scholarly journals Surface and Thin Film Magnetization of Isotropic and Anisotropic Heisenberg Ferromagnet at Low Temperatures

1998 ◽  
Vol 93 (5-6) ◽  
pp. 785-797
Author(s):  
P. Modrak
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Heisenberg Ferromagnet ◽  
Film Magnetization

“In-Situ Raman Spectroscopy of Electronic Processes in Fullerene Thin Films

2002 ◽  
Vol 725 ◽  
Author(s):  
S.B. Phelan ◽  
B.S. O'Connell ◽  
G. Farrell ◽  
G. Chambers ◽  
H.J. Byrne
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Low Temperatures ◽  
In Situ Raman Spectroscopy ◽  
State Reduction ◽  
In Situ Raman ◽  
Linear Behavior ◽  
Current Voltage ◽  
Solid State Reduction

AbstractThe current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

Integrated Magnetic Sensing of Electrostatically Actuated Thin-Film Microbridges

2002 ◽  
Vol 729 ◽  
Author(s):  
J. Gaspar ◽  
Haohua Li ◽  
P.P. Freitas ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Counter Electrode ◽  
Spin Valve ◽  
Metal Gate ◽  
Electrostatically Actuated ◽  
Glass Substrates ◽  
Hydrogenated Amorphous ◽  
Bridge Length ◽  
The Magnetic Field

AbstractBilayer microbridges of aluminum and hydrogenated amorphous silicon are fabricated using thin film technology and surface micromachining at low temperatures on glass substrates. The microstructure is electrostatically actuated by applying a voltage between the bridge and a metal gate counter electrode placed beneath it. The movement is measured with a precision close to 0.1 Å by sensing the magnetic field of a permanent magnet, deposited and patterned on top of the microbridge, with an integrated spin valve magnetic sensor. The deflection of the bridge is at the same time monitored using an optical setup. The deflection of the structures is studied as a function of the driving applied gate voltage and bridge length and experimental results are analyzed with an electromechanical model.

scholarly journals Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors

2020 ◽  
Vol 7 (9) ◽  
pp. 1822-1844 ◽  
Author(s):  
Nidhi Tiwari ◽  
Amoolya Nirmal ◽  
Mohit Rameshchandra Kulkarni ◽  
Rohit Abraham John ◽  
Nripan Mathews
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Performance ◽  
Metal Oxide Semiconductors ◽  
Oxide Semiconductors ◽  
Temperature Activation

The review highlights low temperature activation processes for high performance n-type metal oxide semiconductors for TFTs.

On the Green-function theory of the spin- Heisenberg ferromagnet

1968 ◽  
Vol 46 (9) ◽  
pp. 1021-1028 ◽  
Author(s):  
S. T. Dembinski
Keyword(s):  
Green Function ◽  
Curie Temperature ◽  
Low Temperatures ◽  
Random Phase Approximation ◽  
Function Theory ◽  
Random Phase ◽  
Exact Result ◽  
Heisenberg Ferromagnet ◽  
First Order ◽  
The Green Function

A new first-order decoupling scheme for the Green function appearing in the theory of the spin-[Formula: see text] Heisenberg ferromagnet is introduced. At low temperatures the magnetization has no spurious term in T3 and the coefficient of the term in T4 is within a few percent of the Dyson exact result. The Curie temperature is equal to the random phase approximation Curie temperature.

Electrical Conductions of High Mobility Poly-Si Thin Film Transistors at Low Temperatures

1994 ◽  
Vol 33 (Part 2, No. 3B) ◽  
pp. L409-L412 ◽  
Author(s):  
Tadashi Serikawa ◽  
Seiiti Shirai ◽  
Sadao Takaoka ◽  
Kazuo Murase ◽  
Shuichi Ishida
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Si Thin Film
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