Microstructure Evolution and Creep Behavior in ECAP Processed Metallic Materials

2014 ◽  
Vol 783-786 ◽  
pp. 2689-2694
Author(s):  
Vàclav Sklenička ◽  
Petr Král ◽  
Jiří Dvořák ◽  
Marie Kvapilová ◽  
Milan Svoboda
Keyword(s):  
Creep Behavior ◽  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Microstructural Parameters ◽  
Orientation Imaging ◽  
Angular Pressing ◽  
High Purity Aluminum ◽  
Backscatter Diffraction ◽  
The Relationship ◽  
Zr Alloys

The creep behavior of high purity aluminum and copper, Al-0.2wt.%Sc and Cu-0.2wt.%Zr alloys was examined after processing by equal-channel angular pressing (ECAP) with an emphasis on the link between microstructure and creep. The microstructure was revealed by electron backscatter diffraction (EBSD) and analyzed by stereological methods. Representative microstructural parameters were obtained using orientation imaging microscopy and EBSD on the relationship between creep behavior and microstructure.

scholarly journals Fast Orientation Imaging Microscropy

2002 ◽  
Vol 10 (3) ◽  
pp. 10-14 ◽  
Author(s):  
David J. Dingley ◽  
Stuart Wright ◽  
Mathew Nowell
Keyword(s):  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Orientation Imaging ◽  
Electron Backscatter ◽  
Original Works ◽  
The Subject ◽  
Backscatter Diffraction

Orientation Imaging Microscopy is currently the most rapidly growing combined metallographic and crystallographic technique today. The first OIM was recorded by Wright in 1991, and published soon after, Adams et al. (1993). The technique is based on the original works on Electron Backscatter Diffraction (EBSD) by Venables and Hariand (1973), and Dingiey (1984, 1987). By 1994 some number of papers on the subject had been published. At the time of writing the authors are aware of over 600 publications that have utilized the technique and there are in excess of 400 systems in use worldwide.

Crystallographic Mapping in Scanning and Transmission Electron Micrsocopy with Application to Semiconductor Materials

1998 ◽  
Vol 523 ◽  
Author(s):  
D. J. Dingley ◽  
S. I. Wright ◽  
D. J. Dingley
Keyword(s):  
Electron Microscope ◽  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Lattice Parameter ◽  
Dark Field ◽  
Polycrystalline Materials ◽  
Orientation Imaging ◽  
Transmission Electron ◽  
Dark Field Microscopy ◽  
Backscatter Diffraction

AbstractThe two sister techniques, Electron Backscatter Diffraction and Orientation Imaging Microscopy which operate in a scanning electron microscope, are well established tools for the characterization of polycrystalline materials. Experiment has shown that the limiting resolution for mapping is the order of 0.1 microns. The basic techniques have been extended to include multiphase mapping. Whereas it has been possible to distinguish between phases of different crystal systems easily, it has not been possible to distinguish between phases that differ in lattice parameter by less than 5 %.An equivalent transmission electron microscope procedure has been developed. The technique couples standard hollow cone microscopy procedures with dark field microscopy. All possible dark field images that can be produced by tilting the electron beam are scanned to detect under what settings each crystal is brought into a diffracting condition. Subsequent analysis permits determination of both crystal phase and orientation.

Influence of Microstructure on Aggressive Chemical Mechanical Planarization Processes for Thick Copper Films

2007 ◽  
Vol 991 ◽  
Author(s):  
Patrick J. Andersen ◽  
Megan Frary
Keyword(s):  
Grain Boundaries ◽  
Electron Backscatter Diffraction ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Coincidence Site Lattice ◽  
Surface Orientation ◽  
Copper Films ◽  
Microstructural Parameters ◽  
Backscatter Diffraction ◽  
The Relationship

ABSTRACTNovel die-stacking schema using through-wafer vias may require thick electrodeposited copper and aggressive first-step chemical mechanical planarization (CMP). However, the effect of microstructural parameters, including surface orientation and grain size, on the CMP behavior of thick electrodeposited copper is not well understood. Here we explore the relationship be-tween the surface orientation of copper grains and local CMP removal parameters using electron backscatter diffraction and topography correlation techniques. In the present work, solid copper disks are studied which are annealed to produce samples with differing grain sizes. In addition, aggressive CMP is performed on copper films (30 μm) electrodeposited on silicon. At the bulk level, the slurry composition is found to have the greatest effect on the removal rate and surface roughness. At the microstructural level, the nature of the grain boundaries (e.g. coincidence site lattice (CSL) vs. non-CSL boundaries) is shown to impact the depth of grooving at the grain boundaries. A relationship between surface orientation and local removal rate is found.

Microstructures of Aluminum and Copper Single Crystals Processed by Equal-Channel Angular Pressing

2010 ◽  
Vol 638-642 ◽  
pp. 1946-1951 ◽  
Author(s):  
Minoru Furukawa ◽  
Z. Horita ◽  
Terence G. Langdon
Keyword(s):  
Single Crystals ◽  
Equal Channel Angular Pressing ◽  
Orientation Imaging Microscopy ◽  
Orientation Imaging ◽  
Angular Pressing ◽  
Transmission Electron ◽  
Shear Theory ◽  
High Purity Aluminum ◽  
Copper Single Crystals ◽  
Shear Factors

High purity aluminum (Al) and copper (Cu) single crystals of different crystallographic orientations were processed for one pass by equal-channel angular pressing (ECAP). The deformed structures were examined using orientation imaging microscopy (OIM) and transmission electron microscopy (TEM). This paper examines the experimental results in terms of the values of the shear factors based on simple shear theory.

Metallographic Preparation of Zn-21Al-2Cu Alloy for Analysis by Electron Backscatter Diffraction (EBSD)

2014 ◽  
Vol 20 (4) ◽  
pp. 1276-1283
Author(s):  
M. G. Rodríguez-Hernández ◽  
E. E. Martínez-Flores ◽  
G. Torres-Villaseñor ◽  
M. Dolores Escalera
Keyword(s):  
Tensile Testing ◽  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Research Groups ◽  
Orientation Imaging ◽  
Electron Backscatter ◽  
Metallographic Preparation ◽  
Ebsd Technique ◽  
Diffraction Patterns ◽  
Backscatter Diffraction

AbstractSamples of Zn-21Al-2Cu alloy (Zinalco) that will be heavily deformed were prepared using five different manual mechanical metallographic methods. Samples were analyzed before tensile testing using the orientation imaging microscopy-electron backscatter diffraction (OIM-EBSD) technique. The effect of type and particle size during the final polishing stages for this material were studied in order to identify a method that produces a flat, damage free surface with a roughness of about 50 nm and clean from oxide layers, thereby producing diffraction patterns with high image quality (IQ) and adequate confidence indexes (CI). Our results show that final polishing with alumina and silica, as was previously suggested by other research groups for alloys that are difficult to prepare or alloys with low melting point, are not suitable for manual metallographic preparation of this alloy. Indexes of IQ and CI can be used to evaluate methods of metallographic preparation of samples studied using the OIM-EBSD technique.

EDS Assisted Phase Differentiation in Orientation Imaging Microscopy

2006 ◽  
Vol 509 ◽  
pp. 11-16 ◽  
Author(s):  
Stuart I. Wright ◽  
Matthew M. Nowell
Keyword(s):  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Polycrystalline Materials ◽  
Crystallographic Structure ◽  
Orientation Relationships ◽  
Multiphase Materials ◽  
Orientation Imaging ◽  
Ebsd Data ◽  
Phase Differentiation ◽  
Backscatter Diffraction

Automated Electron Backscatter Diffraction (EBSD) or Orientation Imaging Microscopy (OIM) has proven to be a viable technique for investigating microtexture in polycrystalline materials. It is particularly useful for investigating orientation relationships between phases in multiphase materials. However, when phases do not significantly vary in crystallographic structure, OIM is limited in its capability to reliably differentiate between phases. Through simultaneous collection of EBSD data and chemical data via X-Ray Energy Dispersive Spectroscopy (EDS) it is possible to dramatically improve upon the phase differentiation capabilities of either technique individually. This presentation will introduce a methodology for combining the two techniques as well as show a few example applications.

Investigation of Aluminum Thin Films Using Electron Backscatter Diffraction and the New Technique of Orientation Imaging Microscopy

1995 ◽  
Vol 403 ◽  
Author(s):  
D. J. Dingley ◽  
D. P. Field
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Grain Structure ◽  
Local Texture ◽  
Orientation Imaging ◽  
Electron Backscatter ◽  
Individual Grains ◽  
Backscatter Diffraction

AbstractAluminum thin films deposited onto silicon substrates coated with silicon dioxide or a layered structure of titanium and titanium nitride have been investigated using the combined techniques of electron backscatter diffraction and orientation imaging microscopy. By these methods the local texture and spatial distribution of texture components was established. It was observed that whereas the material exhibited an overall <111> texture with the in-plane direction <110> uniformly distributed, there were variations in the local texture and distribution of orientations with clustering of grains of similar orientation. Individual grains within the clusters were nearly perfect and varied in orientation by only a few degrees. The effective grain size differed greatly on whether the cluster size of similarly oriented grains or the diameter of individual grains within the cluster was considered to constitute the grain structure. No strong bias was found in favor of coincident site oriented grain pairs though in some cases the frequency of occurrence of low angle boundaries was less than is expected on a purely random basis. Additional experiments were carried out in order to establish the suitability of orientation imaging microscopy for microstructure characterization of interconnect lines in integrated semiconductor device technology.

Application of Equal-Channel Angular Pressing to Aluminum and Copper Single Crystals

2007 ◽  
Vol 539-543 ◽  
pp. 2853-2858 ◽  
Author(s):  
Minoru Furukawa ◽  
Z. Horita ◽  
Terence G. Langdon
Keyword(s):  
Electron Microscopy ◽  
Single Crystals ◽  
Equal Channel Angular Pressing ◽  
Orientation Imaging Microscopy ◽  
Orientation Imaging ◽  
Angular Pressing ◽  
Transmission Electron ◽  
High Purity Aluminum ◽  
Copper Single Crystals ◽  
Crystallographic Orientations

This paper describes experiments in which high purity aluminum (Al) and copper (Cu) single crystals of different crystallographic orientations were processed for one pass by equal-channel angular pressing (ECAP). The deformed structures were examined using optical microscopy (OM), orientation imaging microscopy (OIM) and transmission electron microscopy (TEM). The results for Al single crystals are compared with those for Cu single crystals.

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