Influence of Mg2+ Substitution for Sn4+ on Electronic Structure and Optical Properties of SnO2

2019 ◽  
Vol 11 (10) ◽  
pp. 1387-1394 ◽  
Author(s):  
Haiying He ◽  
Zibin Wu ◽  
Yu Chen ◽  
Zhihao Yang ◽  
Minghuai Yu ◽  
...  

First-principles calculation based on density functional theory (DFT) were employed to theoretically study the influence of partially replacing Sn4+ by Mg2+ on the electronic structure and optical properties of SnO2. The calculation results revealed that the Femi level shifted into the valence band, thereby indicating a p-type conductivity character. The energy band gap for SnO2 was found to be narrowed due to Mg2+ doping. Considering that the energy level for Mg 3s orbitals is comparable to that of O 2p orbitals, the localization behavior in the SnO2 valence band was modified. The imaginary part of dielectric functions' spectrum shifted towards lower energy after doping SnO2 with Mg2+, accompanied by an obvious redshift of the absorption edge. Furthermore, the absorption intensity for the doped systems was larger than that of pure SnO2 matrix in the low-energy region.

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52449-52455 ◽  
Author(s):  
Qiang Zhao ◽  
Zheng Zhang ◽  
Xiaoping Ouyang

We investigated the effects of high pressure on the electronic structure and optical properties of a CsI crystal through a first-principles calculation method based on density functional theory.


2009 ◽  
Vol 23 (19) ◽  
pp. 2339-2352 ◽  
Author(s):  
LI BIN SHI ◽  
SHUANG CHENG ◽  
RONG BING LI ◽  
LI KANG ◽  
JIAN WEI JIN ◽  
...  

Density of states and band structure of wurtzite ZnO are calculated by the CASTEP program based on density functional theory and plane-wave pseudopotential method. The calculations are carried out in axial and unaxial strains, respectively. The results of density of states in different strains show that the bottom of the conduction band is always dominated by Zn 4s, and the top of valence band is always dominated by O 2p. The variation of the band gap calculated from band structure is also discussed. In addition, p-d repulsion is used in investigating the variation of the top of the valence band in different strains and the results can be verified by electron density difference.


2013 ◽  
Vol 373-375 ◽  
pp. 1965-1969
Author(s):  
Kun Nan Qin ◽  
Ling Zhi Zhao ◽  
Yong Mei Liu ◽  
Fang Fang Li ◽  
Chao Yang Cui

The electronic structure and optical properties of Cu-doped SnS2with Sn-substituted content of 0, 12.5 and 37.5 at.% were successfully calculated by the first principles plane-wave pseudopotentials based on the density functional theory. It is found that the intermediate belts appear near the Fermi level and the energy band gap becomes narrower after the doping of the Cu atoms. The absorption peaks show a remarkable redshift and the absorption region broadens relatively after introducing acceptor impurity level. When Sn atoms of 37.5 at% were substituted by Cu, the optical absorption coefficient is significantly improved in the frequency range below 5.58 eV and over 8.13 eV.


2011 ◽  
Vol 216 ◽  
pp. 341-344 ◽  
Author(s):  
Qi Jun Liu ◽  
Zheng Tang Liu ◽  
Li Ping Feng

Electronic structure, effective masses and optical properties of monoclinic HfO2were studied using the plane-wave ultrasoft pseudopotential technique based on the first-principles density-functional theory (DFT). The calculated equilibrium lattice parameters are in agreement with the previous works. From the band structure, the effective masses and optical properties are obtained. The calculated band structure shows that monoclinic HfO2has indirect band gap and all of the effective masses of electrons and holes are less than that of a free electron. The peaks position distributions of imaginary parts of the complex dielectric function have been explained according to the theory of crystal-field and molecular-orbital bonding.


RSC Advances ◽  
2014 ◽  
Vol 4 (96) ◽  
pp. 53570-53574 ◽  
Author(s):  
Yin Wei ◽  
Hongjie Wang ◽  
Xuefeng Lu ◽  
Jiangbo Wen ◽  
Min Niu ◽  
...  

Electronic structure and optical properties of silicon nitride adsorbed by rare earths are explored by density functional theory.


2014 ◽  
Vol 13 (08) ◽  
pp. 1450070 ◽  
Author(s):  
Xingxiang Ruan ◽  
Fuchun Zhang ◽  
Weihu Zhang

The In -doped GaN is investigated by first-principles calculations of plane wave ultra-soft pseudo-potential method based on the density functional theory (DFT). The band structure, electronic structure, density of states and optical properties are investigated. The results indicate that the band-gap becomes narrower and the absorption edge of optical properties is red-shifted with the increase in In -doped concentration. Meanwhile, the visible region has strong absorption properties, and the significant absorption peaks are observed near 3.0 eV and 6.1 eV. The other peaks correspond to the wavelength of absorption spectra from the ultraviolet portion extending to the infrared portion, which almost covers the entire solar spectrum. The studied results show that In -doped GaN can be applied as solar cell and transparent conductivity material.


2021 ◽  
pp. X
Author(s):  
Hongbo TANG ◽  
Qiuyue LI ◽  
Jian ZHOU ◽  
Lihua XIAO ◽  
Ping PENG

Received 03 January 2020; accepted 17 June 2020 We have investigated the optical properties of La (0, 0.125, 0.250) doped YB6 by means of first-principles calculations within the framework of density functional theory. It was found that electronic and optical properties of YB6 crystals varied remarkably when Y atoms were replaced with La atoms. Furthermore, with increasing content of La in YB6 crystals from 12.5 % to 25 % reflectivity and absorption coefficient of near infrared light decreased obviously, while the transmittance was enhanced.


2014 ◽  
Vol 941-944 ◽  
pp. 658-661
Author(s):  
Lan Li Chen ◽  
Hong Duo Hu ◽  
Zhi Hua Xiong

A detailed first-principles study of electronic structure and optical properties of Nd-doping ZnO with various concentrations of Nd was performed using density functional theory. The results show that the band gap of Nd-doping ZnO slightly widens with the increasing Nd concentration, this is because the conduction band undergoes a greater shift toward the lower-energy region than the valence band, which is agreement with experimental results. Furthermore, in comparison to pure-ZnO, the Fermi level shifts into the conduction band after Nd-doping ZnO. And the calculated result of imaginary part of dielectric function of Nd-doping ZnO shows that there is a sharp peak in the lower-energy region, which is due to the electrons transition between d-d orbital of Nd atom.


2016 ◽  
Vol 30 (07) ◽  
pp. 1650091 ◽  
Author(s):  
Luomeng Chao ◽  
Lihong Bao ◽  
Wei Wei ◽  
O. Tegus

The optical properties of Yb-doped LaB6 have been investigated by first-principles calculations within the framework of density functional theory. The results show that the Yb [Formula: see text] states at near Fermi surface affect their optical properties and the Yb-doping leads to a reduction of the plasmon energy of LaB6, i.e. a redshift of the position of transmission peak in the visible-near infrared region. This study offers a theoretical prediction for the design and application of Yb-doped LaB6 as an optoelectronic material.


2018 ◽  
Vol 787 ◽  
pp. 9-15
Author(s):  
Xian Bin Zhang ◽  
Wen Jie Wu ◽  
Ning Kang Deng ◽  
Xu Yan Wei ◽  
Guan Qi Wang

The electronic structure and optical properties of GaP were calculated using generalized gradients in density functional theory. The Bonn effective charge, optical frequency dielectric constant and the LO-TO splitting value were calculated by density functional theory perturbation method.


Sign in / Sign up

Export Citation Format

Share Document