THE PROGRESS AND PERFORMANCE OF LONG WAVELENGTH OEIC PHOTORECEIVERS INCORPORATING HETEROJUNCTION BIPOLAR TRANSISTORS

Long wavelength optoelectronic integrated circuits have made impressive progress in the last decade and their performance has become attractive enough to be considered as part of lightwave communication systems. This paper reviews these aspects of OEICs, with emphasis on monolithic photoreceivers which incorporate heterojunction bipolar transistors for electronic functions. We cover applications covering both direct detection as well as coherent detection, discuss implementation methodologies, compare performances with hybrid receivers, briefly look into noise issues, and speculate on future directions.

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InGaAsP/InP long wavelength optoelectronic integrated circuits (OEIC's) for high-speed optical fiber communication systems

Journal of Lightwave Technology ◽

10.1109/jlt.1987.1075439 ◽

1987 ◽

Vol 5 (10) ◽

pp. 1479-1487 ◽

Cited By ~ 26

Author(s):

A. Suzuki ◽

K. Kasahara ◽

M. Shikada

Keyword(s):

Integrated Circuits ◽

Optical Fiber ◽

Communication Systems ◽

High Speed ◽

Optical Fiber Communication ◽

Fiber Communication ◽

Long Wavelength ◽

Optoelectronic Integrated Circuits

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THE PROGRESS AND PERFORMANCE OF LONG WAVELENGTH OEIC PHOTORECEIVERS INCORPORATING HETEROJUNCTION BIPOLAR TRANSISTORS

Selected Topics in Electronics and Systems - Current Trends in Integrated Optoelectronics ◽

10.1142/9789814354004_0002 ◽

1994 ◽

pp. 45-65 ◽

Cited By ~ 1

Author(s):

S. CHANDRASEKHAR

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Long Wavelength ◽

And Performance

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TEM study of phosphorus-implanted pseudomorphic Si0.88Ge0.12 on Si(100)

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138713 ◽

1995 ◽

Vol 53 ◽

pp. 468-469

Author(s):

N. David Theodore ◽

Donald Y.C Lie ◽

J. H. Song ◽

Peter Crozier

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Integrated Circuit ◽

High Speed ◽

Room Temperature ◽

Strain Relaxation ◽

Bipolar Transistors ◽

Sige Hbt ◽

Integrated Circuit Manufacturing ◽

Microstructural Behavior

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. The material offers adjustable bandgaps, improved carrier mobilities over Si homostructures, and compatibility with Si-based integrated-circuit manufacturing. SiGe HBT performance can be improved by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however is that implantation can enhance strain-relaxation of SiGe/Si.Furthermore, once misfit or threading dislocations result, the defects can give rise to recombination-generation in depletion regions of semiconductor devices. It is of relevance therefore to study the damage and anneal behavior of implanted SiGe layers. The present study investigates the microstructural behavior of phosphorus implanted pseudomorphic metastable Si0.88Ge0.12 films on silicon, exposed to various anneals.Metastable pseudomorphic Si0.88Ge0.12 films were grown ~265 nm thick on a silicon wafer by molecular-beam epitaxy. Pieces of this wafer were then implanted at room temperature with 100 keV phosphorus ions to a dose of 1.5×1015 cm-2.

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Ultra high frequency integrated circuits using transferred substrate heterojunction bipolar transistors

ISCAS'99. Proceedings of the 1999 IEEE International Symposium on Circuits and Systems VLSI (Cat. No.99CH36349) ◽

10.1109/iscas.1999.780789 ◽

2003 ◽

Author(s):

M. Rodwell ◽

Q. Lee ◽

D. Mensa ◽

J. Guthrie ◽

Y. Betser ◽

...

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

High Frequency ◽

Bipolar Transistors ◽

Ultra High Frequency

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Modeling of Ge-Si heterojunction bipolar transistors for use in silicon monolithic millimeter-wave integrated circuits

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.44120 ◽

1989 ◽

Vol 37 (12) ◽

pp. 2046-2050 ◽

Cited By ~ 3

Author(s):

S.A. Campbell ◽

A. Gopinath

Keyword(s):

Integrated Circuits ◽

Millimeter Wave ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Millimeter Wave Integrated Circuits

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Heterojunction bipolar transistor-based long-wavelength optoelectronic integrated circuits

Optical Fiber Communication ◽

10.1364/ofc.1991.tub3 ◽

1991 ◽

Cited By ~ 1

Author(s):

S. Chandrasekhar

Keyword(s):

Integrated Circuits ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Long Wavelength ◽

Optoelectronic Integrated Circuits

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VA-5 InGaAs/InP heterojunction bipolar transistors for digital integrated circuits

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1984.21874 ◽

1984 ◽

Vol 31 (12) ◽

pp. 1980-1980

Author(s):

A.N.M. Masum Choudhury ◽

K. Tabatabaie-Alavi ◽

J.C. Vlcek ◽

H. Kanbe ◽

C.G. Fonstad

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Digital Integrated Circuits

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III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156490000137 ◽

1990 ◽

Vol 01 (03n04) ◽

pp. 245-301 ◽

Cited By ~ 18

Author(s):

M.F. CHANG ◽

P.M. ASBECK

Keyword(s):

Integrated Circuits ◽

Heterojunction Bipolar Transistors ◽

High Speed ◽

High Performance ◽

Growth Parameters ◽

Bipolar Transistors ◽

System Requirements ◽

Potential Impact ◽

Computational Systems ◽

Very High

Recent advances in communication, radar and computational systems demand very high performance electronic circuits. Heterojunction bipolar transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. This paper reviews the present status of GaAs and InP-based HBT technologies and their applications to digital, analog, microwave and multifunction circuits. It begins with a brief review of HBT device concepts and critical epitaxial growth parameters. Issues important for device modeling and fabrication technologies are discussed. The paper then highlights the performance and the potential impact of HBT devices and integrated circuits in various application areas. Key prospects for future HBT development are also addressed.

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