An examination of dislocations in Si-doped LEC GaAs by double crystal x-ray topography, SEM cathodoluminescence and chemical etching

2020 ◽  
pp. 371-376
Author(s):  
G T Brown ◽  
C A Warwick ◽  
I M Young ◽  
G R Booker
Keyword(s):  
Chemical Etching ◽  
Double Crystal ◽  
X Ray ◽  
Lec Gaas ◽  
Si Doped

Investigation of the Homogeneity and Defect Structure in Semi-Insulating Lec GaAs Single Crystals by Synchrotron Radiation Double Crystal X-Ray Topography.

1984 ◽  
Vol 41 ◽  
Author(s):  
S J Barnett ◽  
B K Tanner ◽  
G. T. Brown
Keyword(s):  
Synchrotron Radiation ◽  
Single Crystals ◽  
Defect Structure ◽  
Deep Level ◽  
Lattice Parameter ◽  
Double Crystal ◽  
X Ray ◽  
Lec Gaas ◽  
Order Of Magnitude ◽  
Small Lattice

AbstractThe high intensity and large beam size of a synchrotron radiation source have been exploited in order to obtain double crystal X-ray topographs of whole 2in. and 3in. slices of semi-insulating LEC GaAs single crystals. Exposure times, typically 30 minutes for high resolution topographs, are at least one order of magnitude down on those required when using a conventional source. Variations in relative lattice parameter and lattice tilt have been measured as a function of position on the slice. The defect structure has been imaged and dislocations are seen in cellular configurations, slip bands and linear arrays (lineage), the latter of which are shown to be associated with small lattice tilts, typically 30”. The defect structure revealed on the topographs has been correlated with 1μm infrared absorption micrographs which are believed to represent the concentration of the dominant deep level EL2.

A DOUBLE CRYSTAL MONOCHROMATOR FOR SOFT X-RAY BEAM LINE OF UVSOR

1986 ◽  
Vol 47 (C8) ◽  
pp. C8-135-C8-137
Author(s):  
T. MURATA ◽  
T. MATSUKAWA ◽  
M. MORI ◽  
M. OBASHI ◽  
S.-I. NAO-E ◽  
...  
Keyword(s):  
Beam Line ◽  
Double Crystal ◽  
X Ray ◽  
Double Crystal Monochromator

Double Crystal X‐Ray Dilatometer Using Continuous Radiation

1971 ◽  
Vol 42 (2) ◽  
pp. 196-199 ◽  
Author(s):  
Virgil E. Bottom ◽  
Renê Ayres Carvalho
Keyword(s):  
Double Crystal ◽  
X Ray ◽  
Continuous Radiation

Strain Shift Coefficients for Phonons in Si-Ge Heterostructures

1991 ◽  
Vol 239 ◽  
Author(s):  
J.-M. Baribeau ◽  
D. J. Lockwood
Keyword(s):  
Molecular Beam ◽  
Composition Dependence ◽  
Vibration Mode ◽  
Phonon Frequency ◽  
Longitudinal Optical ◽  
Stress Factor ◽  
Double Crystal ◽  
Raman Scattering Spectroscopy ◽  
X Ray ◽  
Shift Coefficient

ABSTRACTStrain shift coefficient measurements for longitudinal optical phonons in molecular beam epitaxy grown metastable pseudomorphic Si1−xGex layers on (100) Si (0 < x < 0.35) and Ge (0.80 < x < 1) are reported. Strain in partially relaxed annealed specimens was obtained by double-crystal x-ray diffractometry and the corresponding strain phonon shift was measured by Raman scattering spectroscopy. For epilayers grown on Si it was found that the epilayer Si-Si phonon frequency varies linearly with strain. The magnitude of the strain shift coefficient b however showed a small composition dependence varying from b ≈ -700 cm-1 at x = 0 to b ≈ -950 cm-1 at x = 0.35, corresponding to a stress factor τ = 0.40 + 0.57x: + 0.13x2 cm-1/kbar. For the Ge-Ge vibration mode in epilayers grown on Ge, b decreased from ∼-425 cm-1 at x = 1 to ∼-500 cm-1 at x = 0.8, corresponding to a stress factor τ ≈ 0.52 – 0.14x - 0.08x2 cm-1/kbar.

Assessment of Thin Heteroepitaxial Layers Using Skew Angle Asymmetrical X-Ray Double Crystal Diffraction

1988 ◽  
Vol 138 ◽  
Author(s):  
S. J. Miles ◽  
G. S. Green ◽  
B. K. Tanner ◽  
M. A. G. Halliwell ◽  
M. H. Lyons
Keyword(s):  
Skew Angle ◽  
Double Crystal ◽  
X Ray ◽  
Heteroepitaxial Layers

Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy

1995 ◽  
Vol 399 ◽  
Author(s):  
C.S. Kim ◽  
S.K. Noh ◽  
H.J. Lee ◽  
Y.K. Cho ◽  
Y.I. Kim ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Rotation Angle ◽  
Lattice Relaxation ◽  
High Dislocation Density ◽  
Sinusoidal Oscillation ◽  
Double Crystal ◽  
X Ray ◽  
Anisotropic Lattice

ABSTRACTWe have investigated anisotropic lattice relaxation and its mechanism of ZnSe epitaxial layer grown on (001) GaAs substrate by MBE. Double-crystal X-ray rocking curves for (004), {115} and {404} reflections were measured as a function of the azimuthal rotation angle of the sample. We observed the sinusoidal oscillation of the FWHM of the epilayer peak for (004) reflections due to the asymmetric dislocation density along two orthogonal <110> directions, and the direction of the maximum FWHM corresponding to high dislocation density is along [110]. In addition, the strain along [110] is smaller than that along [1-10], indicating that the layer suffered anisotropic lattice relaxation. The direction of larger relaxation([l-10]) is not consistent with that of high dislocation density([110]). The results suggest that the asymmetry in dislocation density is not responsible for the anisotropic relaxation of the ZnSe epilayer.

Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystals ◽  
Room Temperature ◽  
Defect Concentration ◽  
Double Crystal ◽  
X Ray ◽  
Positive Strain ◽  
Independent Coefficient ◽  
The Relationship ◽  
Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

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