Influence of post-deposition annealing time on oxygen gas sensing behaviour of Al/La0·50Ce0·50O1·75/Si metal-oxide-semiconductor capacitor

2014 ◽  
Vol 18 (sup6) ◽  
pp. S6-490-S6-494 ◽  
Author(s):  
W. F. Lim ◽  
K. Y. Cheong
Keyword(s):  
Metal Oxide ◽  
Annealing Time ◽  
Gas Sensing ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Post Deposition Annealing ◽  
Oxygen Gas ◽  
Post Deposition ◽  
Metal Oxide Semiconductor Capacitor

Effects of post-deposition annealing on sputtered SiO 2 /4H-SiC metal-oxide-semiconductor

2018 ◽  
Vol 139 ◽  
pp. 115-120 ◽  
Author(s):  
Suhyeong Lee ◽  
Young Seok Kim ◽  
Hong Jeon Kang ◽  
Hyunwoo Kim ◽  
Min-Woo Ha ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Post Deposition Annealing ◽  
Post Deposition

Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

2016 ◽  
Vol 858 ◽  
pp. 1178-1181
Author(s):  
Patrick Fiorenza ◽  
Giuseppe Greco ◽  
Ferdinando Iucolano ◽  
Antonino Parisi ◽  
Santo Reina ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Response Time ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Post Deposition Annealing ◽  
Mos Capacitors ◽  
Hydrogen Incorporation ◽  
Characteristic Response ◽  
Post Deposition

In this work, the different nature of trapping states in metal-oxide-semiconductor (MOS) capacitors fabricated on recessed AlGaN/GaN heterostructures has been investigated. In particular, the origin of both fast and slow states has been elucidated by frequency dependent conductance measurements. Using post deposition annealing in forming gas, which is known to induce hydrogen incorporation at the interface, allowed to ascribe the fast traps (with characteristic response time in the range of 5–50 μs) to SiO2/GaN interface states and the slow traps (50–100 μs) to “border traps” located few nanometers inside the SiO2 layer. The results can be useful to predict the behavior of GaN switching devices, like hybrid MOSHEMTs.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor

2019 ◽  
Vol 467-468 ◽  
pp. 1161-1169 ◽  
Author(s):  
Min Baik ◽  
Hang-Kyu Kang ◽  
Yu-Seon Kang ◽  
Kwang-Sik Jeong ◽  
Changmin Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Defect Generation ◽  
Electrical Stress ◽  
Metal Oxide Semiconductor Capacitor
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