Comparison of Oxygen Plasma Treatment and Sandblasting of Titanium Implant-Abutment Surface on Bond Strength and Surface Topography

Author(s):  
Nahla El-Helbawy ◽  
Abeer El-Hatery ◽  
Mohammed Ahmed
Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1326
Author(s):  
Ting-Yi Chiang ◽  
Chun-Chuan Yang ◽  
Yi-Hsuan Chen ◽  
Min Yan ◽  
Shinn-Jyh Ding

Improving the bond strength of veneering ceramics to ZrO2-based cores remains a challenge. The purpose of this study was to evaluate the shear bond strength of different ZrO2 cores containing calcium silicate (CaSi) to veneering ceramics. Five types of ZrO2-based cores (n = 230) were divided into two groups: with or without oxygen plasma treatment. These were bound to two veneering ceramics (IPS e.max Ceram or VITA VM9). Shear bond strength of veneering ceramics to various cores was measured (n = 10), in addition to phase composition, surface morphology and contact angle of the cores. The results indicated that the plasma treatment had a significant effect on the water contact angle of the ZrO2-based cores, but had little effect on the bond strength. Regardless of plasma treatment, the highest strength value was recorded in the ZrO2 core specimen containing 20 wt % CaSi, when all cores were adhered to VITA VM 9 veneer. When using IPS e.max Ceram veneer, the shear bond strength of the plasma-treated 20 wt % CaSi-containing ZrO2 core was 16.6 ± 0.9 MPa higher than that of VITA In-Ceram YZ core control (13.4 ± 1.0 MPa) (p < 0.05). We conclude that the presence of 20 wt % CaSi in ZrO2 can improve the shear bond strength of zirconia-based cores to veneering ceramic.


2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.


RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..


2019 ◽  
Vol 463 ◽  
pp. 91-95 ◽  
Author(s):  
Vallivedu Janardhanam ◽  
Hyung-Joong Yun ◽  
Inapagundla Jyothi ◽  
Shim-Hoon Yuk ◽  
Sung-Nam Lee ◽  
...  

2017 ◽  
Vol 53 (89) ◽  
pp. 12100-12103 ◽  
Author(s):  
Jaeyeon Bae ◽  
Jin-Woo Jung ◽  
Hyo Yul Park ◽  
Chang-Hee Cho ◽  
Jinhee Park

HKUST-1, a representative MOF, can be both regenerated and protected against moisture deactivation by treatment with O2 plasma.


2011 ◽  
Vol 11 (11) ◽  
pp. 3031-3035 ◽  
Author(s):  
W. S. Shih ◽  
S. J. Young ◽  
L. W. Ji ◽  
W. Water ◽  
T. H. Meen ◽  
...  

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