Electron backscatter diffraction and orientation imaging microscopy

1997 ◽  
Vol 13 (1) ◽  
pp. 69-78 ◽  
Author(s):  
D. J. Dingley ◽  
D. P. Field
2002 ◽  
Vol 10 (3) ◽  
pp. 10-14 ◽  
Author(s):  
David J. Dingley ◽  
Stuart Wright ◽  
Mathew Nowell

Orientation Imaging Microscopy is currently the most rapidly growing combined metallographic and crystallographic technique today. The first OIM was recorded by Wright in 1991, and published soon after, Adams et al. (1993). The technique is based on the original works on Electron Backscatter Diffraction (EBSD) by Venables and Hariand (1973), and Dingiey (1984, 1987). By 1994 some number of papers on the subject had been published. At the time of writing the authors are aware of over 600 publications that have utilized the technique and there are in excess of 400 systems in use worldwide.


2014 ◽  
Vol 20 (4) ◽  
pp. 1276-1283
Author(s):  
M. G. Rodríguez-Hernández ◽  
E. E. Martínez-Flores ◽  
G. Torres-Villaseñor ◽  
M. Dolores Escalera

AbstractSamples of Zn-21Al-2Cu alloy (Zinalco) that will be heavily deformed were prepared using five different manual mechanical metallographic methods. Samples were analyzed before tensile testing using the orientation imaging microscopy-electron backscatter diffraction (OIM-EBSD) technique. The effect of type and particle size during the final polishing stages for this material were studied in order to identify a method that produces a flat, damage free surface with a roughness of about 50 nm and clean from oxide layers, thereby producing diffraction patterns with high image quality (IQ) and adequate confidence indexes (CI). Our results show that final polishing with alumina and silica, as was previously suggested by other research groups for alloys that are difficult to prepare or alloys with low melting point, are not suitable for manual metallographic preparation of this alloy. Indexes of IQ and CI can be used to evaluate methods of metallographic preparation of samples studied using the OIM-EBSD technique.


1995 ◽  
Vol 403 ◽  
Author(s):  
D. J. Dingley ◽  
D. P. Field

AbstractAluminum thin films deposited onto silicon substrates coated with silicon dioxide or a layered structure of titanium and titanium nitride have been investigated using the combined techniques of electron backscatter diffraction and orientation imaging microscopy. By these methods the local texture and spatial distribution of texture components was established. It was observed that whereas the material exhibited an overall <111> texture with the in-plane direction <110> uniformly distributed, there were variations in the local texture and distribution of orientations with clustering of grains of similar orientation. Individual grains within the clusters were nearly perfect and varied in orientation by only a few degrees. The effective grain size differed greatly on whether the cluster size of similarly oriented grains or the diameter of individual grains within the cluster was considered to constitute the grain structure. No strong bias was found in favor of coincident site oriented grain pairs though in some cases the frequency of occurrence of low angle boundaries was less than is expected on a purely random basis. Additional experiments were carried out in order to establish the suitability of orientation imaging microscopy for microstructure characterization of interconnect lines in integrated semiconductor device technology.


Author(s):  
D.J. Dingley

Orientation Imaging Microscopy, OIM, is a relatively new technique which provides an image of the surface of polycrystalline material in which the grains are distinguished by their orientation differences, by the strain within them and the type of grain boundaries that separate them. The technique evolved from the work of Dingley and Venables on application of electron backscatter diffraction EBSD in the scanning electron microscope. In OIM, electron backscatter diffraction patterns are obtained successively at regularly spaced points on a sample surface. At each point, the diffraction pattern is captured, transferred to a computer and automatically indexed. Crystal orientation and diffraction line width are measured. Recent advances have been concerned with post data collection image processing.In the following illustration orientation imaging microscopy was used to investigate the microstructure of submicron aluminium, vapour deposited onto single crystal silicon coated with silicon dioxide. The experimental procedure described in reference 2 was adapted using a Philips XL 30 SEM fitted with a tungsten electron gun.


1997 ◽  
Vol 3 (S2) ◽  
pp. 561-562
Author(s):  
S.I. Wright ◽  
D.P. Field

Image analysis techniques coupled with crystallography computer codes have been used to index electron backscatter diffraction patterns (EBSPs). The ability to automatically obtain the crystallographic orientation from EBSPs coupled with computer control of the electron beam (or stage) in a scanning electron microscope (SEM) provides a much more complete description of the spatial distribution of crystallographic orientation in polycrystalline materials than has been previously attainable using conventional metallography techniques. Orientation data obtained using this technique can be used to form images reflecting the spatial arrangement of crystallographic orientation in a microstructure. Such images enable the topological features of a microstructure to be linked with the orientation characteristics. The formation of these images, as well as the data collection technique, is sometimes termed Orientation Imaging Microscopy (OIM). The utility of this technique for exploring the property/structure relationship in polycrystalline material has been demonstrated by numerous researchers. However, as yet, this technique has almost exclusively been applied to single phase materials.


1998 ◽  
Vol 523 ◽  
Author(s):  
D. J. Dingley ◽  
S. I. Wright ◽  
D. J. Dingley

AbstractThe two sister techniques, Electron Backscatter Diffraction and Orientation Imaging Microscopy which operate in a scanning electron microscope, are well established tools for the characterization of polycrystalline materials. Experiment has shown that the limiting resolution for mapping is the order of 0.1 microns. The basic techniques have been extended to include multiphase mapping. Whereas it has been possible to distinguish between phases of different crystal systems easily, it has not been possible to distinguish between phases that differ in lattice parameter by less than 5 %.An equivalent transmission electron microscope procedure has been developed. The technique couples standard hollow cone microscopy procedures with dark field microscopy. All possible dark field images that can be produced by tilting the electron beam are scanned to detect under what settings each crystal is brought into a diffracting condition. Subsequent analysis permits determination of both crystal phase and orientation.


2014 ◽  
Vol 783-786 ◽  
pp. 2689-2694
Author(s):  
Vàclav Sklenička ◽  
Petr Král ◽  
Jiří Dvořák ◽  
Marie Kvapilová ◽  
Milan Svoboda

The creep behavior of high purity aluminum and copper, Al-0.2wt.%Sc and Cu-0.2wt.%Zr alloys was examined after processing by equal-channel angular pressing (ECAP) with an emphasis on the link between microstructure and creep. The microstructure was revealed by electron backscatter diffraction (EBSD) and analyzed by stereological methods. Representative microstructural parameters were obtained using orientation imaging microscopy and EBSD on the relationship between creep behavior and microstructure.


2017 ◽  
Vol 23 (S1) ◽  
pp. 1522-1523
Author(s):  
G. Naresh-Kumar ◽  
S. Vespucci ◽  
A. Vilalta-Clemente ◽  
H. Jussila ◽  
A. Winkelmann ◽  
...  

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