Heterojunction bipolar transistor-based long-wavelength optoelectronic integrated circuits

Author(s):  
S. Chandrasekhar
1998 ◽  
Vol 09 (02) ◽  
pp. 549-566
Author(s):  
JOHN SITCH ◽  
ROBERT SURRIDGE

Heterojunction bipolar transistor (HBT) integrated circuits are just beginning to appear on the commercial market, mostly as small-scale microwave and broadband parts. The high-speed portion of Nortel's OC-192 fiber communications product makes extensive use of this new technology, and this article describes the rationale for using HBT ICs in such a system, and the philosophy behind HBT IC introduction.


1988 ◽  
Vol 144 ◽  
Author(s):  
Han-Tzong Yuan

ABSTRACTThe status and progress of AlGaAs/GaAs heterojunction bipolar transistor integrated circuits are reviewed. The challenge of fabricating large-scale integrated circuits using heterojunction bipolar transistors is discussed. Specifically, the issues related to low defect epitaxial materials, localized impurity doping techniques, simple and reliable ohmic contacts, and multilevel interconnects are examined.


1994 ◽  
Vol 05 (01) ◽  
pp. 45-65 ◽  
Author(s):  
S. CHANDRASEKHAR

Long wavelength optoelectronic integrated circuits have made impressive progress in the last decade and their performance has become attractive enough to be considered as part of lightwave communication systems. This paper reviews these aspects of OEICs, with emphasis on monolithic photoreceivers which incorporate heterojunction bipolar transistors for electronic functions. We cover applications covering both direct detection as well as coherent detection, discuss implementation methodologies, compare performances with hybrid receivers, briefly look into noise issues, and speculate on future directions.


Sign in / Sign up

Export Citation Format

Share Document