Susceptor and Proximity Rapid Thermal Annealing of InP

1990 ◽  
Vol 181 ◽  
Author(s):  
A. Katz ◽  
S. J. Pearton ◽  
M. Geva
Keyword(s):  
Surface Morphology ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Substrate Surface ◽  
Effective Surface ◽  
Group V ◽  
Surface Protection ◽  
Pit Formation ◽  
Annealing Cycle ◽  
Inp Substrates

ABSTRACTAn intensive comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology, was carried out. The superiority of annealing within a susccptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750°C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration.

scholarly journals Rapid thermal annealing assisted stability and efficiency enhancement in a sputter deposited CuO photocathode

RSC Advances ◽  
2016 ◽  
Vol 6 (35) ◽  
pp. 29383-29390 ◽  
Author(s):  
Saeid Masudy-Panah ◽  
Roozbeh Siavash Moakhar ◽  
Chin Sheng Chua ◽  
Ajay Kushwaha ◽  
Ten It Wong ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Surface Morphology ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Efficiency Enhancement ◽  
Morphology Of Films ◽  
Sputter Deposited

A stable and efficient CuO based photocathode by tuning the crystallinity and surface morphology of films by rapid thermal treatment.

Co-Implantation of Si And Be in GaAs by Rapid Thermal Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
Tan-Hua Yu ◽  
Sujane Wang
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Process ◽  
Superior Performance ◽  
Rapid Thermal Annealing Process ◽  
Gaas Mesfet ◽  
Activation Efficiency ◽  
Annealing Cycle ◽  
Thermal Annealing Process ◽  
Dopant Redistribution

ABSTRACTA buried p-layer in GaAs MESFET channel is successfully formed by (Si,Be) co-implantation and rapid thermal annealing process. The annealing cycle is optimized to activate Si and Be simultaneously and to minimize the dopant redistribution for precise dopant control. As a result, more than 80% activation efficiency for both Si and Be, as well as the greatly improved doping abruptness from 85 nm/decade to 65 nm/decade are achieved. Devices are fabricated and superior performance including sharper pinchoff, an increase of RF gain by 2–3dB and a 40% decrease in backgating effect is observed.

scholarly journals The Effect of Co-Implantation on the Electrical Activity of Implanted Carbon in GaAs

1991 ◽  
Vol 240 ◽  
Author(s):  
A. J. Moll ◽  
W. Walukiewicz ◽  
K. M. Yu ◽  
W. L. Hansen ◽  
E. E. Haller
Keyword(s):  
Electrical Properties ◽  
Electrical Activity ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Systematic Study ◽  
Active Carbon ◽  
Amorphous Layer ◽  
Group V ◽  
Group Iii ◽  
Carbon Impurities

ABSTRACTWe have undertaken a systematic study of the effect of co-implantation on the electrical properties of C implanted in GaAs. Two effects have been studied, the additional damage caused by co-implantation and the stoichiometry in the implanted layer. A series of co-implant ions were used: group III (B, Al, Ga), group V (N, P, As) and noble gases (Ar, Kr). Co-implantation of ions which create an amorphous layer was found to increase the electrical activity of C Once damage was created, maintaining stoichiometric balance by co-implantation of a group III further increased the fraction of electrically active carbon impurities. Co-implantation of Ga and rapid thermal annealing at 950°C for 10 s resulted in carbon activation as high as 68%, the highest value ever reported.

The Effects of Ion Beam Mixing on Rapid Thermal Annealed Ohmic Contacts to N-GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
Seemi Kazmi ◽  
Roman V. Kruzelecky ◽  
David A. Thompson
Keyword(s):  
Surface Morphology ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Depth Profiling ◽  
Specific Contact Resistance ◽  
Ion Beam Mixing ◽  
Specific Contact

ABSTRACTNi/Ge/Au and Ni/Ge/Pd contacts have been made on 1018 cm-3 n-type GaAs. The contacts were subjected to ion beam mixing through the metallization using 70-130 keV Se+ ions and subsequently subjected to rapid thermal annealing (RTA). These are compared with unimplanted contacts produced by RTA techniques on the same substrate. The specific contact resistance ,pc, has been measured for the two systems. In addition, the contacts have been studied using Auger depth profiling and SEM studies have been used to determine surface morphology. Values of pc ∽ 10-6 -10-7 ohm-cm2 have been measured. It is observed that ion beam mixing or the addition of a Ti overlayer (to the Ni/Ge/Au) improves the contact morphology.

Evolution mechanisms of the surface morphology of grains in ZnO thin films grown on p-InP substrates due to thermal annealing

2008 ◽  
Vol 93 (2) ◽  
pp. 021904 ◽  
Author(s):  
J. M. Yuk ◽  
J. Y. Lee ◽  
Y. S. No ◽  
T. W. Kim ◽  
W. K. Choi
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Thermal Annealing ◽  
Zno Thin Films ◽  
Inp Substrates

The Role of Trapped Interstitials During Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
S. J. Pennycook ◽  
R. J. Culbertson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dopant Diffusion ◽  
Group V ◽  
Projected Range ◽  
The Mean ◽  
Detailed Nature ◽  
Ion Implanted

ABSTRACTDuring the rapid thermal annealing of ion implanted layers, trapped interstitials are responsible for transient enhanced dopant diffusion and the formation of a band of defects at the mean projected ion range. We describe the detailed nature and extent of these effects and show how they can be predicted in practice. We present a model which explains why trapping only occurs with group V implantation and describe double implantation experiments which confirm the model and show how the formation of projected range defects can be suppressed.

Optical Furnace Annealing

1984 ◽  
Vol 35 ◽  
Author(s):  
Neil J. Barrett ◽  
D.C. Bartle ◽  
A.G. Todd ◽  
J.D. Grange
Keyword(s):  
Surface Morphology ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Furnace Annealing ◽  
Temperature Cycles ◽  
Rapid Annealing

ABSTRACTThe rapid annealing of Be implanted GaAs has produced electrical activations of 70% for doses of 5 × 1014 cm−2 and hole profiles similar to the as implanted distribution. Si implanted GaAs has also been investigated using doses of 1 and 2 × 1014 cm−2 with sheet resistivities of 40 Ω/square after rapid thermal annealing. GaAs has been annealed with W-Si on the surface for the application of self aligned gate FET technology. Temperature cycles upto 850°C are required to activate the implanted dopant. Such cycles do not cause inter diffusion between the W-Si and GaAs or deterioration of the metallisation surface morphology.

Modeling Dopant Redistribution During Rapid Thermal Annealing

1986 ◽  
Vol 71 ◽  
Author(s):  
Archie Y.C. Chan
Keyword(s):  
Finite Difference ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Junction Depth ◽  
Impurity Profile ◽  
Annealing Cycle ◽  
Dopant Redistribution ◽  
Ion Implanted

AbstractThe diffusion of ion-implanted dopants in silicon during rapid thermal annealing is modeled using the finite difference method.The change in impurity profile for an initial Pearson IV boron implant is negligible(less than 1 % change in junction depth) when the peak annealing temperature(TP ) is less than 1050 °C and its duration is shorter than 20 seconds. The dopant redistribution becomes significant(greater than 25 % change in junction depth) when Tp is greater than 1200 °C and its duration is longer than 40 seconds.The heatup and cooldown portions of the transient annealing cycle are found to have little effect on dopant redistribution provided that their rates are higher than 120 °C per second.

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