Application of heterojunction bipolar transistor integrated circuits in high speed lightwave systems

1990 ◽  
Author(s):  
PETER M. ASBECK ◽  
K. C. WANG ◽  
M. F. CHANG ◽  
G. J. SULLIVAN
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

HBT ICs FOR OC-192 EQUIPMENT

1998 ◽  
Vol 09 (02) ◽  
pp. 549-566
Author(s):  
JOHN SITCH ◽  
ROBERT SURRIDGE
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
New Technology ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Small Scale ◽  
Commercial Market ◽  
Fiber Communications

Heterojunction bipolar transistor (HBT) integrated circuits are just beginning to appear on the commercial market, mostly as small-scale microwave and broadband parts. The high-speed portion of Nortel's OC-192 fiber communications product makes extensive use of this new technology, and this article describes the rationale for using HBT ICs in such a system, and the philosophy behind HBT IC introduction.

BALLISTIC COLLECTION TRANSISTORS AND THEIR APPLICATIONS

1994 ◽  
Vol 05 (03) ◽  
pp. 349-379 ◽  
Author(s):  
T. ISHIBASHI ◽  
Y. YAMAUCHI ◽  
E. SANO ◽  
H. NAKAJIMA ◽  
Y. MATSUOKA
Keyword(s):  
Integrated Circuits ◽  
High Speed ◽  
Monte Carlo Analysis ◽  
Heterojunction Bipolar Transistor ◽  
Doping Profile ◽  
Electron Velocity ◽  
Collector Current ◽  
Microwave Characterization ◽  
Current Densities ◽  
Dynamic Frequency

We describe the design, fabrication and application of ballistic collection transistors (BCTs) in which electron velocity overshoot is introduced in the collector of a GaAs-based heterojunction bipolar transistor. The guideline for the BCT design is the effective confinement of electrons to the Γ-valley, as simulated by Monte Carlo analysis, and the control of electron energy is accomplished basically with an i-p+-n+ doping profile. Microwave characterization demonstrates the existence of significant overshoot and cutoff frequencies higher than 100 GHz at collector current densities in the mid 104 A/cm 2 range for a typical BCT structure. Some high speed integrated circuits implemented with BCTs include a selector circuit that operates at bit rates up to 40 Gb/s, a dynamic frequency divider with divide-by-four function up to 50 GHz and a broadband preamplifier having an S21 bandwidth as high as 40 GHz.

HIGH SPEED DIGITAL CIRCUIT TECHNOLOGY

1995 ◽  
Vol 06 (01) ◽  
pp. 163-210 ◽  
Author(s):  
STEPHEN I. LONG
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Material Properties ◽  
High Speed ◽  
Digital Circuit ◽  
Bipolar Transistor ◽  
Clock Frequency ◽  
Digital Integrated Circuits ◽  
Heterojunction Devices ◽  
Circuit Technology

The performance of high speed digital integrated circuits, defined here as those requiring operation at high clock frequency, is generally more sensitive to material properties and process techniques than ICs used at lower frequencies. Obtaining high speed and low power concurrently is especially challenging. Circuit architectures must be selected for the device and application appropriately. This paper presents simple models for high speed digital IC performance and applies these to the FET and bipolar transistor. Heterojunction devices are compared with those using single or binary materials. Circuits for high speed SSI and low power VLSI applications are described, and their performance is surveyed.

High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers

1996 ◽  
Vol 25 (10) ◽  
pp. 1637-1639
Author(s):  
M. T. Fresina ◽  
D. A. Ahmaki ◽  
S. Thomas ◽  
D. W. Barlage ◽  
C. A. Martino ◽  
...  
Keyword(s):  
High Speed ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor
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