Observation of Atom and Ion Clouds Produced from Single Droplets of Sample in Inductively Coupled Plasmas by Optical Emission and Laser-Induced Fluorescence Imaging

1997 ◽  
Vol 51 (5) ◽  
pp. 607-616 ◽  
Author(s):  
John W. Olesik ◽  
Jeffery A. Kinzer ◽  
Garrett J. McGowan
Keyword(s):  
Inductively Coupled Plasma ◽  
Optical Emission ◽  
Laser Induced Fluorescence ◽  
Inductively Coupled Plasmas ◽  
Double Exposure ◽  
Charge Coupled Device ◽  
Inductively Coupled ◽  
Intensified Charge Coupled Device ◽  
Coupled Plasmas ◽  
Single Droplets

An instrument to obtain optical emission and laser-induced fluorescence images of atom or ion clouds, each produced from isolated, monodisperse droplets of sample in an inductively coupled plasma, is described. An excimer laser pumped dye laser is used to produce a large (28-mm × 24-mm) beam for saturated fluorescence from atoms or ions throughout a large portion of the ICP. An intensified charge-coupled device (ICCD) detects optical emission or laser induced fluorescence snapshot images at the focal plane of an aberration-corrected slitless spectrograph. Images produced from a single laser pulse can be detected. Double-exposure emission images with 1-μs gate times can be acquired to monitor the movement of atom or ion clouds produced from a single droplet of sample solution. Variations in the number of atoms or ions produced as a function of time (or height) in the plasma can be monitored. Excitation in the plasma can be assessed from ratios of emission to fluorescence intensities.

A comparative study of Cx(x = 4, 5, 7)F8 plasmas for dry etch processing

2020 ◽  
Vol 10 (6) ◽  
pp. 903-908
Author(s):  
Da In Sung ◽  
Hyun Woo Tak ◽  
Dong Woo Kim ◽  
Geun Young Yeom
Keyword(s):  
Photoelectron Spectroscopy ◽  
Optical Emission ◽  
Carbon Layer ◽  
Environmentally Benign ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
System A ◽  
Coupled Plasmas ◽  
Low Global Warming Potential ◽  
Dry Etch

In this study, the SiO2 etch characteristics of perfluorocarbon such as C4F8, C5F8, and C7F8 were investigated using inductively coupled plasmas (ICPs) to study the effect of a high C/F ratio on the etch characteristics of SiO2 for the ICP. The SiO2 rates and etch selectivities over Si3N4 and amorphous carbon layer (ACL) were measured by using the mixtures of Cx(x = 4, 5, 7)F8/Ar/O2. The higher C/F ratio of perfluorocarbon showed lower SiO2 etch rate but exhibited higher etch selectivities over Si3N4 and ACL due to the higher C2 while keeping the similar F in the plasma as observed by optical emission spectroscopy and due to the thicker fluorocarbon layer with more carbon-rich fluorocarbon on the materials surface as observed by X-ray photoelectron spectroscopy. Especially, C7F8 is environmentally benign material because it not only has a relatively low global warming potential but also can be captured easily using a capture system (a liquid state at the room temperature). Therefore, C7F8 could be applicable as one of the next generation perfluorocarbon etching materials.

Mass Spectrometric Evidence for Suprathermal Ionization in an Inductively Coupled Argon Plasma

1981 ◽  
Vol 35 (4) ◽  
pp. 380-384 ◽  
Author(s):  
Robert S. Houk ◽  
Harry J. Svec ◽  
Velmer A. Fassel
Keyword(s):  
Inductively Coupled Plasma ◽  
Argon Plasma ◽  
Vacuum System ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
Optical Spectrometry ◽  
Mass Spectrometric Evidence ◽  
Singly Charged ◽  
Coupled Plasmas ◽  
Charged Ions

Mass spectra have been obtained of species in the axial channel of an inductively coupled argon plasma by extracting ions from the inductively coupled plasma into a vacuum system housing a quadrupole mass spectrometer. Ionization temperatures ( Tion) are obtained from relative count rates of m/z-resolved ions according to two general types of ionization equilibrium considerations: (a) the ratio of doubly/singly charged ions of the same element, and (b) the ratio of singly charged ions from two elements of different ionization energy. The Tion values derived from measurement of Ar+2/Ar+, Ba+2/Ba+, Sr+2/Sr+, and Cd+/I+ are all greater than those expected from excitation temperatures measured by other workers. The latter three values for Tion are in reasonable agreement with values obtained by optical spectrometry for a variety of argon inductively coupled plasmas.

The electronic identity of inductive and capacitive plasmas

2008 ◽  
Vol 74 (2) ◽  
pp. 155-161 ◽  
Author(s):  
K. T. A. L. BURM
Keyword(s):  
Inductively Coupled Plasma ◽  
Optimal Operation ◽  
Identity Relation ◽  
Inductively Coupled Plasmas ◽  
Plasma Sources ◽  
Capacitively Coupled ◽  
Inductively Coupled ◽  
Capacitively Coupled Plasma ◽  
Coupled Plasmas ◽  
Operation Frequency

AbstractAn electronic identity relation, relating capacitively coupled plasma sources to corresponding inductively coupled plasma sources, has been derived, starting from the Maxwell relations for matter and the characteristics of a capacitor and of an inductor. Furthermore, the breakdown conditions for both capacitively coupled plasmas and for inductively coupled plasmas as well as their optimal operation frequency ranges are discussed.

scholarly journals Inductively Coupled Plasma Etching of III-Nitrides in Cl2/Xe, Cl2/Ar and Cl2/He

1999 ◽  
Vol 4 (S1) ◽  
pp. 763-768
Author(s):  
Hyun Cho ◽  
Y.B. Hahn ◽  
D.C. Hays ◽  
K.B. Jung ◽  
S.M. Donovan ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasmas ◽  
Source Power ◽  
Strong Function ◽  
Inductively Coupled ◽  
Physical Sputtering ◽  
Etch Rates ◽  
Coupled Plasmas ◽  
Nitrogen Bond

The role of additive noble gases He, Ar and Xe to Cl2-based Inductively Coupled Plasmas for etching of GaN, AlN and InN were examined. The etch rates were a strong function of chlorine concentration, rf chuck power and ICP source power. The highest etch rates for InN were obtained with Cl2/Xe, while the highest rates for AlN and GaN were obtained with Cl2/He. Efficient breaking of the III-nitrogen bond is crucial for attaining high etch rates. The InN etching was dominated by physical sputtering, in contrast to GaN and AlN. In the latter cases, the etch rates were limited by initial breaking of the III-nitrogen bond. Maximum selectivities of ∼ 80 for InN to GaN and InN to AlN were obtained.

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