Time-Resolved Photoluminescence Studies of AlGaN-based Deep UV LED Structures Emitting Down to 229 nm

2009 ◽  
Author(s):  
Gregory A. Garrett ◽  
Craig G. Moe ◽  
Meredith L. Reed ◽  
Michael Wraback ◽  
Wenhong Sun ◽  
...  
Keyword(s):  
Time Resolved ◽  
Uv Led ◽  
Deep Uv ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

PROGRESS IN HIGH EFFICIENCY UV LED RESEARCH FOR REAGENTLESS BIOAGENT DETECTION AND WATER PURIFICATION

2008 ◽  
Vol 18 (01) ◽  
pp. 179-185 ◽  
Author(s):  
MEREDITH L. REED ◽  
GREGORY A. GARRETT ◽  
ANAND V. SAMPATH ◽  
PAUL H. SHEN ◽  
CHARLES J. COLLINS ◽  
...  
Keyword(s):  
Water Purification ◽  
High Efficiency ◽  
Time Resolved ◽  
Current Time ◽  
Light Emitting ◽  
Uv Led ◽  
Photoluminescence Studies ◽  
Ultraviolet Light Emitting Diodes ◽  
Time Resolved Photoluminescence

We present material and device characterization of 280 nm semiconductor ultraviolet light emitting diodes. These devices exhibit low series resistance, wavelength stability with increasing current, and have a half-life in excess of 570hrs, depending upon the injection current. Time-resolved photoluminescence studies of these materials prior to fabrication have been correlated with the device performance. We also discuss the potential for use in water purification.

Time resolved photoluminescence studies of Zn–Se–Te nanostructures with sub-monolayer quantities of Te grown by molecular beam epitaxy

2004 ◽  
Vol 241 (3) ◽  
pp. 515-518 ◽  
Author(s):  
Y. Gu ◽  
Igor L. Kuskovsky ◽  
M. van der Voort ◽  
G. F. Neumark ◽  
X. Zhou ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence studies of stimulated emission and exciton dynamics in ZnSe/ZnS0.18Se0.82 superlattices

1994 ◽  
Vol 37 (4-6) ◽  
pp. 1133-1136
Author(s):  
C.J. Stevens ◽  
R.A. Taylor ◽  
J.F. Ryan ◽  
M. Dabbicco ◽  
M. Ferrara ◽  
...  
Keyword(s):  
Stimulated Emission ◽  
Time Resolved ◽  
Exciton Dynamics ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

UNDERSTANDING ULTRAVIOLET EMITTER PERFORMANCE USING INTENSITY DEPENDENT TIME-RESOLVED PHOTOLUMINESCENCE

2007 ◽  
Vol 17 (01) ◽  
pp. 179-188 ◽  
Author(s):  
MICHAEL WRABACK ◽  
GREGORY A. GARRETT ◽  
ANAND V. SAMPATH ◽  
PAUL H. SHEN
Keyword(s):  
Radiative Lifetime ◽  
Active Regions ◽  
Pump Intensity ◽  
Performance Comparison ◽  
Nonradiative Recombination ◽  
Extended Defects ◽  
Light Emitters ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence studies of nitride semiconductors and ultraviolet light emitters comprised of these materials are performed as a function of pump intensity as a means of understanding and evaluating device performance. Comparison of time-resolved photoluminescence (TRPL) on UV LED wafers prior to fabrication with subsequent device testing indicate that the best performance is attained from active regions that exhibit both reduced nonradiative recombination due to saturation of traps associated with point and extended defects and concomitant lowering of radiative lifetime with increasing carrier density. Similar behavior is observed in optically pumped UV lasers. Temperature and intensity dependent TRPL measurements on a new material, AlGaN containing nanoscale compositional inhomogeneities (NCI), show that it inherently combines inhibition of nonradiative recombination with reduction of radiative lifetime, providing a potentially higher efficiency UV emitter active region.

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