Measurement of interface roughness independently of interface diffuseness: application to magnetic multilayers

Author(s):  
M J Hÿtch ◽  
M G Walls ◽  
E Chassaing ◽  
J-P Chevalier
Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.


Author(s):  
Amanda K. Petford-Long ◽  
A. Cerezo ◽  
M.G. Hetherington

The fabrication of multilayer films (MLF) with layer thicknesses down to one monolayer has led to the development of materials with unique properties not found in bulk materials. The properties of interest depend critically on the structure and composition of the films, with the interfacial regions between the layers being of particular importance. There are a number of magnetic MLF systems based on Co, several of which have potential applications as perpendicular magnetic (e.g Co/Cr) or magneto-optic (e.g. Co/Pt) recording media. Of particular concern are the effects of parameters such as crystallographic texture and interface roughness, which are determined by the fabrication conditions, on magnetic properties and structure.In this study we have fabricated Co-based MLF by UHV thermal evaporation in the prechamber of an atom probe field-ion microscope (AP). The multilayers were deposited simultaneously onto cobalt field-ion specimens (for AP and position-sensitive atom probe (POSAP) microanalysis without exposure to atmosphere) and onto the flat (001) surface of oxidised silicon wafers (for subsequent study in cross-section using high-resolution electron microscopy (HREM) in a JEOL 4000EX. Deposi-tion was from W filaments loaded with material in the form of wire (Co, Fe, Ni, Pt and Au) or flakes (Cr). The base pressure in the chamber was around 8×10−8 torr during deposition with a typical deposition rate of 0.05 - 0.2nm/s.


1997 ◽  
Vol 7 (11) ◽  
pp. 1299-1304 ◽  
Author(s):  
P. Weinberger ◽  
C. Sommers ◽  
U. Pustogowa ◽  
L. Szunyogh ◽  
B. Újfalussy

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.


2002 ◽  
Vol 715 ◽  
Author(s):  
J. Krc ◽  
M. Zeman ◽  
O. Kluth ◽  
F. Smole ◽  
M. Topic

AbstractThe descriptive scattering parameters, haze and angular distribution functions of textured ZnO:Al transparent conductive oxides with different surface roughness are measured. An approach to determine the scattering parameters of all internal interfaces in p-i-n a-Si:H solar cells deposited on the glass/ZnO:Al substrates is presented. Using the determined scattering parameters as the input parameters of the optical model, a good agreement between the measured and simulated quantum efficiencies of the p-i-n a-Si:H solar cells with different interface roughness is achieved.


Author(s):  
Yongkai Zhou ◽  
Jie Zhu ◽  
Han Wei Teo ◽  
ACT Quah ◽  
Lei Zhu ◽  
...  

Abstract In this paper, two failure analysis case studies are presented to demonstrate the importance of sample preparation procedures to successful failure analyses. Case study 1 establishes that Palladium (Pd) cannot be used as pre-FIB coating for SiO2 thickness measurement due to the spontaneously Pd silicide formation at the SiO2/Si interface. Platinum (Pt) is thus recommended, in spite of the Pt/SiO2 interface roughness, as the pre-FIB coating in this application. In the second case study, the dual-directional TEM inspection method is applied to characterize the profile of the “invisible” tungsten residue defect. The tungsten residue appears invisible in the planeview specimen due to the low mass-thickness contrast. It is then revealed in the cross-sectional TEM inspection.


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