Considerations and Optimization of Measurement Accuracy of Capacitance in Nano-Scale CMOS Technology

2012 ◽  
Vol 4 (9) ◽  
pp. 924-929 ◽  
Author(s):  
Si Han Cao ◽  
Xiao Peng Yu ◽  
Yun Pan ◽  
Zheng Shi ◽  
Chang Hui Hu
Keyword(s):  
Measurement Accuracy ◽  
Cmos Technology ◽  
Nano Scale

scholarly journals The impact of BTI aging on the reliability of level shifters in nano-scale CMOS technology

2016 ◽  
Vol 67 ◽  
pp. 74-81 ◽  
Author(s):  
Basel Halak ◽  
Vasileios Tenentes ◽  
Daniele Rossi
Keyword(s):  
Cmos Technology ◽  
Nano Scale ◽  
Level Shifters ◽  
The Impact

Nano-scale MOSFET device modelling with quantum mechanical effects

2006 ◽  
Vol 17 (4) ◽  
pp. 465-489 ◽  
Author(s):  
ELLIS CUMBERBATCH ◽  
SHIGEYASU UNO ◽  
HENOK ABEBE
Keyword(s):  
Integrated Circuit ◽  
Numerical Data ◽  
Cmos Technology ◽  
Quantum Mechanical ◽  
Matched Asymptotic Expansion ◽  
Hot Electron ◽  
Nano Scale ◽  
Quantum Confinement Effects ◽  
Quantum Mechanical Effects ◽  
Device Modelling

The continuing down-scaling trend of CMOS technology has brought serious deterioration in the accuracy of the SPICE (Simulation Program with Integrated Circuit Emphasis) device models used in the design of chip functions. This is due to in part to hot electron and quantum effects that occur in modern nano-scale MOSFET devices [13, 25, 28, 33, 34]. The focus of this paper is on modeling quantum confinement effects based on the Density-Gradient (DG) model [6, 9, 14], for application in SPICE. Analytic 1-D quantum mechanical (QM) effects correction formulae for the MOSFET inversion charge and electrostatic potential are derived from the DG model using matched asymptotic expansion techniques. Comparison of these new models with numerical data shows good results.

scholarly journals Design and Analysis of Optimized Fin-FETs

2015 ◽  
Vol 4 (04) ◽  
pp. 01-06
Author(s):  
Prof. Nikhil Surkar
Keyword(s):  
Semiconductor Industry ◽  
Cmos Technology ◽  
Ring Oscillator ◽  
Scale Level ◽  
Nano Scale ◽  
Level Of Abstraction

Semiconductor industry greatly depends on CMOS technology and now needs competent technology with handful benefits. This paper examines and analyzes the modern FINFET technology. This analysis is performed through 9 stages Ring Oscillator equipped with FINFET. Performance is analyzed by comparing the proposed structure with CMOS based 9 stage Ring Oscillator at the nano-scale level of abstraction.

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