Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology
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AbstractAn on-wafer micro-detector for in situ EUV (wavelength of 13.5 nm) detection featuring FinFET CMOS compatibility, 1 T pixel and battery-less sensing is demonstrated. Moreover, the detection results can be written in the in-pixel storage node for days, enabling off-line and non-destructive reading. The high spatial resolution micro-detectors can be used to extract the actual parameters of the incident EUV on wafers, including light intensity, exposure time and energy, key to optimization of lithographic processes in 5 nm FinFET technology and beyond.
2005 ◽
Vol 233
(3-4)
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pp. 375-390
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2017 ◽
Vol 32
(5)
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pp. 975-986
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2013 ◽
Vol 6
(3)
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pp. 4183-4221
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