Different Pathways for Synthesis of WO3 and Vertically Aligned Carbon Nanotube-Based Nanostructures

2021 ◽  
Vol 21 (4) ◽  
pp. 2388-2393
Author(s):  
Anna Szabó ◽  
Gábor Kovács ◽  
Anita Kovács ◽  
Klara Hernadi
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Synthesis Method ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertically Aligned ◽  
Carbon Nanotube Forests ◽  
Scanning Electron

The synthesis and investigation of vertically aligned carbon nanotube (VACNT) based materials are gaining more-and-more interest among scientists due to their specific properties (e.g., electrical, optical, mechanical). Therefore, our interest for the present research has focused on synthesis of WO3/VACNT based nanostructures (using carbon nanotube forests obtained by catalytic chemical vapor deposition—CCVD method on aluminum substrate) using different synthesis pathways and WO3 precursors. The obtained composites were investigated by scanning electron microscopy (SEM), Raman spectroscopy, while the obtained crystal structures were characterized by X-ray diffraction (XRD). Results have shown that depending on the synthesis method, and using as template the carbonaceous structure, we can successfully obtain non-stochiometric tungsten oxide (W18O49) or WO3 composites.

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

The deposition of α–Fe2O3 by aerosol chemical vapor deposition

1995 ◽  
Vol 10 (5) ◽  
pp. 1307-1311 ◽  
Author(s):  
A. Martínez ◽  
J. Peña ◽  
M. Labeau ◽  
J.M. González-Calbet ◽  
M. Vallet-Regí
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Magnetic Measurements ◽  
Chemical Vapor ◽  
Spray Pyrolysis Method ◽  
X Ray Diffraction ◽  
Good Adherence ◽  
X Ray ◽  
Pyrolysis Method ◽  
Scanning Electron

α-Fe2O3 thin films have been deposited on Si(111) substrates at high temperatures (600–800 °C) by the spray pyrolysis method. Four different iron(III) β-diketonates have been used as precursors in order to obtain polycrystalline films of good adherence, which have been characterized by x-ray diffraction, scanning electron microscopy, and magnetic measurements.

Growth of highly (111)-oriented, highly coalesced diamond films on platinum (111) surface: A possibility of heteroepitaxy

1996 ◽  
Vol 11 (12) ◽  
pp. 2955-2956 ◽  
Author(s):  
Yoshihiro Shintani
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Scanning Electron

A highly (111)-oriented, highly coalesced diamond film was grown on platinum (111) surface by microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy and x-ray diffraction analyses revealed that the (111) diamond facets were azimuthally oriented epitaxially with respect to the orientation of the Pt(111) domain underneath, with the neighboring facets of diamond being coalesced with each other. The film was confirmed as diamond using Raman spectroscopy.

scholarly journals Synthesis of Antimony Sulphoiodide by CVD and its Characterization

2013 ◽  
Vol 30 ◽  
pp. 111-117 ◽  
Author(s):  
Harish K. Dubey ◽  
L. P. Deshmukh ◽  
D. E. Kshirsagar ◽  
Vijay S. Jadhav ◽  
Madhuri Sharon ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Society ◽  
X Ray Diffraction ◽  
Group V ◽  
X Ray ◽  
Methods Of Synthesis ◽  
Scanning Electron

Antimony Sulphoiodide is most widely studied compound in group V-VI-VII family due to its largenumber of properties. Varoius methods of synthesis have been reported. We are the first to reportsynthesis of shiny SbSI crystals by the Chemical Vapor Deposition (CVD) technique using powder ofAntimony, Sulphur and Iodine as the starting material. Needle shaped thin crystals of SbSI were foundgrown vertically on the walls of the quartz tube. Characterizations of the sample were done usingdifferent techniques such as powder X-ray diffraction (XRD), scanning electron microscopy (SEM)and energy dispersive X-ray analysis (EDAX). The charcteristcs peaks in Raman scattering plots (0-500 cm-1) match with the reported results. The compound exibits high resitivity at room temperaturein the order of 10-7 Ω-cm and dielectric constant in the order of 10-3 measured at 1 KHz.DOI: http://dx.doi.org/10.3126/jncs.v30i0.9381Journal of Nepal Chemical Society Vol. 30, 2012 Page:  111-117 Uploaded date: 12/20/2013   

Synthesis of Crystalline C3N4 films and the new C-N Phases

1996 ◽  
Vol 441 ◽  
Author(s):  
Yan Chen ◽  
D. J. Johnson ◽  
R. H. Prince ◽  
Liping Guo ◽  
E. G. Wang
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Monoclinic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Hot Filament

AbstractCrystalline C-N films composed of α- and β-C3N4, as well as other C-N phases, have been synthesized via bias-assisted hot-filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy(SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the films. Lattice constants of the α- and β-C3N4 phases obtained coincide very well with the theoretical values. In addition to these phases, two new C-N phases in the films have been identified by TEM and XRD; one having a tetragonal structure with a = 5.65 Å, c = 2.75Å, and the second having a monoclinic structure with a = 5.065 Å, b= 11.5 Å, c = 2.801 Å and β = 96°. Their stoichiometric values and atomic arrangements have not yet been identified. Furthermore, variation in growth parameters, for example methane concentration, bias voltage, etc., can yield preferred growth of different C-N phases.

Synthesis and Cathodoluminescence of β-Ga2O3 Nanowires with Holes

2008 ◽  
Vol 8 (3) ◽  
pp. 1284-1287
Author(s):  
Xitian Zhang ◽  
Zhuang Liu ◽  
Suikong Hark
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Chemical Vapor ◽  
Oxide Nanowires ◽  
X Ray ◽  
Transmission Electron ◽  
Reactive Surfaces ◽  
Scanning Electron

Gallium oxide nanowires were synthesized on Si (001) substrate by chemical vapor deposition, using a Ga/Ga2O3 mixture as a precursor and Au as a catalyst. The structure of the as-synthesized products was examined by X-ray powder diffraction and high-resolution transmission electron microscopy, and found to be monoclinic β-Ga2O3. The morphologies of the β-Ga2O3 nanowires were characterized by scanning electron microscopy. The majority of the nanowires contain holes along their length, but a few were also found without holes. The holes are believed to be formed by the reaction of adsorbed Ga droplets on reactive terminating surfaces of the nanowires. For nanowires where these reactive surfaces are not exposed, the reaction of Ga is retarded. Cathodoluminescence (CL) of the nanowires was measured. Three emission bands centered at 376, 454, and 666 nm, respectively, were observed.

SiGe Nanowires Grown by LPCVD: Morphological and Structural Analysis

2010 ◽  
Vol 1258 ◽  
Author(s):  
Andrés Rodríguez ◽  
Jesús Sangrador ◽  
Tomás Rodríguez ◽  
Carmen Ballesteros ◽  
Carmelo Prieto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Chemical Vapor Deposition Reactor ◽  
X Ray ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Scanning Electron

AbstractSiGe nanowires were grown by the vapor-liquid-solid method using a low pressure chemical vapor deposition reactor and different flows of the GeH4 and Si2H6 gas precursors. The morphology of the nanowires was studied by field emission scanning electron microscopy, and the length, diameter and density of nanowires were determined. Their structure and crystallinity were analyzed by transmission electron microscopy and its related techniques. Energy dispersive X-ray emission of individual nanowires as well a Raman spectroscopy were used to determine their composition and to analyze its homogeneity.

Preparation of Cerium Oxide Tubes with Wool Fibers as Template

2015 ◽  
Vol 671 ◽  
pp. 248-254
Author(s):  
Jia Li Gu ◽  
Li Jiang Lu ◽  
Song Liu ◽  
Min Shao ◽  
Guo Qing Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Cerium Oxide ◽  
Vapor Deposition ◽  
Energy Dispersive Spectrometer ◽  
Deposition Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermogravimetric Analyzer ◽  
Wool Fibers ◽  
Scanning Electron

Using wool fibers as template and Ce (NO3)3•6H2O, PEG and NH3·H2O as precursors, micron-scale CeO2tubes composed of well-crystalline CeO2nanoparticles have been synthesized. Cerium oxide was first precipitated on the wool fibers by vapor deposition method, then the fibers were removed by a two-step calcination. The obtained products were characterized by scanning electron microscopy (SEM), thermogravimetric Analyzer (TGA), powder X-ray diffraction (XRD) and energy dispersive spectrometer (EDS). The results show that intact tubes with a diameter of 8~12μm have been successfully prepared.

scholarly journals Metal film deposition by laser breakdown chemical vapor deposition

1986 ◽  
Vol 1 (3) ◽  
pp. 420-424 ◽  
Author(s):  
T.R. Jervis ◽  
L.R. Newkirk
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron

Dielectric breakdown of gas mixtures can be used to deposit thin films by chemical vapor deposition with appropriate control of flow and pressure conditions to suppress gas-phase nucleation and particle formation. Using a pulsed CO2 laser operating at 10.6 μ where there is no significant resonant absorption in any of the source gases, homogeneous films from several gas-phase precursors have been sucessfully deposited by gas-phase laser pyrolysis. Nickel and molybdenum from the respective carbonyls representing decomposition chemistry and tungsten from the hexafluoride representing reduction chemistry have been demonstrated. In each case the gas precursor is buffered with argon to reduce the partial pressure of the reactants and to induce breakdown. Films have been characterized by Auger electron spectroscopy, x-ray diffraction, transmission electron microscopy, pull tests, and resistivity measurements. The highest quality films have resulted from the nickel depositions. Detailed x-ray diffraction analysis of these films yields a very small domain size consistent with the low temperature of the substrate and the formation of metastable nickel carbide. Transmission electron microscopy supports this analysis.

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