Parametric excitation of silicon-on-insulator microcantilever beams by fringing fields probed with laser Doppler vibrometery

2013 ◽  
Author(s):  
Yoav Linzon ◽  
Said Mahajna ◽  
Bojan Ilic ◽  
Slava Krylov
Keyword(s):  
Parametric Excitation ◽  
Silicon On Insulator ◽  
Laser Doppler ◽  
Fringing Fields

Parametric Excitation of Flexural Vibrations of Micro Beams by Fringing Electrostatic Fields

2010 ◽  
Author(s):  
Slava Krylov ◽  
Nicola Molinazzi ◽  
Tsvi Shmilovich ◽  
Uri Pomerantz ◽  
Stella Lulinsky
Keyword(s):  
Electric Fields ◽  
Parametric Excitation ◽  
Electrostatic Force ◽  
Nonlinear Differential Equations ◽  
Three Dimensional ◽  
Ambient Air ◽  
Silicon On Insulator ◽  
Suggested Approach ◽  
Base Functions ◽  
Fringing Fields

We report on an approach for efficient excitation of large amplitude flexural out-of-plane vibrations of micro beams and present results of theoretical and experimental feasibility study of the suggested principle. An actuating electrode is located symmetrically at the two sides of the beam and is fabricated from the same layer of the wafer. The electrostatic force is engendered by the asymmetry of the fringing fields in the deformed state and acts in the direction opposite to the deflection therefore increasing the effective stiffness of the system. The time-varying voltage applied to the electrode results in the modulation of this electrostatic stiffness and consequently in the parametric excitation of the structure. The device may exhibit large vibrational amplitudes not limited by the pull-in instability common in close-gap actuators. In contrast to previously reported devices excited by the fringing fields, the force considered here is of distributed character. The reduced order model was built using the Galerkin decomposition with linear modes as base functions and the resulting system of nonlinear differential equations was solved numerically. The electrostatic forces were approximated by means of fitting the results of three-dimensional numerical solution for the electric fields. The devices fabricated from a silicon on insulator (SOI) substrate using deep reactive ion etching (DRIE) based process were operated in ambient air conditions and the responses were registered by means of Laser Doppler Vibrometry. The experimental resonant curves were consistent with those predicted by the model. Theoretical and preliminary experimental results illustrated the feasibility of the suggested approach.

Large Angle Parametrically Excited Tilting Micro Actuator

2008 ◽  
Author(s):  
Assaf Ya’akobovitz ◽  
Slava Krylov
Keyword(s):  
Parametric Excitation ◽  
Inertial Sensors ◽  
Actuation Voltage ◽  
Large Angle ◽  
Three Dimensional ◽  
Single Layer ◽  
Silicon On Insulator ◽  
Performance Study ◽  
Operational Parameters ◽  
Lumped Model

We present novel operational principle of a tilting MEMS device based on parametric excitation and linear to angular motion transformation. The device is fabricated using a single layer of silicon on insulator (SOI) wafer and combines simple fabrication process with several beneficial features including large tilting angles, wide bandwidth, low sensitivity to deviation in geometrical and operational parameters and low actuation voltage. A theoretical feasibility and performance study was carried out using a lumped model of the device and verified by a coupled three-dimensional simulation. Parametric excitation of the tilting motion was demonstrated experimentally using and external piezoelectric transducer and tilting angles of 39° were registered. The suggested operational approach could be efficiently implemented in many MEMS based applications incorporating tilting elements including micromirrors, bio medical devices and inertial sensors.

Efficient parametric excitation of silicon-on-insulator microcantilever beams by fringing electrostatic fields

2013 ◽  
Vol 113 (16) ◽  
pp. 163508 ◽  
Author(s):  
Yoav Linzon ◽  
Bojan Ilic ◽  
Stella Lulinsky ◽  
Slava Krylov
Keyword(s):  
Parametric Excitation ◽  
Silicon On Insulator ◽  
Electrostatic Fields

scholarly journals Heterodyne laser Doppler vibrometers integrated on silicon-on-insulator based on serrodyne thermo-optic frequency shifters

2013 ◽  
Vol 52 (10) ◽  
pp. 2145 ◽  
Author(s):  
Yanlu Li ◽  
Steven Verstuyft ◽  
Gunay Yurtsever ◽  
Shahram Keyvaninia ◽  
Gunther Roelkens ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Laser Doppler

scholarly journals A Study on Parametric Amplification in a Piezoelectric MEMS Device

Micromachines ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 19 ◽  
Author(s):  
Miguel Gonzalez ◽  
Yoonseok Lee
Keyword(s):  
Quality Factor ◽  
Parametric Excitation ◽  
Fold Increase ◽  
Plane Motion ◽  
Silicon On Insulator ◽  
Atmospheric Conditions ◽  
Concentrated Mass ◽  
Micro Electro Mechanical Systems ◽  
Out Of Plane ◽  
Quality Factor Q

In various applications, damping from the surrounding fluid severely degrades the performance of micro-electro-mechanical systems (MEMS). In this paper, mechanical amplification through parametric resonance was investigated in a piezoelectrically actuated MEMS to overcome the effects of damping. The device was fabricated using the PiezoMUMPS process, which is based on a Silicon-on-Insulator (SOI) process with an additional aluminum nitride (AlN) layer. Here, a double-clamped cantilever beam with a concentrated mass at the center was excited at its first resonance mode (out-of-plane motion) in air and at atmospheric conditions. A parametric signal modulating the stiffness of the beam was added at twice the frequency of the excitation signal, which was swept through the resonance frequency of the mode. The displacement at the center of the device was detected optically. A four-fold increase in the quality-factor, Q, of the resonator was obtained at the highest values in amplitude used for the parametric excitation. The spring modulation constant was obtained from the effective quality-factor, Q e f f , versus parametric excitation voltage curve. This study demonstrates that through these methods, significant improvements in performance of MEMS in fluids can be obtained, even for devices fabricated using standard commercial processes.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

Trial production of γ-type energy filtering TEM

1995 ◽  
Vol 53 ◽  
pp. 604-605
Author(s):  
Y. Taniguchi ◽  
E. Nakazawa ◽  
S. Taya
Keyword(s):  
Magnetic Energy ◽  
Electron Optics ◽  
Electron Microscopic ◽  
Mass Spectrometers ◽  
Ion Optics ◽  
Energy Filtering ◽  
New Information ◽  
New Type ◽  
Fringing Fields

Imaging energy filters can add new information to electron microscopic images with respect to energy-axis, so-called electron spectroscopic imaging (ESI). Recently, many good results have been reported using this imaging technique. ESI also allows high-contrast observation of unstained biological samples, becoming a trend of the field of morphology. We manufactured a new type of energy filter as a trial production. This energy filter consists of two magnets, and we call γ-filter since the trajectory of electrons shows ‘γ’-shape inside the filter. We evaluated the new energyγ-filter TEM with the γ-filter.Figure 1 shows schematic view of the electron optics of the γ-type energy filter. For the determination of the electron-optics of the γ-type energy filter, we used the TRIO (Third Order Ion Optics) program which has been developed for the design of high resolution mass spectrometers. The TRIO takes the extended fringing fields (EFF) into consideration. EFF makes it difficult to design magnetic energy filters with magnetic sector fields.

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