The dependence of effective channel width of quasi-one-dimensional split-gate devices on carrier density

AbstractSurface plasmons, collective electromagnetic excitations coupled to conduction electron oscillations, enable the manipulation of light–matter interactions at the nanoscale. Plasmon dispersion of metallic structures depends sensitively on their dimensionality and has been intensively studied for fundamental physics as well as applied technologies. Here, we report possible evidence for gate-tunable hybrid plasmons from the dimensionally mixed coupling between one-dimensional (1D) carbon nanotubes and two-dimensional (2D) graphene. In contrast to the carrier density-independent 1D Luttinger liquid plasmons in bare metallic carbon nanotubes, plasmon wavelengths in the 1D-2D heterostructure are modulated by 75% via electrostatic gating while retaining the high figures of merit of 1D plasmons. We propose a theoretical model to describe the electromagnetic interaction between plasmons in nanotubes and graphene, suggesting plasmon hybridization as a possible origin for the observed large plasmon modulation. The mixed-dimensional plasmonic heterostructures may enable diverse designs of tunable plasmonic nanodevices.

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Synergistic doping effects of a ZnO:N/BiVO4:Mo bunched nanorod array photoanode for enhancing charge transfer and carrier density in photoelectrochemical systems

Nanoscale ◽

10.1039/c8nr06630b ◽

2018 ◽

Vol 10 (43) ◽

pp. 20256-20265 ◽

Cited By ~ 16

Author(s):

Donghyung Kim ◽

Zhuo Zhang ◽

Kijung Yong

Keyword(s):

Charge Transfer ◽

Carrier Density ◽

Nanorod Array ◽

Charge Carriers ◽

One Dimensional ◽

Doping Effects

One-dimensional heterojunction nanorods are highly attractive as photoanodes for developing efficient photoelectrochemical (PEC) systems for the effective photogeneration of charge carriers and transport.

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Quantitative Fitting of Nonlinear Current–Voltage Curves and Parameter Retrieval of Semiconducting Nanowire, Nanotube and Nanoribbon Devices

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.n04 ◽

2008 ◽

Vol 8 (1) ◽

pp. 252-258 ◽

Cited By ~ 38

Author(s):

Y. Liu ◽

Z. Y. Zhang ◽

Y. F. Hu ◽

C. H. Jin ◽

L.-M. Peng

Keyword(s):

Quantitative Analysis ◽

Carrier Density ◽

Semiconductor Nanowires ◽

Schottky Barriers ◽

Metal Electrodes ◽

One Dimensional ◽

Metal Semiconductor Metal ◽

Current Voltage ◽

Semiconducting Nanostructures ◽

Parameter Retrieval

A quantitative metal-semiconductor-metal (MSM) model and a Matlab based program have been developed and used to obtain parameters that are important for characterizing semiconductor nanowires (NWs), nanotubes (NTs) or nanoribbons (NRs). The use of the MSM model for quantitative analysis of nonlinear current–voltage curves of one-dimensional semiconducting nanostructures is illustrated by working through two examples, i.e., an amorphous carbon NT and a ZnO NW, and the obtained parameters include the carrier density, mobility, resistance of the NT(NW), and the heights of the two Schottky barriers formed at the interfaces between metal electrodes and semiconducting NT(NW).

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I-Shaped SiGe Fin Tunnel Field-Effect Transistor with High ION/IOFF Ratio

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.17794 ◽

2020 ◽

Vol 20 (7) ◽

pp. 4298-4302

Author(s):

Ryoongbin Lee ◽

Junil Lee ◽

Kitae Lee ◽

Soyoun Kim ◽

Sihyun Kim ◽

...

Keyword(s):

Computer Aided Design ◽

Field Effect ◽

Field Effect Transistor ◽

Channel Width ◽

Condensation Process ◽

Performance Improvements ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Aided Design ◽

Effective Channel

In this paper, we propose an I-shaped SiGe fin tunnel field-effect transistor (TFET) and use technology computer aided design (TCAD) simulations to verify the validity. Compared to conventional Fin TFET on the same footprint, a 27% increase in the effective channel width can be obtained with the proposed TFET. The proposed Fin TFET was confirmed to have 300% boosted on-current (I on), 25% reduced subthreshold swing (SS), and 52% lower off-current (I off) than conventional Fin TFET through TCAD simulation results. These performance improvements are attributed to increased effective channel width and enhanced gate controllability of the I-shaped fin structure. Furthermore, the fabrication process of forming an I-shaped SiGe fin is also presented using the SiGe wet etch. By optimizing the Ge condensation process, an I-shaped SiGe fin with a Ge ratio greater than 50% can be obtained.

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