scholarly journals Sox2 is required for olfactory pit formation and olfactory neurogenesis through BMP restriction and Hes5 upregulation

Development ◽  
2018 ◽  
Vol 145 (2) ◽  
pp. dev153791 ◽  
Author(s):  
Tamilarasan K. Panaliappan ◽  
Walter Wittmann ◽  
Vijay K. Jidigam ◽  
Sara Mercurio ◽  
Jessica A. Bertolini ◽  
...  
Keyword(s):  
Pit Formation ◽  
Olfactory Pit

scholarly journals Studies on pit formation on aluminum immersed in artificial waters

1968 ◽  
Vol 18 (11) ◽  
pp. 579-585 ◽  
Author(s):  
Kinya HORIBE
Keyword(s):  
Pit Formation

Scanning Tunneling Microscope Study of Etch Pits on Highly Oriented Pyrolytic Graphite Heated in an Atomic Absorption Electrothermal Analyzer

1997 ◽  
Vol 51 (12) ◽  
pp. 1896-1904 ◽  
Author(s):  
Kurt G. Vandervoort ◽  
Kristin N. McLain ◽  
David J. Butcher
Keyword(s):  
Elevated Temperatures ◽  
Pyrolytic Graphite ◽  
Reaction Rates ◽  
Surface Reactivity ◽  
Scanning Tunneling ◽  
Highly Oriented Pyrolytic Graphite ◽  
Tunneling Microscopy ◽  
Etch Pits ◽  
Pit Formation ◽  
Second Period

Scanning tunneling microscopy (STM) was used to elucidate monolayer etch pits that form on highly oriented pyrolytic graphite (HOPG) heated in an electrothermal analyzer. Pits form at elevated temperatures due to reactions between oxygen and exposed carbon edge atoms (defects) and additionally with intraplanar carbon atoms (through abstraction). Samples of HOPG without analyte or matrix modifier were placed in the depression of a pure pyrolytic graphite platform and heated by using standard analysis furnace programs. Under argon stop-flow conditions, pits form in less than a second at atomization temperatures equal to and above 1200 °C. With low argon flow rates (40 mL/min), pits formed at atomization temperatures equal to and greater than 1750 °C in less than a second. Quantitative pit formation rates were used to indicate oxygen partial pressure, which may be as high as ∼ 10−3 atm at 1200 °C. Reaction rates were used to predict surface degradation due to oxygen attack and determine that 1-μm depth normal to the surface would be removed by 200 successive 5-second-period furnace firings at 1200 °C. Implications for increases in surface reactivity and analyte intercalation are discussed.

Hydrogen as the cause of pit formation during laser recrystallization of silicon‐on‐insulator films

1989 ◽  
Vol 66 (9) ◽  
pp. 4444-4455 ◽  
Author(s):  
G. J. Willems ◽  
H. E. Maes
Keyword(s):  
Silicon On Insulator ◽  
Pit Formation ◽  
Laser Recrystallization

scholarly journals The Development of Olfactory Organ of Lissotriton Vulgaris (Amphibia, Caudata)

2015 ◽  
Vol 49 (6) ◽  
pp. 559-566 ◽  
Author(s):  
M. F. Kovtun ◽  
Ya. V. Stepanyuk
Keyword(s):  
Nasal Cavity ◽  
Olfactory Epithelium ◽  
Vomeronasal Organ ◽  
Developmental Period ◽  
Olfactory Organ ◽  
Peripheral Part ◽  
Lissotriton Vulgaris ◽  
Olfactory Analyzer ◽  
Gland Development ◽  
Olfactory Pit

Abstract The Development of Olfactory Organ of Lissotriton vulgaris (Amphibia, Caudata). Kovtun, M. F, Stepanyuk, Ya. V. - Using common histological methods, the morphogenesis of olfactory analyzer peripheral part of Lissotriton vulgaris (Amphibia, Caudata) was studied, during the developmental period starting with olfactory pit laying and finishing with definitive olfactory organ formation. Special attention is paid to vomeronasal organ and vomeronasal gland development. Reasoning from obtained data, we consider that vomeronasal organ emerged as the result of olfactory epithelium and nasal cavity differentiation.

Susceptor and Proximity Rapid Thermal Annealing of InP

1990 ◽  
Vol 181 ◽  
Author(s):  
A. Katz ◽  
S. J. Pearton ◽  
M. Geva
Keyword(s):  
Surface Morphology ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Substrate Surface ◽  
Effective Surface ◽  
Group V ◽  
Surface Protection ◽  
Pit Formation ◽  
Annealing Cycle ◽  
Inp Substrates

ABSTRACTAn intensive comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology, was carried out. The superiority of annealing within a susccptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750°C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration.

Investigation of Bias Voltage and Relative Humidity on Wear and Pit Formation at the Head–Disk Interface

2020 ◽  
Vol 56 (5) ◽  
pp. 1-7
Author(s):  
Tan D. Trinh ◽  
Christoph Schade ◽  
Michael Johnson ◽  
Frank E. Talke
Keyword(s):  
Relative Humidity ◽  
Bias Voltage ◽  
Head Disk Interface ◽  
Disk Interface ◽  
Pit Formation

Spatial Correlations in Growing Films

2000 ◽  
Vol 619 ◽  
Author(s):  
M.C. Bartelt
Keyword(s):  
Size Distribution ◽  
Lattice Gas ◽  
Mean Field ◽  
Film Deposition ◽  
Nucleation Theory ◽  
Spatial Correlations ◽  
Island Size ◽  
Pit Formation ◽  
Free Region ◽  
Lattice Gas Models

ABSTRACTDetailed analyses of non-equilibrium lattice-gas models of island nucleation and growth during film deposition (or etching) have been invaluable in elucidating basic issues in nucleation theory, deviations from mean-field predictions, and experimental observations. Particularly interesting and useful is the behavior of spatial correlations in the adlayer which develop during island (or pit) formation. In particular, a strong depletion in the population of island pairs at separations smaller than the average follows from depletion in the density of diffusing adspecies near islands. This feature delays percolation of clusters of coalesced islands. Another recently discovered and more subtle feature is a strong correlation between the width of the island-free region surrounding an island and the size and growth rate of that island. This direct correlation between island sizes and separations controls the shape of the island size distribution. If incorporated into rate-equation descriptions, it recovers the exact form of the scaling function for the island size distribution.

Etch pit formation by photoelectrochemical etching in II–VI Semiconductor compounds

1986 ◽  
Vol 19 (4) ◽  
pp. 393
Author(s):  
Victor Marcu ◽  
Reshef Tenne
Keyword(s):  
Photoelectrochemical Etching ◽  
Etch Pit ◽  
Pit Formation ◽  
Semiconductor Compounds

Kinetic Monte Carlo investigation of pit formation at the CaCO3(101̄4) surface-water interface

1997 ◽  
Vol 373 (2-3) ◽  
pp. 288-299 ◽  
Author(s):  
J.M. McCoy ◽  
John P. LaFemina
Keyword(s):  
Monte Carlo ◽  
Surface Water ◽  
Kinetic Monte Carlo ◽  
Water Interface ◽  
Pit Formation ◽  
Monte Carlo Investigation
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