Tunable optoelectronic properties of sol–gel derived ZnO nanostructure thin film by annealing treatment

2014 ◽  
Vol 4 (5) ◽  
pp. 422-428 ◽  
Author(s):  
M. A. Mohd Sarjidan ◽  
N. S. Salleh ◽  
S. H. Basri ◽  
R. Razali ◽  
N. K. Za'aba ◽  
...  
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Optoelectronic Properties ◽  
Zno Nanostructure

Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

2009 ◽  
Vol 79-82 ◽  
pp. 747-750 ◽  
Author(s):  
Dong Qing Liu ◽  
Wen Wei Zheng ◽  
Hai Feng Cheng ◽  
Hai Tao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transition ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Simple Method ◽  
X Ray ◽  
Post Annealing ◽  
Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

Annealing Treatment of the SnO2 Thin Film Prepared by Sol-Gel Method

2011 ◽  
Vol 331 ◽  
pp. 194-197 ◽  
Author(s):  
Qi Xiao ◽  
Rui Wang ◽  
Lei Xu
Keyword(s):  
Thin Film ◽  
Glass Fiber ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Annealing Process ◽  
Sno2 Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Tin Chloride ◽  
Solution Preparation

SnO2 thin film on the glass fiber was prepared by the ethanol solvent and crystalline tin chloride based Sol-gel method, including the process of solution preparation, fiber dip-immersing, gel reaction and annealing. The sol was prepared by alcoholysis reaction of 0.9mol/l chloride- ethanol solvent under 80°C. A thin film of sol was prepared by dip-immersing process, then a post annealing process with various temperatures and time was adopted to form a stable crystallized film on the surface of the glass fiber. X-ray diffraction, scanning electron microscope (SEM) and fiber electric resistance measurement were utilized to characterize the transmittance and resistivity of the thin film With the rising of annealing temperature, the transmittance of the thin film was firstly increased and then decreased while the resistivity changed adversely. At last, an optimized annealing process with 550°C and 3h was chosen.

Electrical and Structural Properties of TiO2 Thin Film Prepared at Different Annealing Temperatures by Sol-Gel Spin-Coating Method

2013 ◽  
Vol 667 ◽  
pp. 371-374 ◽  
Author(s):  
M. Basri ◽  
Mohd Nor Asiah ◽  
Mohd Khairul bin Ahmad ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Annealing Treatment ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Coating Method

Titanium Dioxide (TiO2) thin films have been prepared on glass substrates by using sol-gel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO2 thin films improved as annealed at higher temperatures.

Comparison of Deposition Methods of ZnO Thin Film on Flexible Substrate

2017 ◽  
Vol 5 (3) ◽  
pp. 536
Author(s):  
A. A.M. Idris ◽  
R. Arsat ◽  
M. K. Ahmad ◽  
F. Sidek
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Flexible Substrate ◽  
Sol Gel ◽  
Rf Sputtering ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Zno Film ◽  
Zno Nanostructure

This paper reports the effect of the different deposition methods towards the ZnO nanostructure crystal quality and film thickness on the polyimide substrate. The ZnO film has been deposited by using the spray pyrolysis technique, sol-gel and RF Sputtering. Different methods give a different nanostructure of the ZnO thin film. Sol gel methods, results of nanoflowers ZnO thin film with the thickness of thin film is 600nm. It also produces the best of the piezoelectric effect in term of electrical performance, which is 5.0 V and 12 MHz of frequency which is higher than other frequency obtained by spray pyrolysis and RF sputtering.

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

NiO-doped CaCu3Ti4O12 Thin Film by Sol-Gel Method

2013 ◽  
Author(s):  
Dong XU ◽  
Qi SONG ◽  
Ke ZHANG ◽  
Hong-Xing XU ◽  
Yong-Tao YANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Detoxification of Aflatoxin B1 in Peanut Oil by Iodine Doped Supported TiO2 Thin Film Under Ultraviolet Light Irradiation

2018 ◽  
Vol 15 (2) ◽  
pp. 188-196 ◽  
Author(s):  
Chengpeng Xu ◽  
Shengying Ye ◽  
Xiaolei Cui ◽  
Quan Zhang ◽  
Yan Liang
Keyword(s):  
Thin Film ◽  
Photocatalytic Degradation ◽  
Aflatoxin B1 ◽  
Tio2 Thin Film ◽  
Sol Gel ◽  
Glass Tube ◽  
Iodine Concentration ◽  
Peanut Oil ◽  
Pseudo First Order Reaction ◽  
Supported Tio2

Background: Improper storage and raw materials make peanut oil susceptible to Aflatoxin B1 (AFB1). The semiconductor TiO2 photocatalysis technology is an effective technology which is widely used in sewage treatment, environmental protection and so on. Moreover, the photocatalytic efficiency can be improved by doping I. Method: The experiment is divided into two parts. In the first part, supported TiO2 thin film (STF) was prepared on the quartz glass tube (QGT) by the sol-gel and calcination method and the supported iodine doped supported TiO2 thin film (I-STF) was synthesized using potassium iodate solution. In the second part, the photocatalytic degradation of AFB1 was performed in a self-made photocatalytic reactor. The AFB1 was detected by ELISA kit. Results: The photocatalytic degradation of AFB1 has been proven to follow pseudo first-order reaction kinetics well (R2 > 0.95). The maximum degradation rate of 81.96%, which was reached at the optimum iodine concentration of 0.1mol/L, was 11.38% higher than that with undoped STF. The doping of iodine reduces the band-gap of TiO2, thereby increasing the photocatalytic response range. The proportion of Ti4+ in I-STF has decreased, which means that Ti4+ are replaced by I. The I-STF prepared at iodine concentration of 0.1mol/L has good photocatalytic properties.

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