scholarly journals Silicon nitride waveguide as a power delivery component for on-chip dielectric laser accelerators

2019 ◽  
Vol 44 (2) ◽  
pp. 335 ◽  
Author(s):  
Si Tan ◽  
Zhexin Zhao ◽  
Karel Urbanek ◽  
Tyler Hughes ◽  
Yun Jo Lee ◽  
...  
Author(s):  
Zhexin Zhao ◽  
Si Tan ◽  
Karel Urbanek ◽  
Tyler Hughes ◽  
Yun Jo Lee ◽  
...  

2018 ◽  
Vol 9 (5) ◽  
Author(s):  
Tyler W. Hughes ◽  
Si Tan ◽  
Zhexin Zhao ◽  
Neil V. Sapra ◽  
Kenneth J. Leedle ◽  
...  

2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.


Author(s):  
Yuchen Wang ◽  
Vincent Pelgrin ◽  
Samuel Gyger ◽  
Christian Lafforgue ◽  
Val Zwiller ◽  
...  

2017 ◽  
Vol 25 (9) ◽  
pp. 2538-2551 ◽  
Author(s):  
Divya Pathak ◽  
Houman Homayoun ◽  
Ioannis Savidis

2021 ◽  
Author(s):  
Artur Hermans ◽  
Kasper Van Gasse ◽  
Jon Ø. Kjellman ◽  
Charles Caër ◽  
Tasuku Nakamura ◽  
...  

2010 ◽  
Vol 2010 (1) ◽  
pp. 000392-000399
Author(s):  
Timothy Budell ◽  
Eric Tremble

A method for determining adequate quantities and locations of on-chip capacitors to maintain supply voltages at all locations on a chip within pre-specified limits given the switching activity of on-chip circuits was presented in [3]. In this paper, we extend the method to include current flow from the package and PCB. The effects of on-chip capacitance and other system parasitics on the time it takes for additional supply current to flow into a chip are discussed. The relationship between switching current, capacitance, system parasitic inductances, and on-chip noise is presented. These concepts are then applied to the subject of power delivery network (PDN) resonance. A 1-dimensional model for simulating PDN resonance is presented. The model includes chip, package, and PCB components, along with explicit networks for each chip power supply and their interactions. The topology of the model and the contributions of each model component are described. A design methodology for avoiding PDN resonance, presently in use on all IBM ASIC modules, is presented.


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