scholarly journals Silicon diffusion control in atomic-layer-deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer

2015 ◽  
Vol 10 (1) ◽  
Author(s):  
Xing Wang ◽  
Hong-Xia Liu ◽  
Chen-Xi Fei ◽  
Shu-Ying Yin ◽  
Xiao-Jiao Fan
Keyword(s):  
Barrier Layer ◽  
Atomic Layer ◽  
Diffusion Control ◽  
Gate Stacks ◽  
Silicon Diffusion

Sub-nanometer atomic layer deposited Al2O3 barrier layer for improving stability of nonfullerene organic solar cells

2021 ◽  
pp. 106351
Author(s):  
Shiwei Wu ◽  
Yanglin Zhao ◽  
Chi Wang ◽  
Shang Li ◽  
Renaud Bachelot ◽  
...  
Keyword(s):  
Solar Cells ◽  
Barrier Layer ◽  
Organic Solar Cells ◽  
Atomic Layer

scholarly journals Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

2016 ◽  
Vol 2016 ◽  
pp. 1-4 ◽  
Author(s):  
Z. N. Khan ◽  
S. Ahmed ◽  
M. Ali
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Device Fabrication ◽  
Process Window ◽  
Gate Stacks ◽  
Mos Capacitors ◽  
Hafnium Silicate ◽  
Gate Electrodes ◽  
Layer Deposition ◽  
Tin Metal

Focusing on sub-10 nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal-oxide capacitors (MOSCAP) with carefully chosen Atomic Layer Deposition (ALD) process parameters. Gate element of the device has undergone a detailed postmetal annealed sequence ranging from 100°C to 1000°C. The applicability of ultrathin TiN on gate electrodes is established through current density versus voltage (J-V), resistance versus temperature (R-T), and permittivity versus temperature analysis. A higher process window starting from 600°C was intentionally chosen to understand the energy efficient behavior expected from ultrathin gate metallization and its unique physical state with shrinking thickness. The device characteristics in form of effective electronic mobility as a function of inverse charge density were also found better than those conventional gate stacks used for EOT scaling.

scholarly journals Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks

2010 ◽  
Vol 96 (18) ◽  
pp. 182901 ◽  
Author(s):  
C. Wiemer ◽  
L. Lamagna ◽  
S. Baldovino ◽  
M. Perego ◽  
S. Schamm-Chardon ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Gate Stacks ◽  
Layer Deposition ◽  
Er Doped

Atomic layer-deposited platinum in high-k/metal gate stacks

2009 ◽  
Vol 24 (12) ◽  
pp. 125013 ◽  
Author(s):  
Christoph Henkel ◽  
Stephan Abermann ◽  
Ole Bethge ◽  
Emmerich Bertagnolli
Keyword(s):  
Atomic Layer ◽  
Gate Stacks ◽  
Metal Gate ◽  
High K

Reduction of Threshold Voltage by Diffusion Control Technique in p-MISFETs Using Poly-Si/TiN/HfSiON Gate Stacks

2007 ◽  
Vol 28 (10) ◽  
pp. 868-870
Author(s):  
Takaaki Kawahara ◽  
Yukio Nishida ◽  
Shinsuke Sakashita ◽  
Masaharu Mizutani ◽  
Masao Inoue ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Control Technique ◽  
Diffusion Control ◽  
Gate Stacks
Sign in / Sign up

Export Citation Format

Share Document