Investigation of Aluminum Thin Films Using Electron Backscatter Diffraction and the New Technique of Orientation Imaging Microscopy

1995 ◽  
Vol 403 ◽  
Author(s):  
D. J. Dingley ◽  
D. P. Field
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Grain Structure ◽  
Local Texture ◽  
Orientation Imaging ◽  
Electron Backscatter ◽  
Individual Grains ◽  
Backscatter Diffraction

AbstractAluminum thin films deposited onto silicon substrates coated with silicon dioxide or a layered structure of titanium and titanium nitride have been investigated using the combined techniques of electron backscatter diffraction and orientation imaging microscopy. By these methods the local texture and spatial distribution of texture components was established. It was observed that whereas the material exhibited an overall <111> texture with the in-plane direction <110> uniformly distributed, there were variations in the local texture and distribution of orientations with clustering of grains of similar orientation. Individual grains within the clusters were nearly perfect and varied in orientation by only a few degrees. The effective grain size differed greatly on whether the cluster size of similarly oriented grains or the diameter of individual grains within the cluster was considered to constitute the grain structure. No strong bias was found in favor of coincident site oriented grain pairs though in some cases the frequency of occurrence of low angle boundaries was less than is expected on a purely random basis. Additional experiments were carried out in order to establish the suitability of orientation imaging microscopy for microstructure characterization of interconnect lines in integrated semiconductor device technology.

scholarly journals Fast Orientation Imaging Microscropy

2002 ◽  
Vol 10 (3) ◽  
pp. 10-14 ◽  
Author(s):  
David J. Dingley ◽  
Stuart Wright ◽  
Mathew Nowell
Keyword(s):  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Orientation Imaging ◽  
Electron Backscatter ◽  
Original Works ◽  
The Subject ◽  
Backscatter Diffraction

Orientation Imaging Microscopy is currently the most rapidly growing combined metallographic and crystallographic technique today. The first OIM was recorded by Wright in 1991, and published soon after, Adams et al. (1993). The technique is based on the original works on Electron Backscatter Diffraction (EBSD) by Venables and Hariand (1973), and Dingiey (1984, 1987). By 1994 some number of papers on the subject had been published. At the time of writing the authors are aware of over 600 publications that have utilized the technique and there are in excess of 400 systems in use worldwide.

Characterization of Nanostructured Electrodeposited NiCo Samples by use of Electron Backscatter Diffraction (EBSD)

2005 ◽  
Vol 880 ◽  
Author(s):  
Alice Bastos ◽  
Dierk Raabe ◽  
Stefan Zaefferer ◽  
Christopher Schuh
Keyword(s):  
Grain Size ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Growth Direction ◽  
Grain Structure ◽  
Local Texture ◽  
Average Grain Size ◽  
Electron Backscatter ◽  
Backscatter Diffraction

AbstractA Cobalt-20wt.% Nickel polycrystal produced by electrodeposition has been investigated in planar and cross sections using a high resolution scanning electron microscope. The local texture, grain size, amount of phase and grain boundaries, were characterized by Electron Backscatter Diffraction (EBSD). The average grain size perpendicular to the grain growth direction was 400 nm. Parallel to it, a pronounced bimodal grain structure was observed with grains reaching more than 10 μm and grains of approximately 800 nm diameter.

Metallographic Preparation of Zn-21Al-2Cu Alloy for Analysis by Electron Backscatter Diffraction (EBSD)

2014 ◽  
Vol 20 (4) ◽  
pp. 1276-1283
Author(s):  
M. G. Rodríguez-Hernández ◽  
E. E. Martínez-Flores ◽  
G. Torres-Villaseñor ◽  
M. Dolores Escalera
Keyword(s):  
Tensile Testing ◽  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Research Groups ◽  
Orientation Imaging ◽  
Electron Backscatter ◽  
Metallographic Preparation ◽  
Ebsd Technique ◽  
Diffraction Patterns ◽  
Backscatter Diffraction

AbstractSamples of Zn-21Al-2Cu alloy (Zinalco) that will be heavily deformed were prepared using five different manual mechanical metallographic methods. Samples were analyzed before tensile testing using the orientation imaging microscopy-electron backscatter diffraction (OIM-EBSD) technique. The effect of type and particle size during the final polishing stages for this material were studied in order to identify a method that produces a flat, damage free surface with a roughness of about 50 nm and clean from oxide layers, thereby producing diffraction patterns with high image quality (IQ) and adequate confidence indexes (CI). Our results show that final polishing with alumina and silica, as was previously suggested by other research groups for alloys that are difficult to prepare or alloys with low melting point, are not suitable for manual metallographic preparation of this alloy. Indexes of IQ and CI can be used to evaluate methods of metallographic preparation of samples studied using the OIM-EBSD technique.

Further advances in orientation imaging microscopy

1995 ◽  
Vol 53 ◽  
pp. 98-99
Author(s):  
D.J. Dingley
Keyword(s):  
Electron Backscatter Diffraction ◽  
Orientation Imaging Microscopy ◽  
Single Crystal Silicon ◽  
Sample Surface ◽  
Electron Gun ◽  
Crystal Silicon ◽  
Orientation Imaging ◽  
Electron Backscatter ◽  
Diffraction Patterns ◽  
Backscatter Diffraction

Orientation Imaging Microscopy, OIM, is a relatively new technique which provides an image of the surface of polycrystalline material in which the grains are distinguished by their orientation differences, by the strain within them and the type of grain boundaries that separate them. The technique evolved from the work of Dingley and Venables on application of electron backscatter diffraction EBSD in the scanning electron microscope. In OIM, electron backscatter diffraction patterns are obtained successively at regularly spaced points on a sample surface. At each point, the diffraction pattern is captured, transferred to a computer and automatically indexed. Crystal orientation and diffraction line width are measured. Recent advances have been concerned with post data collection image processing.In the following illustration orientation imaging microscopy was used to investigate the microstructure of submicron aluminium, vapour deposited onto single crystal silicon coated with silicon dioxide. The experimental procedure described in reference 2 was adapted using a Philips XL 30 SEM fitted with a tungsten electron gun.

Cross Section Analysis of Cu Filled TSVs Based on High Throughput Plasma-FIB Milling

2012 ◽  
Author(s):  
Frank Altmann ◽  
Jens Beyersdorfer ◽  
Jan Schischka ◽  
Michael Krause ◽  
German Franz ◽  
...  
Keyword(s):  
High Resolution ◽  
Cross Section ◽  
High Throughput ◽  
Cross Sections ◽  
Electron Backscatter Diffraction ◽  
Grain Structure ◽  
Electron Backscatter ◽  
Section Surface ◽  
Backscatter Diffraction ◽  
Section Analysis

Abstract In this paper the new Vion™ Plasma-FIB system, developed by FEI, is evaluated for cross sectioning of Cu filled Through Silicon Via (TSV) interconnects. The aim of the study presented in this paper is to evaluate and optimise different Plasma-FIB (P-FIB) milling strategies in terms of performance and cross section surface quality. The sufficient preservation of microstructures within cross sections is crucial for subsequent Electron Backscatter Diffraction (EBSD) grain structure analyses and a high resolution interface characterisation by TEM.

Use of Electron Backscatter Diffraction Technique in Characterization of 6XXX Aluminum Alloy Extrusions

2000 ◽  
Vol 6 (S2) ◽  
pp. 954-955
Author(s):  
Steven R. Claves ◽  
Wojciech Z. Misiolek ◽  
William H. Van Geertruyden ◽  
David B. Williams
Keyword(s):  
Electron Backscatter Diffraction ◽  
Metal Flow ◽  
Extrusion Process ◽  
Cross Sectional ◽  
Electron Backscattering Diffraction ◽  
Electron Backscatter ◽  
Individual Grains ◽  
Backscatter Diffraction ◽  
6Xxx Series

Electron Backscattering Diffraction (EBSD) is an important tool for analyzing the crystal grain orientation of a microstructure and can be used to formulate conclusions about microtexture, texture determined from individual grains. This technique has been used to study a 6xxx series aluminum alloy's response to the deformation of the extrusion process. Extrusion is the process by which a billet of material is forced, under high pressure, through a die. The material undergoes a significant decrease in cross sectional area, and is formed into a shape equivalent to the geometry of the die orifice. Different bearing lands are shown in shown in Figure 1. These surfaces form the part, and are designed to control the metal flow making it uniform through the die, thus yielding good mechanical properties. This research was focused on the resultant microstructure. The shaded regions of Figure 2 show the two surface regions where EBSD measurements were taken.

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