Effects of space exposure on ion-beam-deposited silicon-carbide and boron-carbide coatings

1998 ◽  
Vol 37 (34) ◽  
pp. 8038 ◽  
Author(s):  
Ritva A. M. Keski-Kuha ◽  
Gerald M. Blumenstock ◽  
Charles M. Fleetwood ◽  
Dirk-Roger Schmitt
1997 ◽  
Vol 12 (9) ◽  
pp. 2485-2492 ◽  
Author(s):  
B. K. Daniels ◽  
D. W. Brown ◽  
F. M. Kimock

Protection of glass substrates by direct ion beam deposited diamond-like carbon (DLC) coatings was observed using a commercial pin-on-disk instrument at ambient conditions without lubrication. Ion beam sputter-deposited titanium carbide and boron carbide coatings reduced sliding friction, and provided tribological protection of silicon substrates, but the improvement factor was less than that found for DLC. Observations of unlubricated sliding of hemispherical glass pins at ambient conditions on uncoated glass and silicon substrates, and ion beam deposited coatings showed decreased wear in the order: uncoated glass > uncoated silicon > boron carbide > titanium carbide > DLC > uncoated sapphire. Failure mechanisms varied widely and are discussed. Generally, the amount of wear decreased as the sliding friction decreased, with the exception of uncoated sapphire substrates, for which the wear was low despite very high friction. There is clear evidence that DLC coatings continue to protect the underlying substrate long after the damage first penetrates through the coating. The test results correlate with field use data on commercial products which have shown that the DLC coatings provide substantial extension of the useful lifetime of glass and other substrates.


2020 ◽  
Vol 46 (3) ◽  
pp. 3074-3081 ◽  
Author(s):  
Xueqian Cao ◽  
Lunlin Shang ◽  
Yongmin Liang ◽  
Zhibin Lu ◽  
Guangan Zhang ◽  
...  

1994 ◽  
Vol 33 (25) ◽  
pp. 5962 ◽  
Author(s):  
G. M. Blumenstock ◽  
Ritva A. M. Keski-Kuha

2021 ◽  
pp. 106636
Author(s):  
Volkan Ugraskan ◽  
Birol Isik ◽  
Ozlem Yazici ◽  
Fatih Cakar

1991 ◽  
Vol 235 ◽  
Author(s):  
D. K. Sood ◽  
V. C. Nath ◽  
Yang Xi

ABSTRACTAmorphisation of sintered SiC by bombardment with self (C, Si) ions has been studied. Ion doses ranged from 1×1015 to 1×1017 ions/cm2; and ion energy was varied from 0.09 to 5 MeV. Amorphisation was detected by micro-focus Raman scattering. Tribomechanical properties-friction and wear were studied with a high precision pin (steel ball) and disc (implanted) machine. Results show substantial improvements in friction and wear, which persist to a large number of cycles. Tribomechanical properties are shown to correlate with surface amorphisation and carburisation. Carbon ions are found to be much more effective than Si ions (with similar damage distributions) in reducing friction and wear.


Author(s):  
P. Musumeci ◽  
L. Calcagno ◽  
A. Makhtari ◽  
P. Baeri ◽  
G. Compagnini ◽  
...  

JOM ◽  
2021 ◽  
Author(s):  
Alexander J. Leide ◽  
Richard I. Todd ◽  
David E. J. Armstrong

AbstractSilicon carbide is desirable for many nuclear applications, making it necessary to understand how it deforms after irradiation. Ion implantation combined with nanoindentation is commonly used to measure radiation-induced changes to mechanical properties; hardness and modulus can be calculated from load–displacement curves, and fracture toughness can be estimated from surface crack lengths. Further insight into indentation deformation and fracture is required to understand the observed changes to mechanical properties caused by irradiation. This paper investigates indentation deformation using high-resolution electron backscatter diffraction (HR-EBSD) and Raman spectroscopy. Significant differences exist after irradiation: fracture is suppressed by swelling-induced compressive residual stresses, and the plastically deformed region extends further from the indentation. During focused ion beam cross-sectioning, indentation cracks grow, and residual stresses are modified. The results clarify the mechanisms responsible for the modification of apparent hardness and apparent indentation toughness values caused by the compressive residual stresses in ion-implanted specimens.


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