulation Tool ◽  
Two Dimensional ◽  
Drive Current ◽  
Dual Channel ◽  
Simulation Results ◽  
Dimensional Simulation

The objectives of this work are focused on the application of strained silicon on MOSFET transistor. To do this, impact and benefits obtained with the use of strained silicon technology on p-channel MOSFETs are presented. This research attempt to create conventional and two-strained silicon MOSFETs fabricated from the use of TCAD, which is a simulation tool from Silvaco. In our research, two-dimensional simulation of conventional MOSFET, biaxial strained PMOSFET and dual channel strained P-MOSFET has been achieved to extract their characteristics. ATHENA and ATLAS have been used to simulate the process and validate the electronic characteristics. Our results allow showing improvements obtained by comparing the three structures and their characteristics. The maximum of carrier mobility improvement is achieved with percentage of 35.29 % and 70.59 % respectively, by result an improvement in drive current with percentage of 36.54 % and 236.71 %, and reduction of leakage current with percentage of 59.45 % and 82.75 %, the threshold voltage is also enhaced with percentage of: 60 % and 61.4%. Our simulation results highlight the importance of incorporating strain technology in MOSFET transistors.

Direct simulation of evolution and control of three-dimensional instabilities in attachment-line boundary layers

1995 ◽  
Vol 291 ◽  
pp. 369-392 ◽  
Author(s):  
Ronald D. Joslin
Keyword(s):  
Boundary Layer ◽  
Stokes Equations ◽  
Three Dimensional ◽  
Plate Boundary ◽  
Navier Stokes ◽  
Two Dimensional ◽  
Computationally Efficient ◽  
Simulation Results ◽  
Dimensional Simulation ◽  
Attachment Line

The spatial evolution of three-dimensional disturbances in an attachment-line boundary layer is computed by direct numerical simulation of the unsteady, incompressible Navier–Stokes equations. Disturbances are introduced into the boundary layer by harmonic sources that involve unsteady suction and blowing through the wall. Various harmonic-source generators are implemented on or near the attachment line, and the disturbance evolutions are compared. Previous two-dimensional simulation results and nonparallel theory are compared with the present results. The three-dimensional simulation results for disturbances with quasi-two-dimensional features indicate growth rates of only a few percent larger than pure two-dimensional results; however, the results are close enough to enable the use of the more computationally efficient, two-dimensional approach. However, true three-dimensional disturbances are more likely in practice and are more stable than two-dimensional disturbances. Disturbances generated off (but near) the attachment line spread both away from and toward the attachment line as they evolve. The evolution pattern is comparable to wave packets in flat-plate boundary-layer flows. Suction stabilizes the quasi-two-dimensional attachment-line instabilities, and blowing destabilizes these instabilities; these results qualitatively agree with the theory. Furthermore, suction stabilizes the disturbances that develop off the attachment line. Clearly, disturbances that are generated near the attachment line can supply energy to attachment-line instabilities, but suction can be used to stabilize these instabilities.

Impact of Cavity on Sunroof Buffeting: A Two Dimensional CFD Study

2004 ◽  
Author(s):  
Chang-Fa An ◽  
Seyed Mehdi Alaie ◽  
Michael S. Scislowicz
Keyword(s):  
Fluid Dynamics ◽  
Wind Tunnel ◽  
Three Dimensional ◽  
Leading Edge ◽  
Two Dimensional ◽  
Deep Insight ◽  
Simulation Results ◽  
Dimensional Simulation ◽  
The Impact ◽  
Insight Into

Driven by fluid dynamics principles, the concept for buffeting reduction, a cavity installed at the leading edge of the sunroof opening, is analyzed. The cavity provides a room to hold the vortex, shed from upstream, and prevents the vortex from escaping and from directly intruding into the cabin. The concept has been verified by means of a two dimensional simulation for a production SUV using the CFD software — FLUENT. The simulation results show that the impact of the cavity is crucial to reduce buffeting. It is shown that the buffeting level may be reduced by 3 dB by adding a cavity to the sunroof configuration. Therefore, the cavity could be considered as a means of buffeting reduction, in addition to the three currently-known concepts: wind deflector, sunroof glass comfort position and cabin venting. Thorough understanding of the buffeting mechanism helps explain why and how the cavity works to reduce buffeting. Investigation of the buffeting-related physics provides a deep insight into the flow nature and, therefore, a useful hint to geometry modification for buffeting reduction. The buffeting level may be further reduced by about 4 dB or more by cutting the corners of the sunroof opening into smooth ramps, guided by ideas coming from careful examining the physics of flow. More work including three dimensional simulation and wind tunnel experiment should follow in order to develop more confidence in the functionality of the cavity to hopefully promote this idea to the level that it can be utilized in a feasible way to address sunroof buffeting.

scholarly journals Strained SI/SIGE/SI Nano-Channel Hoi Mosfet

2019 ◽  
Vol 8 (2S3) ◽  
pp. 1227-1230
Keyword(s):  
Threshold Voltage ◽  
Silicon Germanium ◽  
Ballistic Transport ◽  
Drain Current ◽  
Channel Length ◽  
Strained Silicon ◽  
Short Channel ◽  
Strained Si ◽  
Dual Channel ◽  
Nano Channel

Strained Si technology has headed in the development of single or dual channel strained silicon MOSFETs devices. Comprehending the need of advancement in recent technologies with miniaturized features, developing a novel MOSFET on ultrathin double strained Si with strained SiGe sandwiched in between and forming a tri-channel MOSFET has been the crux of this present research. Incorporation of quantum carrier confinement effect on the ultrathin dual strained Si layers in the channel has been implemented to counterbalance the threshold voltage roll-off induced by the strained layers. A comparison of the conventional strained silicon on relaxed silicon-germanium with double strained silicon channel MOSFET has been perceived leading to eloquent drain current enhancement of ~49% with a small reduction in the threshold voltage caused by the additional bottom strained Si layer. Further, 100nm and 50nm channel length have been compared and a superior device characteristic for the reduced device dimension is attained as the prominence of velocity overshoot is more in short channel device approaching to quasi-ballistic transport in the channel region

A Comparative Study Between Two-Dimensional and Three-Dimensional Simulation Results of Melting Inside a Container

2020 ◽  
Author(s):  
Nan Hu ◽  
Li-Wu Fan
Keyword(s):  
Velocity Profile ◽  
Heating Temperature ◽  
Three Dimensional ◽  
Detailed Comparison ◽  
Melting Rate ◽  
Two Dimensional ◽  
End Effects ◽  
Wall Superheat ◽  
Simulation Results ◽  
Dimensional Simulation

Abstract Bother two-dimensional (2D) and three-dimensional (3D) simulations on two example melting problems, i.e., melting in a differentially-heated rectangular cavity and constrained melting in a horizontal cylindrical capsule, were carried out to investigate the rationality of 2D simplification. The effects of thermophysical properties of the phase change material, size of the container along the direction perpendicular to the 2D cross-section, as well as wall superheat were taken into consideration for a systematic and detailed comparison. It was shown that a small length of the container perpendicular to 2D plane will result in a confine space to limit the development of velocity distribution (i.e., parabolic velocity profile) due to the end effects, leading to to an almost identical melting rate to that obtained by the 2D simplified case. A larger size indicates stronger thermal convection (bulk uniform velocity profile) and faster melting rate. When fixing a large size of the container perpendicular to the 2D plane, decreasing the heating temperature and increasing the viscosity of liquid PCM (e.g., by adding nanoparticles) reduce the discrepancy between 2D and 3D simulation results.

VPN Security Technology Theory Modeling and Simulation

2011 ◽  
Vol 135-136 ◽  
pp. 1114-1119
Author(s):  
Ya Qin Fan ◽  
Sheng Sheng Qian ◽  
Feng Shan Liang
Keyword(s):  
Theoretical Model ◽  
Modeling And Simulation ◽  
Reference Value ◽  
Simulation Tool ◽  
Security Technology ◽  
Technical Performance ◽  
Security Technologies ◽  
Simulation Results ◽  
Opnet Simulation

In order to authenticate users and to strictly control the only authorized users can access VPN address and biling functions to provide audit expenses such problems, the paper established a theoretical model of VPN security technologies, the use of OPNET simulation tool for safety and technical performance of the VPN the simulation results of VPN security professionals with practical reference value.

Focused Refinement in the RRT*: Trading Optimality for Improved Performance

2015 ◽  
Author(s):  
Beth Boardman ◽  
Sonia Martínez ◽  
Troy Harden
Keyword(s):  
Low Cost ◽  
Computation Time ◽  
Two Dimensional ◽  
Differential Constraints ◽  
Dubins Vehicle ◽  
Smoothing Process ◽  
Simulation Results ◽  
Improved Performance ◽  
Dimensional Simulation

This paper investigates how to limit the exploration property of the RRT* algorithm in order to decrease the computation time needed to produce a low-cost, but good enough, path. We aim to do this by (i) focusing the attention of the RRT* algorithm on paths that are found quickly by RRT*, and by (ii) reducing the number of nodes in the obtained paths. The latter is achieved by an online smoothing process that aims to connect added nodes directly to their grandparents. Extensive two-dimensional simulation results are provided to examine how the number of obstacles in an environment affects the proposed extensions. Simulations for a Dubins’ vehicle are presented to show how the modifications perform for vehicles with differential constraints.

Simulation Research of the Long-Base Silicon Magnetic Sensitive Diode Negative-Resistance Characteristics on the Base of ATLAS

2013 ◽  
Vol 562-565 ◽  
pp. 465-470 ◽  
Author(s):  
Xiao Feng Zhao ◽  
Lei Li ◽  
Ping Wang ◽  
Dian Zhong Wen ◽  
Gang Li
Keyword(s):  
Simulation Model ◽  
Negative Resistance ◽  
Two Dimensional ◽  
Simulation Research ◽  
Deep Impurity ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Simulation Results ◽  
Dimensional Simulation ◽  
Main Factor

According to the experimental results of the long-base silicon magnetic sensitive diode, this paper adopted ATLAS software to establish the two dimensional simulation model in order to research the negative resistance characteristics of the long-base silicon magnetic sensitive diode. Deep impurities were introduced into the long base to study the effect of the concentration and the distribution of deep impurities on the current-voltage characteristics of the long-base silicon magnetic sensitive diode. The simulation results showed that the deep impurity in the long base was the main factor that impacted on the negative resistance characteristics of the long-base silicon magnetic sensitive diode.

Stress Liner Proximity Technique to Enhance Carrier Mobility in High-κ Metal Gate MOSFETs

2009 ◽  
Vol 1194 ◽  
Author(s):  
Dechao Guo ◽  
Kathryn Schonenberg ◽  
Jie Chen ◽  
Daniel Jaeger ◽  
Pranita Kulkarni ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Carrier Mobility ◽  
Metal Gate ◽  
Short Channel ◽  
Drive Current ◽  
Channel Mobility ◽  
Technology Node ◽  
Channel Control ◽  
First Time

AbstractFor the first time, we discuss the compatibility of stress proximity technique (SPT) with dual stress liner (DSL) in high-κ/metal gate (HK/MG) technology. The short-channel mobility enhancement and the drive current improvement brought by SPT have been demonstrated at 32nm technology node. With maintained short channel control and threshold voltage roll-off characteristics, SPT has achieved 7% drive current improvement for both nFET and pFET from the optimization of SPT with DSL.

Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs

2010 ◽  
Vol 31 (8) ◽  
pp. 084008 ◽  
Author(s):  
Li Jin ◽  
Liu Hongxia ◽  
Li Bin ◽  
Cao Lei ◽  
Yuan Bo
Keyword(s):  
Analytical Model ◽  
Threshold Voltage ◽  
Silicon On Insulator ◽  
Strained Silicon ◽  
Two Dimensional
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